Masaru Kubo

Si-OEIC with a built-in PIN-photodiode

A Si-OEIC with a built-in PIN-photodiode has been developed by a new device structure. We have successfully fabricated an optical link receiver with a speed of 50 Mb/s. The new device structure consists of stacked epitaxial layers each with a buried diffusion region. The cutoff frequency of the photodiode thus realized is 300 MHz and the fall time is 1.6 ns. In this paper, the structure of this new device is presented along with its fabrication process, while the performance is analyzed using device simulation. It was found that the speed of the PIN-photodiode in the Si-OEIC is dominated by carrier transit time in the n/sup +/-buried region. Further investigation was made by device simulation on two advanced structures. The speed of response of PIN-photodiode will be improved to as fast as 1 ns by the current Si technology. By more advanced technology, 0.7 ns will be achieved for the fall time showing the ultimate characteristic of Si-OEIC. >

High speed Si-OEIC (OPIC) for optical pickup

An optical pickup OPIC/sup TM/ with a built-in high-speed split photodiode and new device structure, has been developed. We have successfully fabricated the OPIC with a cutoff frequency of 56 MHz for 780 nm wavelength radiation. We developed hologram laser in which a semiconductor laser, the OPIC and hologram glass are set as a unit, too. The development of these OPIC were made possible by the high-speed split photodiode, which have very high resistive Si substrate for reduction of the junction capacitance. The cutoff frequency of the high speed split photodiode thus realized is 61 MHz for 780 nm wavelength radiation. This photodiode has a double-layer anti-reflection film consisting of a silicon oxide film as the first layer and a silicon nitride film as the second layer. We show the structure of this new device, its fabrication process and the performance of the photodiode and OPIC.

Si-OEIC (OPIC) for optical pickup

An optical pickup OPIC/sup TM/ with a built-in high-speed split photodiode and new device structure, has been developed. We have successfully fabricated the OPIC with a cutoff frequency of 18.4 MHz for 780 nm radiation and 21.1 MHz for 635 nm radiation. The development of the OPIC was made possible by the high-speed photodiode, which has n-type buried diffusion regions formed in the vicinity of the p-type buried isolation diffusion regions. An anti-reflection film is formed directly on the isolation region of the split photodiode as well as on the photodiode, therefore enhancing the sensitivity. The cutoff frequency of the photodiode thus realized is 24 MHz for 780 nm radiation and 41 MHz for 635 nm radiation and the reflection rate is lower than 3%. The OPIC is compatible with 12/spl times/ speed CD-ROM and DVD optical systems. We show the structure of this new device and its fabrication process. We found that the cutoff frequency of the photodiode is lower when the isolation region is irradiated than when the center region of the photodiode is irradiated. We studied the mechanism of the above difference of the cutoff frequency of the photodiode using device simulations.