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Featured researches published by Masakazu Tanahashi.


Japanese Journal of Applied Physics | 1997

The Sb2O3 Addition Effect on Sintering ZnO and ZnO+Bi2O3

Masahiro Ito; Masakazu Tanahashi; Miho Uehara; Atsushi Iga

The effects of adding minute quantities of Sb2O3 when sintering ZnO and ZnO+Bi2O3 (0.5 mol%) were studied. To prevent non-uniform distribution of the additive, dilute solutions of Sb-salts were used instead of solid Sb2O3. Very small quantity additions of Sb2O3 retarded sintering of both ZnO and ZnO+Bi2O3 (0.5 mol%). The sintering retarding effect, however, is lost when a powder mixture composed of Bi2O3+Sb2O3 is heat-treated to have these additives reacted with each other before they are added to the ZnO matrix.


Japanese Journal of Applied Physics | 1997

Effect of Al-doping on the Grain Growth of ZnO

Masakazu Tanahashi; Masahiro Ito; Masako Murao; Atsushi Iga

Grain growth of ZnO in liquid phase sintering of ZnO–0.5 mol%Bi2O3 ceramics has been studied by increasing the doping amount of Al2O3 from 25 ppm to 200 ppm. Al2O3 was doped using an aluminum nitrate aqueous solution. When 50 ppm of Al2O3 was doped to ZnO ceramics, abnormal grain growth was observed, while 75 ppm Al2O3 retarded grain growth. Doping of Al2O3 to pure ZnO ceramics did not cause abnormal grain growth,but simply retarded grain growth . The ratio of diameters of these grain sizes sintered at 900° C: d (abnormal grain growth)/d(retarded grain growth) is 20–100. Mechanisms of abnormal grain growth and retardation are proposed as follows. When the doped amount of Al2O3 was 50 ppm, aluminum compound thin films which were formed around ZnO grains at a low temperature and retarded grain growth disappeared suddenly by diffusion into the ZnO grain and ZnO grains grew suddenly. When the doped amount of Al2O3 was 75 ppm and the aluminum compound film was thick enough, part of the film remained unchanged even when a considerable proportion of the aluminum diffused mainly into the ZnO to reach solubility, retarding grain growth.


Archive | 2002

Electrode metal material, capacitor and battery formed of the material and method of producing the material and the capacitor and battery

Seiji Nonaka; Masakazu Tanahashi; Mikinari Shimada; Tamao Kojima; Munehiro Tabata


Archive | 1999

Four-terminal capacitor

Masakazu Tanahashi; Mikinari Shimada; Emiko Igaki


Archive | 1999

Conductive paste, conductive structure using the same, electronic part, module, circuit board, method for electrical connection, method for manufacturing circuit board, and method for manufacturing ceramic electronic part

Emiko Igaki; Masakazu Tanahashi; Takeshi Suzuki


Archive | 1998

Electrolytic capacitor and method for manufacturing the same

Masakazu Tanahashi; Emiko Igaki


Archive | 1999

Electrode for PTC thermistor and method for producing the same, and PTC thermistor

Masahiro Ito; Masakazu Tanahashi; Toshiro Kume; Kouichi Morimoto; Junji Kojima; Emiko Igaki


Archive | 2000

Electrode for electrolytic capacitor

Tsunenori Yoshida; Kenji Hoshino; Masakazu Tanahashi; Yoshihiro Higuchi


Archive | 2008

Electrolytic capacitor and method of producing the same

Seigo Shiraishi; Emiko Igaki; Masakazu Tanahashi


Archive | 2002

Ceramic electronic device and method of manufacturing the device

Takeshi Kimura; Emiko Igaki; Hiroshi Ito; Osamu Yamashita; Masakazu Tanahashi

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