Matthias Zilk

Second harmonic generation in free-standing lithium niobate photonic crystal L3 cavity

We report on second harmonic generation in a photonic crystal L3 cavity drilled in a thin self-suspended lithium niobate membrane. The cavity, resonant for the pump beam in the telecom wavelength range, exhibits a quality factor of around 500. Second harmonic generation has been measured with a low power continuous laser. A conversion efficiency of 6.4×10−9 has been estimated with an input coupled power of 53 μW.

The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

Black Silicon nanostructures are fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) in a gas mixture of SF6 and O2 at non-cryogenic temperatures. The structure evolution and the dependency of final structure geometry on the main processing parameters gas composition and working pressure are investigated and explained comprehensively. The optical properties of the produced Black Silicon structures, a distinct antireflection and light trapping effect, are resolved by optical spectroscopy and conclusively illustrated by optical simulations of accurate models of the real nanostructures. By that the structure sidewall roughness is found to be critical for an elevated reflectance of Black Silicon resulting from non-optimized etching processes. By analysis of a multitude of structures fabricated under different conditions, approximate limits for the range of feasible nanostructure geometries are derived. Finally, the technological applicability of Black Silicon fabrication by ICP-RIE is discussed.

Combining randomly textured surfaces and photonic crystals for the photon management in thin film microcrystalline silicon solar cells

Photon management aims at optimizing the solar cell efficiency by, e.g., incorporating supporting optical nanostructures for absorption enhancement. Their geometrical design, however, is usually a compromise since requirements in different spectral domains need to be accommodated. This issue can be mitigated if multiple optical nanostructures are integrated. Here, we present a photon management scheme that combines the benefits of a randomly textured surface and an opaline photonic crystal. Moreover, upon considering the device with an increasing complexity, we show that a structure that respects the mutual fabrication constraints has the best performance, i.e., a device where the photonic crystal is not perfect but to some extent amorphous as enforced by the presence of the texture.

Core-shell potassium niobate nanowires for enhanced nonlinear optical effects.

We demonstrate the synthesis as well as the optical characterization of core-shell nanowires. The wires consist of a potassium niobate (KNbO3) core and a gold shell. The nonlinear optical properties of the core are combined with the plasmonic resonance of the shell and offer an enhanced optical signal in the near infrared spectral range. We compare two different functionalization schemes of the core material prior to the shell growth process: silanization and polyelectrolyte. We show that the latter leads to a smoother and complete core-shell nanostructure and an easier-to-use synthesis process. A Mie-theory based theoretical approach is presented to model the enhanced second-harmonic generated (SHG) signal of the core-shell wires, illustrating the influence of the fabrication-induced varying geometrical factors of wire radius and shell thickness. A spectroscopic measurement on a core-shell nanowire shows a strong localized surface plasmon resonance close to 900 nm, which matches with the SHG resonance obtained from nonlinear optical experiments with the same nanowire. According to the simulation, this corresponds to a wire radius of 35 nm and a shell thickness of 7.5 nm. By comparing SHG signals measured from an uncoated nanowire and the coated one, we obtain a 250 times enhancement factor. This is less than the calculated enhancement, which considers a cylindrical nanowire with a perfectly smooth shell. Thus, we explain this discrepancy mainly with the roughness of the synthesized gold shell.

A path to implement optimized randomly textured surfaces for solar cells

Randomly textured surfaces are nowadays routinely integrated into solar cells. Nonetheless, their performance is still not optimal. This became obvious while comparing their performance to optimized surfaces. Thus far, however, these optimized surfaces suffer from being either impossible to implement or only with expensive top-down nanofabrication technologies not suitable for large scale wafers. Here, we suggest a different approach to achieve optimized randomly textured surfaces. It exploits a self-assembled monolayer of spheres with a carefully balanced size distribution to define the random texture. Existing solar cells are outperformed with such realistic textures by up to 26%.

Improvement of Ge-on-Si photodiodes by black silicon light trapping

A light-trapping scheme for normal incidence Ge-on-Si photodiodes, utilizing needle-like black silicon nanostructures is presented. Simulations reveal that light absorption in thin rear Ge films can be enhanced several times due to both the antireflection and the scattering effect of the nanostructure. It is shown that especially films with thicknesses ≤100 nm benefit from the black silicon nanostructure, e.g., resulting in a 5 to 10 times higher absorptance at 1500 nm for a 100 nm thick film. Theoretical predictions are experimentally proved by reflectance-transmittance measurements of crystalline Ge films sputtered on black silicon substrates.

A normal-incidence PtSi photoemissive detector with black silicon light-trapping

A normal-incidence light-trapping scheme relying on black silicon surface nanostructures for Si-based photoemissive detectors, operating in the IR spectral range, is proposed. An absorptance enhancement by a factor of 2–3 is demonstrated for technologically most relevant, ultrathin (2 nm–3 nm) PtSi rear layers on Si. It is shown that this increase can be translated into an equivalent increase in responsivity because of the absorption limitation of detector performance. Pd2Si/p-Si detectors with black silicon are suggested as promising candidates for room temperature detection in the third optical window with an expected external quantum efficiency in the range of 9%–14%.

Mode analysis of photonic crystal L3 cavities in self-suspended lithium niobate membranes

We report on a multimodal analysis of photonic crystal L3 cavities milled in lithium niobate free-standing membranes. The classical L3 cavity geometry is compared to an L3 cavity containing a second lattice superimposed on the primary one. Those two different geometries are investigated in terms of vertical radiation and quality (Q) factor for each mode of the cavities. Depending on the cavity geometry, some modes undergo an enhancement of their vertical radiation into small angles while other modes experience a higher Q factor. Experimental characterizations are corroborated by three-dimensional finite difference time domain simulations.

Ge-on-Si photodiode with black silicon boosted responsivity

Normal-incidence Ge-on-Si photodiodes with 300 nm thick intrinsic Ge absorber layer and black silicon light-trapping are fabricated and analyzed with regard to their responsivity. Compared to a standard Ge-on-Si photodiode without black silicon, the black silicon device exhibits a 3-times increased responsivity of 0.34 A/W at 1550 nm. By that, the problematic bandwidth-responsivity trade-off in ultrafast Ge-on-Si detectors can be widely overcome. The black silicon light-trapping structure can be applied to the device rear during back-end processing.

Influence of structure geometry on THz emission from Black Silicon surfaces fabricated by reactive ion etching

The influence of structure geometry on THz emission from Black Silicon (BS) surfaces fabricated by reactive ion etching (RIE) has been investigated by a comprehensive study including optical simulations, optical-pump THz probe and THz emission studies. A strong enhancement of THz emission is observed with increasing structure depth, which is mainly related to the increased number of carriers created within the silicon needles and not due to the overall absorption enhancement as previously claimed for silicon nanowires.