Masayuki Takagishi

The applicability of CPP-GMR heads for magnetic recording

In this paper, we mainly discuss the extendability of current perpendicular to plane giant magnetoresistive (CPP-GMR) heads beyond 100 Gbpsi by using micromagnetic simulation and simulation techniques. An area map of CPP-GMRs resistance-area product (RA) and magnetoresistive ratio for several areal densities is made, which suggests that downsizing of a CPP-GMR head does not cause a decrease in output voltage differently from a current in plane GMR (CIP-GMR) head. At this point, a CPP-GMR has the advantage of extendability to a higher areal density over CIP-GMR, and is the major candidate for the next generation. A CIP-GMR seems to have a scalability limit around 100-200 Gbpsi. On the other hand, the area map also suggests that the RA of the CPP-GMR is a more important keyfactor for higher areal density than for CIP-GMR. The CPP-GMR, therefore, requires not only higher MR, but also less RA as areal density gets higher. Tunneling MR (TMR) has exactly the same problem, so CPP-GMR also has many advantages over TMR, with too high an RA. Additionally, we present CPP-GMR films with the potential for around 500 Gbpsi and discuss a suitable read-head structure for CPP-GMR. Micromagnetic simulation results indicate that the read track width will be controlled by a magnetic field due to the sense current of CPP. We will discuss overall studies on scalability of CPP-GMR.

MR ratio enhancement by NOL current-confined-path structures in CPP spin valves

We have compared the magnetoresistance (MR) performance of current-confined-path (CCP) current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin valve films with a nano-oxide-layer (NOL), made between natural oxidation (NO) and ion-assisted oxidation (IAO). For the NO, an MR ratio was only 1.5% at an RA of 370 m/spl Omega//spl mu/m/sup 2/, whereas for the IAO, an MR ratio was greatly increased to 5.4% at an RA of 500 m/spl Omega//spl mu/m/sup 2/. Fitted data by the Valet-Fert model showing larger MR enhancement effect by the IAO is explained by the improvement of the metal-purity of the Cu inside the CCP structure. By further improvement of metal-purity of the Cu, a large MR ratio of more than 30% can be expected at a small RA of 300 m/spl Omega//spl mu/m/sup 2/. The CCP-CPP spin valve film is a promising candidate for realizing high-density recording heads for 200 to 400-Gbpsi recording.

Output enhancement of spin-valve giant magnetoresistance in current-perpendicular-to-plane geometry

In this work, we present a suitable material for metal-based spin-valve in current-perpendicular-to-plane (CPP) geometry. The AΔR (A is the element size and ΔR is the change in resistance) was investigated for three kinds of free and pinned layers material, that is, Co90Fe10, Fe50Co50, and Fe50Co50 with half-atomic Cu layers. When the free and pinned layers are 5 nm, AΔR is 1.0 mΩ μm2, 1.6 mΩ μm2, and 2.9 mΩ μm2, respectively. Moreover, the dual-type spin valve having Fe50Co50 with half-atomic Cu layers achieved 5.2 mΩ μm2. According to the free and pinned layers thickness dependence of AΔR, the spin-dependent resistance at the interfaces between ferromagnetic layers and spacer Cu is enhanced mainly by changing from Co90Fe10 to Fe50Co50, and the spin-dependent bulk resistance in free and pinned layers is enlarged by inserting half-atomic Cu layers.

Magnetoresistance Ratio and Resistance Area Design of CPP-MR Film for 2–5

We estimated the current perpendicular to plane (CPP)-magnetoresistance (MR) performance target required for hard disk drives (HDDs) with areal density from 2 to 5 Tb/in2 , considering spin transfer torque (STT) and thermal magnetic noise. It is found that the noise due to STT drastically affects the MR performance target for low resistance area (RA) film. Read elements with higher RA (around 0.1-0.3 ¿·¿m2 ) are preferable to control STT. In addition, thermal magnetic noise remained smaller than media magnetic noise for 2 Tb/in2 while it becomes comparable to media magnetic noise for 5 Tb/in2 , suggesting the necessity of a new method to control thermal magnetic noise.

\hbox{Tb/in}^{2}

We have achieved a magnetoresistance (MR) ratio of 7%-10% at a resistance area product (RA) of 0.5-1.5 Omegamum2 by ferromagnetic FeCo nanocontacts in Al nano-oxide-layer (NOL) with current-perpendicular-to-plane spin-valve (CPP-SV) structure. Conductive atomic-force-microscopy shows clear current-path regions of a few nanometers in size surrounded by the Al-NOL. The MR dependence on resistance area product (RA) is well explained by the current-confined-path model assuming that the spin-dependent scattering has an FeCo nanocontact origin, different from tunnel magnetoresistance (TMR). Resistance increases with increasing bias voltage, indicating joule heating by high-current density in nanocontacts, in contrast to TMR. The MR origin is mainly interpreted as spin-dependent scattering due to domain wall formed at ferromagnetic nanocontact

Read Sensors

We have reported that body-centered-cubic (bcc) Fe50Co50 with ultrathin Cu layers has large spin-dependent bulk scattering and enhances AΔR of spin valves. In order to clarify the role of Cu, two series of samples with (Fe50Co50 1 nm/Cu)×5 were prepared by two different sputtering machines. Machine A has a high rate, and machine B has a comparatively low rate. Both of AΔR in series A and B are increased by inserting thin Cu of about 0.1 nm, but they have a significant difference in Cu thickness dependence. While series A keeps high AΔR through the Cu thickness, AΔR in series B decreases when Cu is thickened. In order to find the reason for the difference, we took the extended x-ray absorption structure (EXAFS) spectra. By comparing AΔR and EXAFS, it was found that the very thin Cu of about 0.1 nm in Fe50Co50 takes a body-centered-cubic bcc structure, namely a solid solution state. Cu of 1 nm in spin valves with high AΔR takes a bcc and face-centered-cubic (fcc) evenly, and that with a low AΔR is a fcc str...

Magnetoresistance of FeCo Nanocontacts With Current-Perpendicular-to-Plane Spin-Valve Structure

We have investigated the microwave oscillations due to a spin transfer effect induced by direct current in ferromagnetic nanocontact magnetoresistive (NCMR) elements with a current-perpendicular-to-plane spin-valve structure consisting of an FeCo/FeCo–AlOx nano-oxide layer/FeCo multilayer for the reference/spacer/free layers, respectively. Characteristic microwave oscillations were observed in the NCMR elements at different magnetization states induced by the application of a spin-polarized current, which are considered to be related to the introduction of a ferromagnetic NC to spacer layer (large interlayer coupling) and the resonance concerning the stability of the magnetization states of the free and reference layers around the NCs. A marvelously narrow full width at half maximum (FWHM) of l0–20 MHz is observed under a high applied magnetic field where the reference layer magnetization is slightly off axis relative to the pinned direction. By contrast, a wider FWHM of 80–600 MHz is observed at the magn...

Effect of inserted Cu on current-perpendicular-to-plane-giant magnetoresistance of Fe50Co50 spin valves

A large output voltage of 0.7 mV at 1 mA charge current is demonstrated for all-metallic nonlocal spin valves using Co2(FeMn)Si Heusler alloy and Cu with a junction area of about 50 nm2. The output is attributed to the junction size reduction as well as to the high spin polarization in the Heusler alloy. An analysis using a one-dimensional model reveals that the spin diffusion length in the Cu layer shows no clear degradation even in the case of a 50 nm2 junction. When the junction is reduced further to 10 nm2, an output voltage of about 10 mV is expected.

Characteristics of microwave oscillations induced by spin transfer torque in a ferromagnetic nanocontact magnetoresistive element

We have developed the FeCo nanocontact magnetoresistance (NCMR) with spin-valve structure [H. N. Fuke et al., IEEE Trans. Magn. 43, 2848 (2007)] which exhibits up to a MR ratio of 11%–12% at a resistance area (RA) of 0.3–0.55 Ω μm2. The nanocontact configurations were estimated at about 2 nm in in-plane diameter, 1.2 nm in thickness, and 0.55% in density for a RA∼0.5 Ω μm2 film based on in-plane current distribution by conductive atomic-force microscopy cross sectional transmission electron microscope images of the NCMR. The origin of the NCMR was discussed by comparing magnetic field dependence of resistance, with micromagnetics simulation based on the diffusive MR theory. It is found that our NCMR cannot be explained by diffusive domain wall theory or bulk scattering in free and pinned layers. It is likely that a theory on the basis of a ballistic MR consideration is needed to interpret our MR origin.

All-metallic nonlocal spin valves using polycrystalline Co2(FeMn)Si Heusler alloy with large output

When the surface energy of bottom layer is lower than top layer, the atoms of bottom layer should be pumped up at the triple point of the grain boundary. This phenomenon should be useful for the fabrication of well-defined nanobridge. To confirm the Atom Pumping-Up mechanism for metal/metal thin films, Ta(2 nm) on epitaxial MgO(001)/Fe(001) films were prepared by the electron beam deposition method. The Pumping-Up mechanism was successfully confirmed by the Auger Electron Spectroscopy, the in situ Scanning Tunneling Microscopy, and the Transmission Electron Microscope observation after heat treatment of 400 degCtimes30 min. The size of the Fe bridges was 2-5 nm. Furthermore, the magnetic exchange coupling effect on the magnetization process through the ferromagnetic bridges between two Fe layers in MgO/Fe/Ta/Fe after Atom Pumping-Up shows a good agreement to the micromagnetics simulation result from the assumption of ferromagnetic bridges with the size of 1-4 nm