Masanobu Hasegawa

Development of optical coatings for 157-nm lithography. I. Coating materials

In a basic study to identify low-loss optics for applications in F2 lithography, five potential coating materials (AlF3, Na3AlF6, MgF2, LaF8, and GdF3) and three deposition methods (thermal evaporation by a resistance heater and by electron beam and ion-beam sputtering) were investigated in the vacuum ultraviolet (VUV) region. Samples were supplied as single-layer coatings on CaF2 substrates by four Japanese coating suppliers. Refractive indices (n) and extinction coefficients (k) of these coatings at 157 nm were evaluated; the transmittance and the reflectance were measured by a VUV spectrometer and were compared. As a result, resistance heating thermal evaporation is seen to be the optimal method for achieving low-loss antireflection coatings. The relation among optical constants, microstructures, and stoichiometry is discussed.

EUV wavefront measurement of six-mirror optics using EWMS

The wavefront measurements have been performed with the EUV Wavefront Metrology System (EWMS) for the first time using a prototype projection optic as a test optic. The wavefronts of the test optic was measured at the five positions in the exposure field with the Digital Talbot Interferometer (DTI). The RMS magnitude of the wavefront errors ranged from 0.71 λ (9.58 nm) to 1.67 λ (22.75 nm). The results obtained with the DTI were compared to those with the Cross Grating Lateral Shearing Interferometer (CGLSI). As a result of a repeatability assessment, it was found that the EWMS can stably measure the wavefronts of the test optic. Additionally, unwrapping of the phase map was found to be related to the precision of the measurement.

Comparison of EUV interferometry methods in EUVA project

We are developing an at-wavelength interferometer for EUV lithography systems. The goal is the measurement of the wavefront aberration for a six-aspherical mirror projection optic. Among the six methods that EEI can measure, we selected CGLSI and PDI for comparison. PDI is a method well-known for its high accuracy, while CGLSI is a simple measurement method. Our comparison of PDI and CGLSI methods, verified the precision of the CGLSI method. The results show a difference between the methods of 0.33nm RMS for terms Z5-36. CGLSI measurement wavefronts agree well with PDI for terms Z5-36, and it is thought of as a promising method. Using FFT analysis, we estimated and then removed the impact of flare on the wavefront. As a result of having removed the influence of flare, the difference between CGLSI and PDI improved to only 0.26nm RMS in Zernike 5-36 terms. We executed PDI wavefront retrieval with FFT, which has not been used till now. By confirming that the difference between methods using FFT and Phase shift is 0.035nm RMS for terms Z5-36, we have proven that PDI wavefront analysis with FFT is possible.

Recent Progress of EUV Wavefront Metrology in EUVA

The recent experimental results of EUV wavefront metrology in EUVA are reported. EUV Experimental Interferometer (EEI) was built at the NewSUBARU synchrotron facility of University of Hyogo to develop the most suitable wavefront measuring method for EUV projection optics. The result is to be reflected on EWMS (EUV Wavefront Metrology System) that measures wavefront aberrations of a six-aspherical mirror projection optics of NA0.25, of a mass-production EUV lithography tool. The experimental results of Point Diffraction Interferometer (PDI) and Lateral Shearing Interferometer (LSI) are shown and the error factors and the sensitivity of astigmatism measurements of these methods are discussed. Furthermore, for reducing these kinds of errors, another type of shearing interferometer called DTI (Digital Talbot interferometer) is newly introduced.

Shearing Interferometry for at Wavelength Wavefront Measurement of Extreme-Ultraviolet Lithography Projection Optics

We present a type of lateral shearing interferometer (LSI) for at-wavelength characterization of the projection lens for use in extreme-ultraviolet lithography (EUVL). LSI is one of the potential candidates for high Numerical Aperture (NA) optics testing at the EUV region. To address the problem of multiple-beam interference, we propose a general approach for derivation of a phase-shift algorithm that is able to eliminate the undesired 0th order effect. The main error source effects including shear ratio estimate, hyperbolic calibration, and charge coupled device (CCD) size, etc. are characterized and the measurement accuracy of the LSI is estimated to be within 7 mλ rms (0.1 nm rms at 13.5 nm wavelength) for testing the wavefront of EUVL projection optics.

Development of an experimental EUV interferometer for benchmarking several EUV wavefront metrology schemes

An experimental extreme UV (EUV) interferometer (EEI) using an undulator light source was designed and constructed for the purpose of developing wavefront measurement technology with the exposure wavelength of the projection optics of EUV lithography systems. EEI has the capability of performing five different EUV wavefront metrology methods.

Wave-front errors of reference spherical waves in high-numerical aperture point diffraction interferometers

In phase-shifting point diffraction interferometry (PS/PDI), a pinhole with a diameter of 34 nm is necessary to measure a wave-front aberration of extreme ultraviolet projection optics of numerical aperture (NA) 0.20. However, it is extremely difficult to process such a small pinhole, and light transmission through the pinhole becomes too low. Here, the diameter of a pinhole is optimized, together with the thickness of a Ta membrane, for a converging wave of NA 0.20 with no aberration so that the difference between a wave front produced by the pinhole and that of a spherical wave is minimized. On that condition, the optimum values are a diameter of 50 nm and a thickness of 200 nm. For these values, behaviors are examined in real cases, including focal point shifts and aberrations with incident light. Astigmatism in the aberrations has the most impact on a wave-front error, and a 0°–90° astigmatism (Z5) coefficient in the FRINGE Zernike polynomials of test optics is required to be less than 50 mλ to use th...

Wavefront measurement interferometry at the operational wavelength of extreme-ultraviolet lithography.

Two basic types of interferometer, a point diffraction interferometer (PDI) and a lateral shearing interferometer (LSI) suitable for operation in the extreme-ultraviolet (EUV) wavelength region, are described. To address the challenges of wavefront measurement with an accuracy of 0.1 nm rms, we present a calibration method for the PDI that places a mask with two large windows at the image plane of the illumination point light source and a general approach to deriving the phase-shift algorithm series that eliminates the undesired zeroth-order effect in the LSI. These approaches to improving the measurement accuracy were experimentally verified by the wavefront measurements of a Schwarzschild-type EUV projection lens.

EUV wavefront metrology system in EUVA

An Experimental extreme ultraviolet (EUV) interferometer (EEI) using an undulator as a light source was installed in New SUBARU synchrotron facility at Himeji Institute of Technology (HIT). The EEI can evaluate the five metrology methods reported before. (1) A purpose of the EEI is to determine the most suitable method for measuring the projection optics of EUV lithography systems for mass production tools.

Development of optical coatings for 157-nm lithography. II. Reflectance, absorption, and scatter measurement

The total loss that can be suffered by an antireflection (AR) coating consists of reflectance loss, absorption loss, and scatter loss. To separate these losses we developed a calorimetric absorption measurement apparatus and an ellipsoidal Coblentz hemisphere based scatterometer for 157-nm optics. Reflectance, absorption, and scatter of AR coatings were measured with these apparatuses. The AR coating samples were supplied by Japanese vendors. Each AR coating as supplied was coated with the vendors coating design by that vendors coating process. Our measurement apparatuses, methods, and results for these AR coatings are presented here.