Matthias Wuttig

Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements

Temperature dependent measurements of the electrical resistance have been employed to study structural changes in sputtered Ge2Sb2Te5 films. The pronounced changes of film resistance due to structural changes enable a precise determination of transition temperatures and activation energies. Furthermore the technique is sensitive enough to measure the influence of ultrathin capping layers on the transformation kinetics. With increasing temperature the Ge2Sb2Te5 films undergo a structural change from an amorphous to rock salt structure (Fm3m) around 140 °C and finally a hexagonal structure (p3m) around 310 °C. Both structural changes are accompanied by a major drop of resistance. Applying the Kissinger method [Anal. Chem. 29, 1702 (1957)] the activation energy for crystallization to the rock salt structure is determined to be 2.24±0.11 eV, and for the phase transformation to the hexagonal phase to be 3.64±0.19 eV, respectively. A thin capping layer of ZnS–SiO2 leads to an increase of the first transition t...

The effect of front ZnO:Al surface texture and optical transparency on efficient light trapping in silicon thin-film solar cells

This study addresses the material properties of magnetron-sputtered aluminum-doped zinc oxide (ZnO:Al) films and their application as front contacts in silicon thin-film solar cells. Optimized films exhibit high conductivity and transparency, as well as a surface topography with adapted light-scattering properties to induce efficient light trapping in silicon thin-film solar cells. We investigated the influence on the ZnO:Al properties of the amount of alumina in the target as well as the substrate temperature during sputter deposition. The alumina content in the target influences the carrier concentration leading to different conductivity and free carrier absorption in the near infrared. Additionally, a distinct influence on the film growth of the ZnO:Al layer was found. The latter affects the surface topography which develops during wet-chemical etching in diluted hydrochloric acid. Depending on alumina content in the target and heater temperature, three different regimes of etching behavior have been i...

Resonant bonding in crystalline phase-change materials.

The identification of materials suitable for non-volatile phase-change memory applications is driven by the need to find materials with tailored properties for different technological applications and the desire to understand the scientific basis for their unique properties. Here, we report the observation of a distinctive and characteristic feature of phase-change materials. Measurements of the dielectric function in the energy range from 0.025 to 3 eV reveal that the optical dielectric constant is 70-200% larger for the crystalline than the amorphous phases. This difference is attributed to a significant change in bonding between the two phases. The optical dielectric constant of the amorphous phases is that expected of a covalent semiconductor, whereas that of the crystalline phases is strongly enhanced by resonant bonding effects. The quantification of these is enabled by measurements of the electronic polarizability. As this bonding in the crystalline state is a unique fingerprint for phase-change materials, a simple scheme to identify and characterize potential phase-change materials emerges.

Formation of a well-ordered aluminium oxide overlayer by oxidation of NiAl(110)

We have investigated the electronic and geometric structure of a thin oxide film grown by oxidation on NiAl(110) using electron spectroscopic techniques, i.e., LEED, EELS, XPS and ARUPS. This film is inert to adsorption of, respectively reaction with many molecules up to temperatures of about 800 K. It is well ordered as deduced from the LEED pattern and covers the whole surface. We find that the oxide film is about 5 A thick, consisting of aluminium oxide as shown by EELS, XPS and ARUPS. It is most likely formed of two aluminium layers and two quasihexagonal oxygen layers with oxygen surface termination. Since the oxide film is rather thin it only shows a two-dimensional band structure which has been investigated using ARUPS. For the electronic levels of the oxide strong periodic dispersions are observed with bandwidths compatible to dispersion bandwidths calculated for the ΓX direction of α-Al2O3.

Disorder-induced localization in crystalline phase-change materials

Localization of charge carriers in crystalline solids has been the subject of numerous investigations over more than half a century. Materials that show a metal-insulator transition without a structural change are therefore of interest. Mechanisms leading to metal-insulator transition include electron correlation (Mott transition) or disorder (Anderson localization), but a clear distinction is difficult. Here we report on a metal-insulator transition on increasing annealing temperature for a group of crystalline phase-change materials, where the metal-insulator transition is due to strong disorder usually associated only with amorphous solids. With pronounced disorder but weak electron correlation, these phase-change materials form an unparalleled quantum state of matter. Their universal electronic behaviour seems to be at the origin of the remarkable reproducibility of the resistance switching that is crucial to their applications in non-volatile-memory devices. Controlling the degree of disorder in crystalline phase-change materials might enable multilevel resistance states in upcoming storage devices.

Nanosecond switching in GeTe phase change memory cells

The electrical switching behavior of GeTe-based phase change memory devices is characterized by time resolved experiments. SET pulses with a duration of less than 16 ns are shown to crystallize the material. Depending on the resistance of the RESET state, the minimum SET pulse duration can even be reduced down to 1 ns. This finding is attributed to the increasing impact of crystal growth upon decreasing switchable volume. Using GeTe or materials with similar crystal growth velocities, hence promises nonvolatile phase change memories with dynamic random access memorylike switching speeds.

Design Rules for Phase‐Change Materials in Data Storage Applications

Phase-change materials can rapidly and reversibly be switched between an amorphous and a crystalline phase. Since both phases are characterized by very different optical and electrical properties, these materials can be employed for rewritable optical and electrical data storage. Hence, there are considerable efforts to identify suitable materials, and to optimize them with respect to specific applications. Design rules that can explain why the materials identified so far enable phase-change based devices would hence be very beneficial. This article describes materials that have been successfully employed and dicusses common features regarding both typical structures and bonding mechanisms. It is shown that typical structural motifs and electronic properties can be found in the crystalline state that are indicative for resonant bonding, from which the employed contrast originates. The occurence of resonance is linked to the composition, thus providing a design rule for phase-change materials. This understanding helps to unravel characteristic properties such as electrical and thermal conductivity which are discussed in the subsequent section. Then, turning to the transition kinetics between the phases, the current understanding and modeling of the processes of amorphization and crystallization are discussed. Finally, present approaches for improved high-capacity optical discs and fast non-volatile electrical memories, that hold the potential to succeed present-days Flash memory, are presented.

Laser induced crystallization of amorphous Ge2Sb2Te5 films

The crystallization behavior of Ge2Sb2Te5 thin films has been analyzed by atomic force microscopy and optical reflection measurements on various time scales in order to determine the crystallization kinetics including the crystallization mechanism, the corresponding activation barrier, and the Avrami coefficient. On the minute time scale, thin amorphous films were isothermally crystallized in a furnace under a protective Ar atmosphere. From these measurements the activation energy for crystallization was determined to be (2.0±0.2) eV, in close agreement with previous studies using different techniques. The isothermal measurements also revealed a temperature dependent incubation time for the formation of critical nuclei, which is compared with recent theories. On the nanosecond time scale, Ge2Sb2Te5 was locally crystallized with a focused laser. Either crystalline spots of submicron size were generated in an as deposited amorphous film or amorphous bits in an otherwise crystalline film were recrystallized....

Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films

This study addresses the electrical and optical properties of radio frequency magnetron sputtered aluminum doped zinc oxide (ZnO:Al) films. The main focus was on the improvement in carrier mobility μ to achieve simultaneously high transparency for visible and particularly near-infrared light and low resistivity. The influence of Al concentration in the target, film thickness, sputter power, deposition pressure, and substrate temperature on material properties was investigated. The structural, compositional, electrical and optical properties were studied using x-ray diffraction, secondary ion mass spectrometry (SIMS), room temperature Hall effect measurements and spectral photometry, respectively. All ZnO:Al films were polycrystalline and preferentially oriented along [002]. The grain size along the direction of growth increased with higher Al doping and with increasing film thickness. The SIMS measurements revealed that the Al concentration in the film was nearly the same as in the target. Carrier concent...

Density changes upon crystallization of Ge2Sb2.04Te4.74 films

The density of sputtered Ge2Sb2.04Te4.74 thin films upon annealing has been precisely determined by x-ray reflection and compared to the values determined from x-ray diffraction (XRD) data. The film density increases in two steps around 130 and 280 °C upon annealing up to 400 °C. These increases are consequences of phase transitions from amorphous to NaCl type and from NaCl type to hexagonal structure, respectively, as revealed by XRD. Average density values of 5.87±0.02, 6.27±0.02, and 6.39±0.02 g/cm3 were measured for the amorphous, NaCl-type, and hexagonal phases, respectively. This corresponds to density changes upon crystallization of 6.8±0.2% and 8.8±0.2% for NaCl-type and hexagonal phases, respectively. The accompanying film thickness reductions were determined to be 6.5±0.2% and 8.2±0.2%, which compares very well with the density changes. The corresponding XRD values are determined to be 6.43–6.48 and 6.48 g/cm3 for NaCl-type and the hexagonal phases, respectively. This shows that nearly void-free...