Mehrdad Shaygan

A Growth Mechanism for Free-Standing Vertical Graphene

We propose a detailed mechanism for the growth of vertical graphene by plasma-enhanced vapor deposition. Different steps during growth including nucleation, growth, and completion of the free-standing two-dimensional structures are characterized and analyzed by transmission electron microscopy. The nucleation of vertical graphene growth is either from the buffer layer or from the surface of carbon onions. A continuum model based on the surface diffusion and moving boundary (mass flow) is developed to describe the intermediate states of the steps and the edges of graphene. The experimentally observed convergence tendency of the steps near the top edge can be explained by this model. We also observed the closure of the top edges that can possibly stop the growth. This two-dimensional vertical growth follows a self-nucleated, step-flow mode, explained for the first time.

Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistors

A novel photosensitive hybrid field-effect transistor (FET) which consists of a multiple-shell of organic porphyrin film/oxide/silicon nanowires is presented. Due to the oxide shell around the nanowires, photoswitching of the current in the hybrid nanodevices is guided by the electric field effect, induced by charge redistribution within the organic film. This principle is an alternative to a photoinduced electron injection, valid for devices relying on direct junctions between organic molecules and metals or semiconductors. The switching dynamics of the hybrid nanodevices upon violet light illumination is investigated and a strong dependence on the thickness of the porphyrin film wrapping the nanowires is found. Furthermore, the thickness of the organic films is found to be a crucial parameter also for the switching efficiency of the nanowire FET, represented by the ratio of currents under light illumination (ON) and in dark conditions (OFF). We suggest a simple model of porphyrin film charging to explain the optoelectronic behavior of nanowire FETs mediated by organic film/oxide/semiconductor junctions.

Tuning the mechanical properties of vertical graphene sheets through atomic layer deposition.

We report the fabrication and characterization of graphene nanostructures with mechanical properties that are tuned by conformal deposition of alumina. Vertical graphene (VG) sheets, also called carbon nanowalls (CNWs), were grown on copper foil substrates using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique and conformally coated with different thicknesses of alumina (Al2O3) using atomic layer deposition (ALD). Nanoindentation was used to characterize the mechanical properties of pristine and alumina-coated VG sheets. Results show a significant increase in the effective Youngs modulus of the VG sheets with increasing thickness of deposited alumina. Deposition of only a 5 nm thick alumina layer on the VG sheets nearly triples the effective Youngs modulus of the VG structures. Both energy absorption and strain recovery were lower in VG sheets coated with alumina than in pure VG sheets (for the same peak force). This may be attributed to the increase in bending stiffness of the VG sheets and the creation of connections between the sheets after ALD deposition. These results demonstrate that the mechanical properties of VG sheets can be tuned over a wide range through conformal atomic layer deposition, facilitating the use of VG sheets in applications where specific mechanical properties are needed.

Enhancing the stiffness of vertical graphene sheets through ion beam irradiation and fluorination

Many applications of graphene can benefit from the enhanced mechanical robustness of graphene-based components. We report how the stiffness of vertical graphene (VG) sheets is affected by the introduction of defects and fluorination, both separately and combined. The defects were created using a high-energy ion beam while fluorination was performed in a XeF2 etching system. After ion bombardment alone, the average effective reduced modulus (E r), equal to ∼4.9 MPa for the as-grown VG sheets, approximately doubled to ∼10.0 MPa, while fluorination alone almost quadrupled it to ∼18.4 MPa. The maximum average E r of ∼32.4 MPa was achieved by repeatedly applying fluorination and ion bombardment. This increase can be explained by the formation of covalent bonds between the VG sheets due to ion bombardment, as well as the conversion from sp2 to sp3 and increased corrugation due to fluorination.

Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio

The fabrication and characterization of a field effect transistor using a radial core/shell structure based on ZnTe nanowires is reported here. The electronic and photoconductive performance of the devices is successfully controlled by tuning the shell to core ratios in the integrated devices. The ZnO shell around the ZnTe nanowire has a significant effect on the optical properties of the transistor, and the photo-to-dark current ratio, responsivity and photoconductive gain are greatly enhanced to 199, 196 and 8.12 × 104% respectively for the 17.5% shell/core ratio. The ability to control the core/shell ratio presented here is promising in device design for optoelectronic applications for covering a wide range of wavelengths.

Bandgap engineering of Cd(x)Zn(1-x)Te nanowires.

Bandgap engineering of single-crystalline alloy Cd(x)Zn(1-x)Te (0 ≤ x ≤ 1) nanowires is achieved successfully through control of growth temperature and a two zone source system in a vapor-liquid-solid process. Extensive characterization using electron microscopy, Raman spectroscopy and photoluminescence shows highly crystalline alloy nanowires with precise tuning of the bandgap. It is well known that bulk Cd(x)Zn(1-x)Te is popular for construction of radiation detectors and availability of a nanowire form of this material would help to improve detection sensitivity and miniaturization. This is a step forward towards the accomplishment of tunable and predetermined bandgap emissions for various applications.

High performance metal–insulator–graphene diodes for radio frequency power detection application

Vertical metal-insulator-graphene (MIG) diodes for radio frequency (RF) power detection are realized using a scalable approach based on graphene grown by chemical vapor deposition and TiO2 as barrier material. The temperature dependent current flow through the diode can be described by thermionic emission theory taking into account a bias induced barrier lowering at the graphene TiO2 interface. The diodes show excellent figures of merit for static operation, including high on-current density of up to 28 A cm-2, high asymmetry of up to 520, strong maximum nonlinearity of up to 15, and large maximum responsivity of up to 26 V-1, outperforming state-of-the-art metal-insulator-metal and MIG diodes. RF power detection based on MIG diodes is demonstrated, showing a responsivity of 2.8 V W-1 at 2.4 GHz and 1.1 V W-1 at 49.4 GHz.

Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal

The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the direct measurement using Kelvin Probe Force Microscopy demonstrates a very low width specific contact resistance.

Zero-bias, 50 dB dynamic range, V-band power detector based on CVD graphene-on-glass

In this paper we report a compact, zero-biased Graphene-based power detector circuit based on our in-house metal-insulator-Graphene (MIG) diode fabricated on glass substrate. The designed circuit is optimized for the frequency band 40–75 GHz. Measurements show dynamic range of more than 50 dB with down to −50 dBm sensitivity. The measured responsivity for the fabricated circuit on glass is 168 V/W at 2.5 GHz and it reaches 15 V/W at 60 GHz without calibration for substrate losses. Measurement results together with the introduced CVD Graphene process promote the proposed circuit and device for repeatable, statistically stable millimeter-wave and sub-millimeter wave circuits applications.

Toward Highly Sensitive and Energy Efficient Ammonia Gas Detection with Modified Single-Walled Carbon Nanotubes at Room Temperature

Fabrication and comparative analysis of the gas sensing devices based on individualized single-walled carbon nanotubes of four different types (pristine, boron doped, nitrogen doped, and semiconducting ones) for detection of low concentrations of ammonia is presented. The comparison of the detection performance of different devices, in terms of resistance change under exposure to ammonia at low concentrations combined with the detailed analysis of chemical bonding of dopant atoms to nanotube walls sheds light on the interaction of NH3 with carbon nanotubes. Furthermore, chemoresistive measurements showed that the use of semiconducting nanotubes as conducting channels leads to the highest sensitivity of devices compared to the other materials. Electrical characterization and analysis of the structure of fabricated devices showed a close relation between amount and quality of the distribution of deposited nanotubes and their sensing properties. All measurements were performed at room temperature, and the power consumption of gas sensing devices was as low as 0.6 μW. Finally, the route toward an optimal fabrication of nanotube-based sensors for the reliable, energy-efficient sub-ppm ammonia detection is proposed, which matches the pave of advent of future applications.