Matthias Lauermann

Silicon-Organic Hybrid Electro-Optical Devices

Organic materials combined with strongly guiding silicon waveguides open the route to highly efficient electro-optical devices. Modulators based on the so-called silicon-organic hybrid (SOH) platform have only recently shown frequency responses up to 100 GHz, high-speed operation beyond 112 Gbit/s with fJ/bit power consumption. In this paper, we review the SOH platform and discuss important devices such as Mach-Zehnder and IQ-modulators based on the linear electro-optic effect. We further show liquid-crystal phase-shifters with a voltage-length product as low as VπL = 0.06 V·mm and sub-μW power consumption as required for slow optical switching or tuning optical filters and devices.

High-Speed, Low Drive-Voltage Silicon-Organic Hybrid Modulator Based on a Binary-Chromophore Electro-Optic Material

We report on the hybrid integration of silicon-on-insulator slot waveguides with organic electro-optic materials. We investigate and compare a polymer composite, a dendron-based material, and a binary-chromophore organic glass (BCOG). A record-high in-device electro-optic coefficient of 230 pm/V is found for the BCOG approach resulting in silicon-organic hybrid Mach-Zehnder modulators that feature low UπL-products of down to 0.52 Vmm and support data rates of up to 40 Gbit/s.

Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) Integration

Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, reducing device footprint by more than an order of magnitude. However, neither silicon nor metals exhibit appreciable second-order optical nonlinearities, thereby making efficient electro-optic modulators challenging to realize. These deficiencies can be overcome by the concepts of silicon-organic hybrid (SOH) and plasmonic-organic hybrid integration, which combine SOI waveguides and plasmonic nanostructures with organic electro-optic cladding materials.

Low-power silicon-organic hybrid (SOH) modulators for advanced modulation formats

We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM) with high signal quality and record-low energy consumption. SOH integration combines highly efficient electro-optic organic materials with conventional silicon-on-insulator (SOI) slot waveguides, and allows to overcome the intrinsic limitations of silicon as an optical integration platform. We demonstrate QPSK and 16QAM signaling at symbol rates of 28 GBd with peak-to-peak drive voltages of 0.6 V(pp). For the 16QAM experiment at 112 Gbit/s, we measure a bit-error ratio of 5.1 × 10⁻⁵ and a record-low energy consumption of only 19 fJ/bit.

40 GBd 16QAM Signaling at 160 Gb/s in a Silicon-Organic Hybrid Modulator

We demonstrate for the first time generation of 16-state quadrature amplitude modulation (16QAM) signals at a symbol rate of 40 GBd using silicon-based modulators. Our devices exploit silicon-organic hybrid integration, which combines silicon-on-insulator slot waveguides with electro-optic cladding materials to realize highly efficient phase shifters. The devices enable 16QAM signaling and quadrature phase shift keying at symbol rates of 40 GBd and 45 GBd, respectively, leading to line rates of up to 160 Gb/s on a single wavelength and in a single polarization. This is the highest value demonstrated by a silicon-based device up to now. The energy consumption for 16QAM signaling amounts to less than 120 fJ/bit-one order of magnitude below that of conventional silicon photonic 16QAM modulators.

Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation

We determine the optical losses in gate-induced charge accumulation/inversion layers at a Si/SiO2 interface. Comparison between gate-induced charge layers and ion-implanted thin silicon films having an identical sheet resistance shows that optical losses can be significantly lower for gate-induced layers. For a given sheet resistance, holes produce higher optical loss than electrons. Measurements have been performed at λ = 1550 nm.

DAC-Less Amplifier-Less Generation and Transmission of QAM Signals Using Sub-Volt Silicon-Organic Hybrid Modulators

We demonstrate generation and transmission of optical signals by directly interfacing highly efficient silicon-organic hybrid (SOH) modulators to binary output ports of a field-programmable gate array. Using an SOH Mach-Zehnder modulator (MZM) and an SOH IQ modulator we generate ON-OFF-keying and binary phase-shift keying signals as well as quadrature phase-shift keying and 16-state quadrature amplitude modulation (16QAM) formats. Peak-to-peak voltages amount to only 0.27 Vpp for driving the MZM and 0.41 Vpp for the IQ modulator. Neither digital-to-analog converters nor drive amplifiers are required, and the RF energy consumption in the modulator amounts to record-low 18 fJ/bit for 16QAM signaling.

Lasing in silicon-organic hybrid waveguides.

Silicon photonics enables large-scale photonic–electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon–organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry.

Second-order nonlinear optical metamaterials: ABC-type nanolaminates

We demonstrate a concept for second-order nonlinear metamaterials that can be obtained from non-metallic centrosymmetric constituents with inherently low optical absorption. The concept is based on iterative atomic-layer deposition of three different materials, A = Al2O3, B = TiO2, and C = HfO2. The centrosymmetry of the resulting ABC stack is broken since the ABC and the inverted CBA sequences are not equivalent—a necessary condition for non-zero second-order nonlinearity. In our experiments, we find that the bulk second-order nonlinear susceptibility depends on the density of interfaces, leading to a nonlinear susceptibility of 0.26 pm/V at a wavelength of 800 nm. ABC-type nanolaminates can be deposited on virtually any substrate and offer a promising route towards engineering of second-order optical nonlinearities at both infrared and visible wavelengths.

100 Gbit/s OOK using a silicon-organic hybrid (SOH) modulator

We demonstrate a silicon-organic hybrid (SOH) Mach-Zehnder modulator suitable for 100 Gbit/s on-off keying (OOK) with peak-to-peak drive voltages of 1.4 V and energy consumption below 100 fJ/bit. Devices were fabricated using standard processes on a commercial silicon photonic platform.