Masato Uesugi

A study of the relationship between junction depth and GaAs solar cell performance under a 1 MeV electron fluence

The solution to the continuity equation is used to optimize the p-GaAs layer thickness in the p-Ga 0.14 Al 0.86 As/p-GaAs/n-GaAs solar cell exposed to a 1 MeV electron fluence. In this study, the short-circuit current is used as a reference for comparison. By this means, it is found that short-circuit current density J sc , is a weak function of p-GaAs layer thickness for the unirradiated cell structure that was studied, but a shallower junction is preferred to maximize J sc , after exposure to 1 MeV electron fluence.

Flight data of solar cell monitor on Engineering Test Satellite-V (ETS-V)

Engineering Test Satellite-V (ETS-V) launched on 27 August 1987 and placed into geostationary orbit at 150 degrees east latitude, was equipped with the Solar Cell Monitor (SCM). The SCM has collected data related to the space environment. The SCM had 24 kinds of cells including silicon (Si) cells and gallium arsenide (GaAs) cells. The short-circuit current (I sc ) data have been analyzed for about six years. The degradation data due to a solar flare which occurred on October 19 in 1989 were also recorded. All flight data agree quantitatively with ground test data.

A radiation-hardened CMOS 177K gate array having libraries compatible with commercial ones

A radiation-hardened CMOS gate array, which is library-compatible with commercial ones, has been developed using 1.0 /spl mu/m CMOS process technology. This gate array has 177K raw-gates and over 100K gates of them are usable. Also it has a radiation tolerance over 10/sup 5/ rad (Si).