Masato Irikura

Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device

Surface treating method of nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer, semiconductor device, and manufacturing method of nitride crystal substrate with epitaxial layer and semiconductor device

Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer

Group iii element nitride substrate, substrate with epitaxial layer, processes for producing these, and process for producing semiconductor element

GaN Substrate Manufacturing Method, GaN Substrate, and Semiconductor Device

Nitride semiconductor substrate and method of producing same

Manufacturing method of group III nitride substrate, group III nitride substrate, group III nitride substrate with epitaxial layer, manufacturing method of group III nitride substrate with epitaxial layer, and manufacturing method of group III nitride device

GROUP III NITRIDE CRYSTAL AND METHOD FOR SURFACE TREATMENT THEREOF, GROUP III NITRIDE STACK AND MANUFACTURING METHOD THEREOF, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Group iii nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device

EDGE POLISHED NITRIDE SEMICONDUCTOR SUBSTRATE, EDGE POLISHED GaN FREE-STANDING SUBSTRATE, AND EDGE PROCESSING METHOD OF NITRIDE SEMICONDUCTOR SUBSTRATE