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Featured researches published by Meiyue Liu.


Advanced Materials | 2017

High-Performance Color-Tunable Perovskite Light Emitting Devices through Structural Modulation from Bulk to Layered Film

Ziming Chen; Chongyang Zhang; Xiao-Fang Jiang; Meiyue Liu; Ruoxi Xia; Tingting Shi; Dongcheng Chen; Qifan Xue; Yu-Jun Zhao; Shi-Jian Su; Hin-Lap Yip; Yong Cao

Adding 2-phenoxyethylamine (POEA) into a CH3 NH3 PbBr3 precursor solution can modulate the organic-inorganic hybrid perovskite structure from bulk to layered, with a photoluminescence and electroluminescence shift from green to blue. Meanwhile, POEA can passivate the CH3 NH3 PbBr3 surface and help to obtain a pure CH3 NH3 PbBr3 phase, leading to an improvement of the external quantum efficiency to nearly 3% in CH3 NH3 PbBr3 LED.


Journal of Materials Chemistry | 2017

Fabrication of high-performance and low-hysteresis lead halide perovskite solar cells by utilizing a versatile alcohol-soluble bispyridinium salt as an efficient cathode modifier

Guiting Chen; Fan Zhang; Meiyue Liu; Jun Song; Jiarong Lian; Pengju Zeng; Hin-Lap Yip; Wei Yang; Bin Zhang; Yong Cao

A novel alcohol-soluble conjugated bispyridinium salt (FPyBr) is developed and used as a cathode modifier to improve the cathode interface of planar heterojunction perovskite solar cells (PHJ PVSCs). The excellent electron-withdrawing ability of bispyridinium rings endows FPyBr with a favorable energy level alignment with phenyl-C60-butyric acid methyl ester (PCBM) and the cathode (e.g., Al), which leads to an ideal ohmic contact and efficient electron transport and collection. The deep-lying highest occupied molecular orbital energy level of FPyBr can also effectively block hole carriers and thus decrease leakage current and hole–electron recombination at the cathode interface. In addition, FPyBr can n-dope PCBM through an anion-induced electron transfer process, which increases the electron mobility of PCBM drastically, thereby diminishing interfacial resistance and promoting electron transport. As a result, by incorporating an FPyBr cathode interlayer with ethanol solvent, high-performance and low-hysteresis PHJ PVSCs with a maximal power conversion efficiency (PCE) of 19.61% can be realized. In contrast, reference devices without any cathode interlayer display a distinctly worse performance, with a PCE of 16.97%. Therefore, this excellent cathode modifier provides a new opportunity to fabricate high performance multilayer PVSCs using low-temperature solution processing without interfacial erosion/mixing.


Journal of Materials Chemistry | 2017

Effects of organic cations on the defect physics of tin halide perovskites

Tingting Shi; Hai-Shan Zhang; Weiwei Meng; Qiang Teng; Meiyue Liu; Xiaobao Yang; Yanfa Yan; Hin-Lap Yip; Yu-Jun Zhao

Tin (Sn) halide perovskite absorbers have attracted much interest because of their nontoxicity as compared to their lead (Pb) halide perovskite counterparts. Recent progress shows that the power conversion efficiency of FASnI3 (FA = HC(NH2)2) solar cells prevails over that of MASnI3 (MA = CH3NH3). In this paper, we show that the organic cations, i.e., FA and MA, play a vital role in the defect properties of Sn halide perovskites. The antibonding coupling between Sn-5s and I-5p is clearly weaker in FASnI3 than in MASnI3 due to the larger ionic size of FA, leading to higher formation energies of Sn vacancies in FASnI3. Subsequently, the conductivity of FASnI3 can be tuned from p-type to intrinsic by varying the growth conditions of the perovskite semiconductor; in contrast, MASnI3 shows unipolar high p-type conductivity independent of the growth conditions. This provides a reasonable explanation for the better performance of FASnI3-based solar cells in experiments with respect to the MASnI3-based solar cells.


Advanced Materials | 2018

Interface Engineering for All‐Inorganic CsPbI2Br Perovskite Solar Cells with Efficiency over 14%

Lei Yan; Qifan Xue; Meiyue Liu; Zonglong Zhu; Jingjing Tian; Zhenchao Li; Zhen Chen; Ziming Chen; He Yan; Hin-Lap Yip; Yong Cao

In this work, a SnO2 /ZnO bilayered electron transporting layer (ETL) aimed to achieve low energy loss and large open-circuit voltage (Voc ) for high-efficiency all-inorganic CsPbI2 Br perovskite solar cells (PVSCs) is introduced. The high-quality CsPbI2 Br film with regular crystal grains and full coverage can be realized on the SnO2 /ZnO surface. The higher-lying conduction band minimum of ZnO facilitates desirable cascade energy level alignment between the perovskite and SnO2 /ZnO bilayered ETL with superior electron extraction capability, resulting in a suppressed interfacial trap-assisted recombination with lower charge recombination rate and greater charge extraction efficiency. The as-optimized all-inorganic PVSC delivers a high Voc of 1.23 V and power conversion efficiency (PCE) of 14.6%, which is one of the best efficiencies reported for the Cs-based all-inorganic PVSCs to date. More importantly, decent thermal stability with only 20% PCE loss is demonstrated for the SnO2 /ZnO-based CsPbI2 Br PVSCs after being heated at 85 °C for 300 h. These findings provide important interface design insights that will be crucial to further improve the efficiency of all-inorganic PVSCs in the future.


Journal of Materials Chemistry | 2018

High performance low-bandgap perovskite solar cells based on a high-quality mixed Sn–Pb perovskite film prepared by vacuum-assisted thermal annealing

Meiyue Liu; Ziming Chen; Qifan Xue; Sin Hang Cheung; S. K. So; Hin-Lap Yip; Yong Cao

Tandem perovskite solar cells are an effective concept to overcome the Shockley–Queisser limit of a single-junction perovskite solar cell. For a high-performance tandem cell, besides a wide-bandgap perovskite top cell, a high-quality low-bandgap perovskite bottom cell with an optimum bandgap of ∼1.2 eV is urgently needed. Moreover, a simple process technique needs to be developed for a high-quality perovskite film with good reproducibility, in order to further simplify the whole tandem-cell fabrication. Accordingly, we develop a simple one-step process (vacuum-assisted thermal annealing) for a high-quality low-bandgap CH3NH3Sn0.5Pb0.5IxCl3−x film, where the absorption edge can exceed 1000 nm. After comparing CH3NH3Sn0.5Pb0.5IxCl3−x films annealed in a vacuum and in a nitrogen environment, we find that vacuum-assisted thermal annealing can result in CH3NH3Sn0.5Pb0.5IxCl3−x films with better film coverage and crystallinity. This process can also accelerate the sublimation of methylammonium chloride and reduce the trap density in the CH3NH3Sn0.5Pb0.5IxCl3−x film. With this process, we successfully fabricated an efficient low-bandgap perovskite solar cell with a power conversion efficiency of more than 12% and good device reproducibility as well as long-term stability.


Advanced Materials | 2018

Recombination Dynamics Study on Nanostructured Perovskite Light-Emitting Devices

Ziming Chen; Zhenchao Li; Chongyang Zhang; Xiao-Fang Jiang; Dongcheng Chen; Qifan Xue; Meiyue Liu; Shi-Jian Su; Hin-Lap Yip; Yong Cao

The field of organic-inorganic hybrid perovskite light-emitting diodes (PeLEDs) has developed rapidly in recent years. Although the performance of PeLEDs continues to improve through film quality control and device optimization, little research has been dedicated to understanding the recombination dynamics in perovskite thin films. Likewise, little has been done to investigate the effects of recombination dynamics on the overall light-emitting behavior of PeLEDs. Therefore, this study investigates the recombination dynamics of CH3 NH3 PbI3 thin films with differing crystal sizes by measurement of fluence-dependent transient absorption dynamics and time-resolved photoluminescence. The aim is to find out the link between recombination dynamics and device behavior in PeLEDs. It is found that bimolecular and Auger recombination become more efficient as the crystal size decreases and monomolecular recombination rate is affected by the trap density of perovskite. By defining the radiative efficiency Φ(n), which relates to the monomolecular, bimolecular, and Auger recombination, the fundamental recombination properties of CH3 NH3 PbI3 films are discerned in quantitative terms. These findings help us to understand the light emission behavior of PeLEDs. This study takes an important step toward establishing the relationship between film structure, recombination dynamics, and device behavior for PeLEDs, thereby providing useful insights toward the design of better perovskite devices.


Advanced Energy Materials | 2016

Improving Film Formation and Photovoltage of Highly Efficient Inverted‐Type Perovskite Solar Cells through the Incorporation of New Polymeric Hole Selective Layers

Qifan Xue; Guiting Chen; Meiyue Liu; Jingyang Xiao; Ziming Chen; Zhicheng Hu; Xiao-Fang Jiang; Bin Zhang; Fei Huang; Wei Yang; Hin-Lap Yip; Yong Cao


Advanced Energy Materials | 2017

Dual Interfacial Modifications Enable High Performance Semitransparent Perovskite Solar Cells with Large Open Circuit Voltage and Fill Factor

Qifan Xue; Yang Bai; Meiyue Liu; Ruoxi Xia; Zhicheng Hu; Ziming Chen; Xiao-Fang Jiang; Fei Huang; Shihe Yang; Yutaka Matsuo; Hin-Lap Yip; Yong Cao


Advanced Energy Materials | 2017

Poly(3,4-Ethylenedioxythiophene): Methylnaphthalene Sulfonate Formaldehyde Condensate: The Effect of Work Function and Structural Homogeneity on Hole Injection/Extraction Properties

Y.Y. Li; Meiyue Liu; Yuan Li; Kai Yuan; Lijia Xu; Wei Yu; Runfeng Chen; Xueqing Qiu; Hin-Lap Yip


Advanced Functional Materials | 2018

Efficient and Stable Perovskite Solar Cells via Dual Functionalization of Dopamine Semiquinone Radical with Improved Trap Passivation Capabilities

Qifan Xue; Meiyue Liu; Zhenchao Li; Lei Yan; Zhicheng Hu; Jiawen Zhou; Wenqiang Li; Xiao-Fang Jiang; Baomin Xu; Fei Huang; Yuan Li; Hin-Lap Yip; Yong Cao

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Hin-Lap Yip

South China University of Technology

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Yong Cao

South China University of Technology

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Qifan Xue

South China University of Technology

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Ziming Chen

South China University of Technology

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Xiao-Fang Jiang

South China University of Technology

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Fei Huang

South China University of Technology

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Zhicheng Hu

South China University of Technology

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Ruoxi Xia

South China University of Technology

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Yuan Li

South China University of Technology

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Zhenchao Li

South China University of Technology

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