Masayoshi Umeno

ALGAAS/GAAS TJS laser diodes fabricated on Si substrates by MOCVD

Abstract AlGaAs/GaAs TJS (Transverse Junction Stripe) laser diodes are fabricated on p-Si substrates by MOCVD. The preferential Zn diffusion is performed in DH structure on Si at 650°C using sputtered SiO 2 as diffusion mask. The diodes have lased at room temperature (27°C) pulsed conditions with the minimum threshold current of 379mA.

Growth and characterization of GaAs grown on Si substrates by metalorganic chemical vapor deposition.

GaAs crystals were grown on Si substrates [(100) 2° off] by metalorganic chemical vapor deposition (MOCVD). The intermediate layers of GaP, (GaP/GaAsP) strained layer superlattice (SLS) and (GaAsP/GaAs) SLS were inserted to relax the lattice mismatch between GaAs and Si. They were characterized for different thickness of GaAs. The curvature radius of the wafer and the lattice constant perpendicular to the surface decreased with the increasing thickness. The etch pit density also decreased with the increasing thickness and was about 4000cm-2 for 8μm-thick GaAs. In this case no crack was observed on the surface.AlGaAs/GaAs double heterostructure laser diodes have been fabricated on GaAs/Si substrates by MOCVD. A threshold current density Jth at 16.5°C and a characteristic temperature To were 4.9kA/cm2 and 179K respectively.