Masaru Onga

Gate-Optimized Thermoelectric Power Factor in Ultrathin WSe2 Single Crystals

We report an electric field tuning of the thermopower in ultrathin WSe2 single crystals over a wide range of carrier concentration by using electric double-layer (EDL) technique. We succeeded in the optimization of power factor not only in the hole but also in the electron side, which has never been chemically accessed. The maximized values of power factor are one-order larger than that obtained by changing chemical composition, reflecting the clean nature of electrostatic doping.

High circular polarization in electroluminescence from MoSe2

The coupling between the valley degree of freedom and the optical helicity is one of the unique phenomena in transition metal dichalcogenides. The significant valley polarization evaluated from circularly polarized photoluminescence (PL) has been reported in many transition metal dichalcogenides, except in MoSe2. This compound is an anomalous material showing ultra-fast relaxation of the valley polarized states, which causes negligible polarization in the PL. Meanwhile, circularly polarized electroluminescence (EL) has been recently reported in a WSe2 light-emitting transistor, providing another method for using the valley degree of freedom. Here, we report the EL properties of MoSe2, demonstrating electrical switching of the optical helicity. Importantly, we observed high circular polarization reaching 66%. The results imply that the dominant mechanism of circularly polarized EL is robust against intervalley scattering, in marked contrast to the PL.