Mazhar N. Ali

Large, non-saturating magnetoresistance in WTe2

Magnetoresistance is the change in a material’s electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors, in magnetic memory, and in hard drives at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures. Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe2: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe2, will represent a significant new direction in the study of magnetoresistivity.Magnetoresistance is the change of a material’s electrical resistance in response to an applied magnetic field. In addition to its intrinsic scientific interest, it is a technologically important property, placing it in “Pasteur’s quadrant” of res earch value: materials with large magnetorsistance have found use as magnetic sensors 1, in magnetic memory2, hard drives3, transistors4, and are the subject of frequent study in the field of spintronics5, 6. Here we report the observation of an extremely large one-dimensional posi tive magnetoresistance (XMR) in the layered transition metal dichalcogenide (TMD) WTe2; 452,700% at 4.5 Kelvin in a magnetic field of 14.7 Tesla, and 2.5 million% at 0.4 Kelvin in 45 Tesla, with no saturation. The XMR is highly anisotropic, maximized in the crystallographic direction where small pockets of holes and electrons are found in the electronic structure . The determination of the origin of this effect and the fabrication of nanostructures and devices based on the XMR of WTe2 will represent a significant new direction in the study and uses of magnetoresistivity.

Prediction of Weyl semimetal in orthorhombic MoTe2

We investigate the orthorhombic phase

Dirac cone protected by non-symmorphic symmetry and three-dimensional Dirac line node in ZrSiS

({T}_{d})

Superconductivity in Weyl semimetal candidate MoTe2

of the layered transition-metal dichalcogenide

The Crystal and Electronic Structures of Cd3As2, the Three-Dimensional Electronic Analogue of Graphene

{\mathrm{MoTe}}_{2}

Layer-dependent quantum cooperation of electron and hole states in the anomalous semimetal WTe2

as a Weyl semimetal candidate.

Correlation of crystal quality and extreme magnetoresistance of WTe2

{\mathrm{MoTe}}_{2}

Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

exhibits four pairs of Weyl points lying slightly above

Noncentrosymmetric superconductor with a bulk three-dimensional Dirac cone gapped by strong spin-orbit coupling

(\ensuremath{\sim}6\phantom{\rule{0.16em}{0ex}}\mathrm{meV})

Quantum criticality in a uniaxial organic ferroelectric

the Fermi energy in the bulk band structure. Different from its cousin