Masakazu Nanba

50×50μm pixel magnetic focus field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target

A 50×50μm pixel field emitter array image sensor with a highly sensitive avalanche-mode photoconductive target and a scanning electron focusing system consisting of permanent magnets were fabricated and tested as a step toward the development of ultrahigh-sensitivity compact image sensors for high-definition television cameras. The experimental results revealed that the magnetic focusing conditions of the prototype sensor were in accordance with those estimated from the simulation, and the prototype sensor could obtain both enough resolution for its pixel size and high sensitivity by focusing the electrons emitted from the field emitter array onto the highly sensitive photoconductive target.

640×480 pixel active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target

A 640×480 pixel field emitter array (FEA) image sensor with a high-gain avalanche rushing amorphous photoconductor (HARP) target was fabricated and tested as a step toward the development of ultrahigh-sensitivity compact image sensors for high-definition television cameras. For this sensor, an active-matrix Spindt-type FEA integrated with scanning circuits and a magnetic electron focusing system were designed, and a 15-μm-thick-HARP target was used. The experimental results revealed that the prototype sensor had enough resolution for its pixel number and high sensitivity due to the electrons emitted from the active-matrix FEA being focused onto the HARP target.

Fabrication of active-matrix high-efficiency electron emission device and its application to high-sensitivity image sensing

Practical advantages of an advanced high-efficiency electron emission device (HEED) (low-voltage operation, relatively simple structure, and availability for large-area applications) are further confirmed by its compatibility with active-matrix drive configuration. The fabricated HEED array has been applied to a high-sensitivity image sensing tube with a target of high-gain avalanche rushing amorphous photoconductor (HARP). It is demonstrated that a prototype 256×192pixel active-matrix HEED array operates well as an effective probe for high-resolution image pickup in combination with a HARP target. The advanced HEED array is promising for development of next-generation image sensor with ultrahigh sensitivity and high definition.

Electrostatic focusing Spindt-type field emitter array for an image sensor with a high-gain avalanche rushing amorphous photoconductor target

A new electrostatic focusing Spindt-type field emitter array (FEA) was simulated and fabricated to develop a compact FEA image sensor with a high-gain avalanche rushing amorphous photoconductor target. Although the conventional double-gated FEAs can generate focused electron beams by applying a lower voltage to the focusing electrode (second gate) than that of the gate electrode, the emission current drastically decreases. These experimental results show that by increasing the thickness of the gate electrode the emission current can be improved without deterioration of the focusing characteristics.

256×192 pixel field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target

A 256×192 pixel field emitter array (FEA) image sensor with a highly sensitive high-gain avalanche rushing amorphous photoconductor (HARP) target was fabricated and tested as a step toward the development of a practical image sensor for ultrahigh sensitivity and ultrahigh-definition compact TV cameras. The experimental results showed that the prototype had an adequate resolution corresponding to the spot size of the scanning electrons on the HARP target which was estimated by the simulation. The prototype also had a wide dynamic range and high sensitivity, demonstrating its potential as a next generation practical image sensor and offering new application of FEAs.

Development of a super-high-sensitivity image sensor using 640×480 pixel active-matrix high-efficiency electron emission device

An extremely high-sensitivity image sensor has been developed with a combination of an active-matrix high-efficiency electron emission device (HEED) array and a high-gain avalanche rushing amorphous photoconductor (HARP) target. Following the description of the requirements for the use of the electron emitter as an image-sensing probe, the characteristics of a fabricated 640×480 pixel active-matrix HEED image sensor with a HARP target are presented by image-pickup experiments under a dark condition. The emission current density of the experimental HEED under an active-matrix drive was 4 A/cm2 corresponding to a practical level. A clear image observed in the prototype compact camera demonstrates that the surface-emitting HEED is useful for image sensing based on HARP with high sensitivity and sufficient definition.

2∕3in. ultrahigh-sensitivity image sensor with active-matrix high-efficiency electron emission device

A 640×480pixel image sensor has been developed for low light imaging with a practical resolution. This image sensor combined an active-matrix high-efficiency electron emission device (HEED) with a high-gain avalanche rushing amorphous photoconductor (HARP) target. To meet the requirement for a scaling of the imaging size, we developed a 2∕3in. image sensor based on an active-matrix HEED with 13.75×13.75μm2pixels. The highly emissive property of 3.8μA∕pixel was comparable to that obtained previously from a 1in. device. The possible effect of the pixel size scaling on the image-pickup sensitivity was compensated by a significant increase in the emission current density. The technological potential of the HEED-HARP image sensing has been further enhanced toward practical use.

Active-matrix Spindt-type field emitter array with faster response time for image sensor with high-gain avalanche rushing amorphous photoconductor target

A new active-matrix Spindt-type field emitter array for a FEA-HARP (field emitter array - high-gain avalanche rushing amorphous photoconductor) image sensor was designed. Simulation and experimental results showed that the new active-matrix drive circuit can shorten the response time and can potentially meet the HDTV standard.

Enhanced output current density of an active-matrix high-efficiency electron emission device array with 13.75μmpixels

An active-matrix array of high-efficiency electron emission device (HEED) with a sufficient output density has been developed for the use as imaging probe in a high-gain avalanche rushing amorphous photoconductor target. Previously, it was demonstrated that a prototyped image sensor with 20×20μm2pixels could pick up a high definition image with an ultrahigh sensitivity under low-light-level condition. Based on it, an efficient active-matrix HEED with 13.75×13.75μm2pixels is fabricated for pursuing higher sensitivity and resolution. The improvement in the device isolation method enables to enlarge the relative emitting area, and then the emission current density per pixel reaches 3.6A∕cm2 that is about four times of that obtained from the previous one. The active-matrix HEED array with small pixels is available for application to the compact ultrahigh-sensitivity image sensor without affecting on the image definition.An active-matrix array of high-efficiency electron emission device (HEED) with a sufficient output density has been developed for the use as imaging probe in a high-gain avalanche rushing amorphous photoconductor target. Previously, it was demonstrated that a prototyped image sensor with 20×20μm2pixels could pick up a high definition image with an ultrahigh sensitivity under low-light-level condition. Based on it, an efficient active-matrix HEED with 13.75×13.75μm2pixels is fabricated for pursuing higher sensitivity and resolution. The improvement in the device isolation method enables to enlarge the relative emitting area, and then the emission current density per pixel reaches 3.6A∕cm2 that is about four times of that obtained from the previous one. The active-matrix HEED array with small pixels is available for application to the compact ultrahigh-sensitivity image sensor without affecting on the image definition.

Development of a high-resolution active-matrix electron emitter array for application to high-sensitivity image sensing

An active-matrix planar-type cold electron emitter array for application to high-sensitivity image sensors have been developed. A 640times480 pixel active-matrix HEED (high-efficiency electron emission device) with 20times20 mum pixels was fabricated, and the emission current density of 1 A/cm2 has been obtained at an applied voltage of 23 V. Further studies toward the next generation image sensor with a high sensitivity are in progress