Masamichi Naitoh

A (23×213) surface phase in the 6H–SiC(0001) surface studied by scanning tunneling microscopy

The structure of Si-rich 6H–SiC(0001) surfaces has been investigated by scanning tunneling microscopy (STM) and low-energy electron diffraction. We observed a surface phase with (−2  4 26) periodicity (designated as (23×213) for convenience), coexisting with the known stable (3×3) phase, in a surface obtained by annealing the (3×3) surface at 800 °C. A structural model containing eight Si adatoms per unit cell on the Si adlayer is proposed, which is consistent with the present STM images and with the extension of the (3×3) model structure.

Scanning tunneling microscopy observation of bismuth growth on Si(100) surfaces

Abstract We report the results of a scanning tunneling microscopy investigation of the initial process of bismuth thin-film growth on Si(100) surfaces. Bismuth atoms adsorbed on the Si(100) surface at 400°C form a film of diamond-like structure with a thickness of more than 2 layers, under the influence of the substrate structure. The top layer of the bismuth film shows (2 × n) (n ⋍ 6) periodicity. In a bismuth desorption process, a new surface phase appears, which has linear chains of bismuth dimers perpendicular to substrate-Si step edges.

Structure of Bi-Dimer Linear Chains on a Si(100)Surface : A Scanning Tunneling Microscopy Study

The structure of bismuth-induced Si(100) surfaces has been investigated by scanning tunneling microscopy (STM). Bismuth atoms that adsorb on the surface at 480°C form long linear belts in the Si(100) topmost layer. Each belt consists of two chains of bismuth dimers, and stretches parallel to the ×2 direction of the terrace of the clean Si(100)(2 ×1) surface. From the STM images taken after hydrogen adsorption on the surface, we found that the linear chains of bismuth dimers substitute for four Si-dimer rows on the terrace. We proposed a structural model for the bismuth-dimer chains.

Bismuth-induced surface structure of Si(100) studied by scanning tunneling microscopy

Abstract We report results of a scanning tunneling microscopy investigation of the bismuth-induced structures at Si(100) surfaces. Long linear chains of bismuth dimers are formed on the Si(100) surface after bismuth deposition at 480°C. This may be self-organized by an enhanced migration of atoms along the chains. Moreover, bismuth atoms adsorbed on the surface induce, by expelling silicon atoms from the substrate surface, a (2× n ) restructuring with linear defects perpendicular to the dimer rows on the Si terrace.

A Scanning Tunneling Microscopy Investigation of Adsorption and Clustering of Potassium on the Si(111)7×7 Surface

The adsorption process of potassium on the Si(111)7×7 surface is studied by scanning tunneling microscopy (STM). At low coverages, an STM image reveals that potassium (K) atoms adsorb preferentially on the faulted-halves of the 7×7 unit cells rather ionically so that they do not appear in the filled-state image but present bright images in the empty-state mode. The coverage at which both the faulted and the unfaulted regions are uniformly occupied by K is estimated to be about 6/49. At coverages higher than this, the K atoms tend to form neutral clusters, preferentially in the faulted-regions. The electronic structure around the clusters is modified markedly, which suggests a local charge redistribution.

Direct Observation of the Growth Process of Ag Thin Film on a Hydrogen-Terminated Si(111) Surface

Using a field emission scanning electron microscope (FE-SEM), we have observed the effects of the saturation of surface dangling bonds of Si(111) surfaces with atomic hydrogen upon Ag thin-film (~10 monolayers) growth. In Ag deposition at high temperatures, we found that Ag islands grew to large sizes on a hydrogen-terminated surface compared with the results on the clean surface.

AN STM OBSERVATION OF THE INITIAL PROCESS OF GRAPHITIZATION AT THE 6H-SiC(000¯1) SURFACE

We applied scanning tunneling microscopy (STM) as well as low-energy electron diffraction (LEED) to analyze the initial process of graphitization at

Ga-rich GaP(001)(2×4) surface structure studied by low-energy ion scattering spectroscopy

{\rm 6H \mbox-SiC}(000{\bar 1})

An STM observation of silver growth on hydrogen-terminated Si(111) surfaces

surfaces. After annealing a

A clean GaP(001)4×2/c(8×2) surface structure studied by scanning tunneling microscopy and ion scattering spectroscopy

{\rm 6H \mbox-SiC}(000{\bar 1})