Máximo López

Self-Assembled InAs(N) Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (100)*

Alvaro Pulzara-Mora1, Juan Salvador Rojas-Ramirez2, Victor Hugo Mendez Garcia3, Jorge A. Huerta-Ruelas4, Julio Mendoza Alvarez2 and Maximo Lopez Lopez2 1Laboratorio de Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia Sede Manizales; 2Physics Department, Centro de Investigacion y Estudios Avanzados del IPN, Mexico D.F., Mexico; 3Coordinacion para la Innovacion y Aplicacion de la Ciencia y Tecnologia, Universidad Autonoma de San Luis Potosi, San Luis Potosi, S.L.P, Mexico 4Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Instituto Politecnico Nacional Cerro Blanco 141 Colinas del Cimatario Queretaro, Queretaro Mexico Mexico

Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [−5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.