Masataka Noguchi

A hybrid silicon evanescent quantum dot laser

We report the first demonstration of a hybrid silicon quantum dot (QD) laser, evanescently coupled to a silicon waveguide. InAs/GaAs QD laser structures with thin AlGaAs lower cladding layers were transferred by direct wafer bonding onto silicon waveguides defining cavities with adiabatic taper structures and distributed Bragg reflectors. The laser operates at temperatures up to 115 °C under pulsed current conditions, with a characteristic temperature T 0 of 303 K near room temperature. Furthermore, by reducing the width of the GaAs/AlGaAs mesa down to 8 µm, continuous-wave operation is realized at 25 °C.

45 GHz Bandwidth of Si Waveguide-Integrated PIN Ge Photodiode,and its Zero-Bias Voltage Operation

1 Institute for Photonics-Electronics Convergence System Technology (PECST) 2 Photonics Electronics Technology Research Association (PETRA), West 7 SCR, 16-1, Onogawa, Tsukuba, Ibaraki 305-8569, Japan 3 National Institute of Advanced Industrial Science and Technology (AIST), West 7 SCR, 16-1, Onogawa, Tsukuba, Ibaraki 305-8569, Japan 4 Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro, Tokyo 153-8505, Japan Phone: +81-29-868-6520 E-mail: j-fujikata@petra-jp.org

Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-k Gate Metal–Insulator–Semiconductor Field-Effect Transistors with NiSi Source/Drain

We have proposed an area-selective post-deposition annealing (PDA) process that involves a combination of flash lamp annealing and the use of a Si photoenergy absorber (Si-PEA) for metal/high-k gate last metal–insulator–semiconductor field-effect transistors (MISFETs) with NiSi on source/drain (S/D). The process makes it possible to suppress the increase in both the sheet resistance and junction leakage current of NiSi S/D regions. This PDA process also showed optimality for silicide gate electrode formation with silicidation of part of the Si-PEA. It was found that the flash lamp PDA with Si-PEA on nickel–silicide/HfAlOx/SiO2 gate-last MISFETs reduced electron trapping at the gate dielectric and resulted in better PBTI immunity than conventional rapid thermal PDA and flash lamp PDA without Si-PEA.

High-speed and highly efficient Si optical modulator with strained SiGe layer

We developed a high speed and high efficiency of depletion type Si optical modulator (Si-MOD) with a pn junction by applying a p-type-doped strained SiGe layer which was slacked on the lateral pn junction type Si-MOD. We designed the optimum Si-MOD structure and demonstrated a very high modulation efficiency of 0.81 Vcm. which is one of die mosl efficient in Si-MODs with a pn junction. We also demonstrated u high speed operation of 25 Gbps for the Si-MOD al around 1.3 μm wavelength.

High Performance Silicon Waveguide-Integrated PIN and Schottky Ge Photodiodes and their Link with Inverter-Type CMOS TIA Circuits

1 Institute for Photonics-Electronics Convergence System Technology (PECST) 2 Photonics Electronics Technology Research Association (PETRA), Tsukuba, Ibaraki 305-8569, Japan 3 National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan 4 Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan Phone: +81-29-868-6520 E-mail: j-fujikata@petra-jp.org