Matthew J. Dicken

Frequency tunable near-infrared metamaterials based on VO_2 phase transition

Engineering metamaterials with tunable resonances from mid-infrared to near-infrared wavelengths could have far-reaching consequences for chip based optical devices, active filters, modulators, and sensors. Utilizing the metal-insulator phase transition in vanadium oxide (VO(2)), we demonstrate frequency-tunable metamaterials in the near-IR range, from 1.5 - 5 microns. Arrays of Ag split ring resonators (SRRs) are patterned with e-beam lithography onto planar VO(2) and etched via reactive ion etching to yield Ag/VO(2) hybrid SRRs. FTIR reflection data and FDTD simulation results show the resonant peak position red shifts upon heating above the phase transition temperature. We also show that, by including coupling elements in the design of these hybrid Ag/VO(2) bi-layer structures, we can achieve resonant peak position tuning of up to 110 nm.

Electrooptic Modulation in Thin Film Barium Titanate Plasmonic Interferometers

We demonstrate control of the surface plasmon polariton wavevector in an active metal-dielectric plasmonic interferometer by utilizing electrooptic barium titanate as the dielectric layer. Arrays of subwavelength interferometers were fabricated from pairs of parallel slits milled in silver on barium titanate thin films. Plasmon-mediated transmission of incident light through the subwavelength slits is modulated by an external voltage applied across the barium titanate thin film. Transmitted light modulation is ascribed to two effects, electrically induced domain switching and electrooptic modulation of the barium titanate index.

Probing the size and density of silicon nanocrystals in nanocrystal memory device applications

Structural characterization via transmission electron microscopy and atomic force microscopy of arrays of small Si nanocrystals embedded in SiO2, important to many device applications, is usually difficult and fails to correctly resolve nanocrystal size and density. We demonstrate that scanning tunneling microscopy (STM) imaging enables a much more accurate measurement of the ensemble size distribution and array density for small Si nanocrystals in SiO2, estimated to be 2-3 nm and 4 x 10^(12) - 3 x 10^(13) cm^(-2), respectively, in this study. The reflection high energy electron diffraction pattern further verifies the existence of nanocrystallites in SiO2. The present STM results enable nanocrystal charging characteristics to be more clearly understood: we find the nanocrystal charging measurements to be consistent with single charge storage on individual Si nanocrystals. Both electron tunneling and hole tunneling processes are suggested to explain the asymmetric charging/ discharging processes as a function of bias.

Study of orientation effect on nanoscale polarization in BaTiO3 thin films using piezoresponse force microscopy

We have investigated the effect of texture on in-plane (IPP) and out- of plane (OPP) polarizations of pulsed-laser-deposited BaTiO3 thin films grown on Pt and La0.5Sr0.5CoO3 (LSCO) buffered Pt electrodes. The OPP and IPP polarizations were observed by piezoresponse force microscopy (PFM) for three-dimensional polarization analyses in conjunction with conventional diffraction methods using x-ray diffraction and reflection high energy electron diffraction measurements. BaTiO3 films grown on Pt electrodes exhibited highly (101) preferred orientation with higher IPP component whereas BaTiO3 film grown on LSCO/Pt electrodes showed (001) and (101) orientations with higher OPP component. Measured effective d(33) values of BaTiO3 films deposited on Pt and LSCO/ Pt electrodes were 14.3 and 54.0 pm/ V, respectively. Local piezoelectric strain loops obtained by OPP and IPP-PFM showed that piezoelectric properties were strongly related to film orientation.

Nanoindentation of the a and c domains in a tetragonal BaTiO3 single crystal

Nanoindentation in conjunction with piezoresponse force microscopy was used to study domain switching and to measure the mechanical properties of individual ferroelectric domains in a tetragonal BaTiO3 single crystal. It was found that nanoindentation has induced local domain switching; the a and c domains of BaTiO3 have different elastic moduli but similar hardness. Nanoindentation modulus mapping on the a and c domains further confirmed such difference in elasticity. Finite element modeling was used to simulate the von Mises stress and plastic strain profiles of the indentations on both a and c domains, which introduces a much higher stress level than the critical value for domain nucleation.

Active plasmonic devices and optical metamaterials

We studied active near-infrared metamaterials based on phase transition of vanadium oxide thin films, asymmetrically coupled split-ring resonators for narrowing resonance line-widths, field effect modulation of plasmon propagation and 3D single layer, plasmonic negative-index metamaterials.

A Phase Diagram of Low Temperature Epitaxial Silicon Grown by Hot-wire Chemical Vapor Deposition for Photovoltaic Devices

We have investigated the low-temperature epitaxial growth of thin silicon films by hot-wire chemical vapor deposition (HWCVD). Using reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM), we have found conditions for epitaxial growth at low temperatures achieving twinned epitaxial growth up to 6.8 µm on Si(100) substrates at a substrate temperature of 230°C. This opens the possibility of growing high quality films on low cost substrates. The H_2:SiH_4 dilution ratio was set to 50:1 for all growths. Consistent with previous results, the epitaxial thickness is found to decrease with an increase in the substrate temperature.