Matthias Florian

Cavity-assisted emission of polarization-entangled photons from biexcitons in quantum dots with fine-structure splitting.

We study the quantum properties and statistics of photons emitted by a quantum-dot biexciton inside a cavity. In the biexciton-exciton cascade, fine-structure splitting between exciton levels degrades polarization-entanglement for the emitted pair of photons. However, here we show that the polarization-entanglement can be preserved in such a system through simultaneous emission of two degenerate photons into cavity modes tuned to half the biexciton energy. Based on detailed theoretical calculations for realistic quantum-dot and cavity parameters, we quantify the degree of achievable entanglement.

Pronounced Purcell enhancement of spontaneous emission in CdTe/ZnTe quantum dots embedded in micropillar cavities

The coupling of CdTe/ZnTe quantum dot(QD) emission to micropillar cavityeigenmodes in the weak coupling regime is demonstrated. We analyze photoluminescencespectra of QDs embedded in monolithic micropillar cavities based on Bragg mirrors which contain MgSe/ZnTe/MgTe superlattices as low-index material. The pillar emission shows pronounced cavityeigenmodes, and their spectral shape is in good agreement with simulations. QD emission in resonance with the cavity mode is shown to be efficiently guided toward the detector, and an experimental Purcell enhancement by a factor of 5.7 is determined, confirming theoretical expectations.

The single quantum dot-laser: lasing and strong coupling in the high-excitation regime

The emission properties of a single quantum dot in a microcavity are studied on the basis of a semiconductor model. As a function of the pump rate of the system we investigate the onset of stimulated emission, the possibility to realize stimulated emission in the strong-coupling regime, as well as the excitation-dependent changes of the photon statistics and the emission spectrum. The role of possible excited charged and multi-exciton states, the different sources of dephasing for various quantum-dot transitions, and the influence of background emission into the cavity mode are analyzed in detail. In the strong coupling regime, the emission spectrum can contain a line at the cavity resonance in addition to the vacuum doublet caused by off-resonant transitions of the same quantum dot. If strong coupling persists in the regime of stimulated emission, the emission spectrum near the cavity resonance additionally grows due to broadened contributions from higher rungs of the Jaynes-Cummings ladder.

Exciton fission in monolayer transition metal dichalcogenide semiconductors

When electron-hole pairs are excited in a semiconductor, it is a priori not clear if they form a plasma of unbound fermionic particles or a gas of composite bosons called excitons. Usually, the exciton phase is associated with low temperatures. In atomically thin transition metal dichalcogenide semiconductors, excitons are particularly important even at room temperature due to strong Coulomb interaction and a large exciton density of states. Using state-of-the-art many-body theory, we show that the thermodynamic fission–fusion balance of excitons and electron-hole plasma can be efficiently tuned via the dielectric environment as well as charge carrier doping. We propose the observation of these effects by studying exciton satellites in photoemission and tunneling spectroscopy, which present direct solid-state counterparts of high-energy collider experiments on the induced fission of composite particles.Owing to their atomically thin nature, 2D transition metal dichalcogenides host room temperature, strongly bound excitons. Here, the authors show that the thermodynamical balance between fission and fusion of excitons can be tuned by the dielectric environment and charge carrier doping and observed by photoemission spectroscopy.

Monolithic ZnTe-based pillar microcavities containing CdTe quantum dots

Micropillars of different diameters have been prepared by focused ion beam milling out of a planar ZnTe-based cavity. The monolithic epitaxial structure, deposited on a GaAs substrate, contains CdTe quantum dots embedded in a ZnTe λ-cavity delimited by two distributed Bragg reflectors (DBRs). The high refractive index material of the DBR structure is ZnTe, while for the low index material a short-period triple MgTe/ZnTe/MgSe superlattice is used. The CdTe quantum dots are formed by a novel Zn-induced formation process and are investigated by scanning transmission electron microscopy. Micro-photoluminescence measurements show discrete optical modes for the pillars, in good agreement with calculations based on a vectorial transfer matrix method. The measured quality factor reaches a value of 3100.

Excitonic fine-structure splitting in telecom-wavelength InAs/GaAs quantum dots: Statistical distribution and height-dependence

The variation of the excitonic fine-structure splitting is studied for semiconductor quantum dots under the influence of a strain-reducing layer, utilized to shift the emission wavelength of the excitonic transition into the telecom-wavelength regime of 1.3–1.5 μm. By means of a sp3s*-tight-binding model and configuration interaction, we calculate wavelength shifts and fine-structure splittings for various quantum dot geometries. We find the splittings remaining small and even decreasing with strain-reducing layer composition for quantum dots with large height. Combined with an observed increased emission efficiency, the applicability for generation of entanglement photons is persistent.

Light-matter coupling in ZnTe-based micropillar cavities containing CdTe quantum dots

We study the coupling of CdTe quantum dots emission with ZnTe-based micropillar cavity modes. Nonresonant cavity mode feeding is reported together with an enhancement of the emission of a quantum dot thanks to resonant coupling with the cavity mode. The coupling is evidenced both in experiments with continuous and pulsed excitation. A theoretical Purcell factor is calculated and an experimental Purcell factor 5.7 is determined confirming the theoretical predictions. Additionally, we discuss the influence of the cascaded emission occurring under increased excitation power on the observed decay time of the excitonic transition.

Phonon-mediated off-resonant coupling effects in semiconductor quantum-dot lasers

The impact of non-resonant background emitters in semiconductor quantum-dot microcavity lasers is addressed within theoretical investigations based on the solution of the von Neumann equation. Off-resonant coupling between emitter resonances and the cavity mode is enabled via phonons, which are included in the von Neumann dynamics by an effective Lindblad contribution. The results show enhanced coherent emission from non-resonantly coupled quantum dots, while the frequently used phenomenological cavity feeding mechanism only enhances the thermal component of the emission.

Optical properties of InGaN quantum dots in monolithic pillar microcavities

The integration of InGaN quantum dots into GaN-based monolithic microcavities grown by metal-organic vapor-phase epitaxy is demonstrated. Microphotoluminescence spectra reveal distinct spectrally sharp emission lines around 2.73 eV, which can be attributed to the emission of single InGaN quantum dots. The samples are structured into airpost pillar microcavities. The longitudinal and transversal mode spectra of these cavities are in good agreement with theoretical calculations based on a vectorial transfer-matrix method. Quality factors up to Q=280 have been achieved.

The Dielectric Impact of Layer Distances on Exciton and Trion Binding Energies in van der Waals Heterostructures

The electronic and optical properties of monolayer transition-metal dichalcogenides (TMDs) and van der Waals heterostructures are strongly subject to their dielectric environment. In each layer, the field lines of the Coulomb interaction are screened by the adjacent material, which reduces the single-particle band gap as well as exciton and trion binding energies. By combining an electrostatic model for a dielectric heteromultilayered environment with semiconductor many-particle methods, we demonstrate that the electronic and optical properties are sensitive to the interlayer distances on the atomic scale. An analytic treatment is used to provide further insight into how the interlayer gap influences different excitonic transitions. Spectroscopical measurements in combination with a direct solution of a three-particle Schrödinger equation reveal trion binding energies that correctly predict recently measured interlayer distances and shed light on the effect of temperature annealing.