Masakatsu Maeda

Nucleation and growth of Ti3SiC2on SiC by interfacial reaction

In this study, we investigated the nucleation and growth of TE3SiC2 by an interfacial reaction between a SiC substrate and a Ti/Al bilayered film at various temperatures. The specimens were prepared by depositing Ti/Al on a 4H-SiC substrate and subsequently annealing the substrate in a vacuum. The interfacial structures were analyzed by X-ray diffraction analysis and transmission electron microscopy. Ti3SiC2 nucleated even when annealed at a low temperature of 973 K. The Ti3SiC2 grains formed at 973 K were isolated and nonepitaxial with respect to the SiC substrate. By increasing the annealing temperature to 1273 K, the Ti3SiC2 grains became epitaxial with the SiC substrate, spreading preferentially on it, and coalesced with each other, forming a layer without grain boundaries.