Masaru Yasui

Properties of Amorphous Films Prepared from SiH4–N2–H2 Gas Mixture

The electrical properties and the IR absorption spectra of amorphous films made by the glow-discharge of a SiH4–N2–H2 gas mixture have been investigated as a function of the nitrogen to silane mole fraction. Efficient doping is possible in these amorphous films. The highest resistivity obtained is 1×1014 Ωcm, which is sufficient to be used as a photoreceptor of electrophotography.

Electrical properties of glow discharge amorphous SiNx: H thin films

Abstract Amorphous SiNx:H films were prepared by the r.f. glow discharge of SiH4N2H2 mixtures and their electrical properties were investigated as a function of x. Efficient doping is possible in these films and a high photosensitivity as well as a low conductivity of 10−14 S cm−1 are obtained by adding B2H6 in the molar ratio 10−4 to SiH4N2 in the gas phase. These interesting properties are achieved by the reduction in the hopping conduction due to the incorporation of nitrogen.

Effects of rf Power and Substrate Temperature on Properties of a-SiNx:H Films Prepared by Glow-Discharge of SiH4–N2–H2

Amorphous SiNx:H films were prepared by the rf glow-discharge of gaseous mixtures of SiH4–N2–H2 at various substrate temperatures and rf power densities. The nitrogen and hydrogen contents of the films were determined from the intensities of the IR absorption due to vibrations of Si–N bonds and Si–H bonds. The effects of these deposition parameters on the properties of the amorphous films are discussed on the basis of the variation of the composition and structure of the films.

Plasma-Enhanced Deposition of Silicon Nitride from SiH4?N2 Mixture

Excellent silicon nitride films which can be used as the gate insulator of an a-Si FET are fabricated by RF glow-discharge of SiH4–N2–H2 gas mixtures. Resistivity of larger than 1×1016 Ωcm and breakdown strength of 6×106 V/cm are realized. The optimum deposition conditions are evaluated and briefly discussed in connection with mechanisms of the plasma-enhanced deposition.