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Masato Irikura

Sumitomo Electric Industries

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Publication

Featured researches published by Masato Irikura.

Archive | 2007

Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device

Keiji Ishibashi; Takayuki Nishiura; Masato Irikura; Seiji Nakahata

Archive | 2007

Surface treating method of nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer, semiconductor device, and manufacturing method of nitride crystal substrate with epitaxial layer and semiconductor device

Masato Irikura; Keiji Ishibashi; Seiji Nakahata; Takayuki Nishiura; 成二 中畑; 正登 入倉; 恵二 石橋; 隆幸 西浦

Archive | 2003

Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer

Masahiro Nakayama; Masato Irikura

Archive | 2007

Group iii element nitride substrate, substrate with epitaxial layer, processes for producing these, and process for producing semiconductor element

Keiji Ishibashi; Akihiro Hachigo; Masato Irikura; Seiji Nakahata

Archive | 2009

GaN Substrate Manufacturing Method, GaN Substrate, and Semiconductor Device

Masato Irikura; Seiji Nakahata

Archive | 2005

Nitride semiconductor substrate and method of producing same

Masato Irikura; Yasushi Mochida; Masahiro Nakayama

Archive | 2007

Manufacturing method of group III nitride substrate, group III nitride substrate, group III nitride substrate with epitaxial layer, manufacturing method of group III nitride substrate with epitaxial layer, and manufacturing method of group III nitride device

Keiji Ishibashi; Masato Irikura; Seiji Nakahata

Archive | 2009

GROUP III NITRIDE CRYSTAL AND METHOD FOR SURFACE TREATMENT THEREOF, GROUP III NITRIDE STACK AND MANUFACTURING METHOD THEREOF, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Keiji Ishibashi; Naoki Matsumoto; Masato Irikura

Archive | 2011

Group iii nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device

Keiji Ishibashi; Akihiro Hachigo; Masato Irikura; Seiji Nakahata

Archive | 2003

EDGE POLISHED NITRIDE SEMICONDUCTOR SUBSTRATE, EDGE POLISHED GaN FREE-STANDING SUBSTRATE, AND EDGE PROCESSING METHOD OF NITRIDE SEMICONDUCTOR SUBSTRATE

Masato Irikura; Masahiro Nakayama; 雅博 中山; 正登 入倉

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Keiji Ishibashi

Sumitomo Electric Industries

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Seiji Nakahata

Sumitomo Electric Industries

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Masahiro Nakayama

Sumitomo Electric Industries

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Akihiro Hachigo

Sumitomo Electric Industries

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Takayuki Nishiura

Sumitomo Electric Industries

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Fumitake Nakanishi

Sumitomo Electric Industries

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Kaoru Shibata

Sumitomo Electric Industries

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Naoki Matsumoto

Sumitomo Electric Industries

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Shinji Okabayashi

Sumitomo Electric Industries

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Yasuhiro Honzu

Sumitomo Electric Industries

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