Melanie Timpel

Energy-Level Engineering at ZnO/Oligophenylene Interfaces with Phosphonate-Based Self-Assembled Monolayers.

We used aromatic phosphonates with substituted phenyl rings with different molecular dipole moments to form self-assembled monolayers (SAMs) on the Zn-terminated ZnO(0001) surface in order to engineer the energy-level alignment at hybrid inorganic/organic semiconductor interfaces, with an oligophenylene as organic component. The work function of ZnO was tuned over a wide range of more than 1.7 eV by different SAMs. The difference in the morphology and polarity of the SAM-modified ZnO surfaces led to different oligophenylene orientation, which resulted in an orientation-dependent ionization energy that varied by 0.7 eV. The interplay of SAM-induced work function modification and oligophenylene orientation changes allowed tuning of the offsets between the molecular frontier energy levels and the semiconductor band edges over a wide range. Our results demonstrate the versatile use of appropriate SAMs to tune the energy levels of ZnO-based hybrid semiconductor heterojunctions, which is important to optimize its function, e.g., targeting either interfacial energy- or charge-transfer.

Tuning the Electronic Structure of Graphene by Molecular Dopants: Impact of the Substrate

A combination of ultraviolet and X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, and first principle calculations was used to study the electronic structure at the interface between the strong molecular acceptor 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (F6TCNNQ) and a graphene layer supported on either a quartz or a copper substrate. We find evidence for fundamentally different charge redistribution mechanisms in the two ternary systems, as a consequence of the insulating versus metallic character of the substrates. While electron transfer occurs exclusively from graphene to F6TCNNQ on the quartz support (p-doping of graphene), the Cu substrate electron reservoir induces an additional electron density flow to graphene decorated with the acceptor monolayer. Remarkably, graphene on Cu is n-doped and remains n-doped upon F6TCNNQ deposition. On both substrates, the work function of graphene increases substantially with a F6TCNNQ monolayer atop, the effect being more pronounced (∼1.3 eV) on Cu compared to quartz (∼1.0 eV) because of the larger electrostatic potential drop associated with the long-distance graphene-mediated Cu-F6TCNNQ electron transfer. We thus provide a means to realize high work function surfaces for both p- and n-type doped graphene.

Polarity of pulsed laser deposited ZnO nanostructures

ZnO nanostructures were grown by pulsed laser deposition on planar ZnO with different surface polarities. While for planar layers of pulsed laser deposited ZnO polarity control is feasible, the polarity relation of ZnO nanostructures to their substrate layers is not yet investigated. Depending on the polarity of the nucleation layer, two distinct morphologies were found, namely, nanorods on O-polar and nanowalls on Zn-polar ZnO. Convergent beam electron diffraction was performed to reveal the polarity of the ZnO nanostructures. The evolution of ZnO nanostructures is described in terms of a growth rate and a surface diffusion model.

Publisher Correction: Collective molecular switching in hybrid superlattices for light-modulated two-dimensional electronics

The original version of this article incorrectly listed an affiliation of Sara Bonacchi as ‘Present address: Institut National de la Recherche Scientifique (INRS), EMT Center, Boulevard Lionel-Boulet, Varennes, QC, J3X 1S2, 1650, Canada’, instead of the correct ‘Present address: Department of Chemical Sciences - University of Padua - Via Francesco Marzolo 1 - 35131 Padova - Italy’. And an affiliation of Emanuele Orgiu was incorrectly listed as ‘Present address: Department of Chemical Sciences, University of Padua, Via Francesco Marzolo 1, Padova, 35131, Italy’, instead of the correct ‘Present address: Institut National de la Recherche Scientifique (INRS), EMT Center, Boulevard Lionel-Boulet, Varennes, QC, J3X 1S2, 1650, Canada’. This has been corrected in both the PDF and HTML versions of the article.

Collective molecular switching in hybrid superlattices for light-modulated two-dimensional electronics

Molecular switches enable the fabrication of multifunctional devices in which an electrical output can be modulated by external stimuli. The working mechanism of these devices is often hard to prove, since the molecular switching events are only indirectly confirmed through electrical characterization, without real-space visualization. Here, we show how photochromic molecules self-assembled on graphene and MoS2 generate atomically precise superlattices in which a light-induced structural reorganization enables precise control over local charge carrier density in high-performance devices. By combining different experimental and theoretical approaches, we achieve exquisite control over events taking place from the molecular level to the device scale. Unique device functionalities are demonstrated, including the use of spatially confined light irradiation to define reversible lateral heterojunctions between areas possessing different doping levels. Molecular assembly and light-induced doping are analogous for graphene and MoS2, demonstrating the generality of our approach to optically manipulate the electrical output of multi-responsive hybrid devices.Photochromic molecules offer the unique opportunity to demonstrate multifunctional devices with light-tunable electrical characteristics. Gobbi et al. build light-switchable electronic heterojunctions based on atomically precise, photo-reversible molecular superlattices on graphene and MoS2.

Versatile and Scalable Strategy To Grow Sol–Gel Derived 2H-MoS2 Thin Films with Superior Electronic Properties: A Memristive Case

Transition metal dichalcogenides, such as molybdenum disulfide (MoS2), show peculiar chemical/physical properties that enable their use in applications ranging from micro- and nano-optoelectronics to surface catalysis, gas and light detection, and energy harvesting/production. One main limitation to fully harness the potential of MoS2 is given by the lack of scalable and low environmental impact synthesis of MoS2 films with high uniformity, hence setting a significant challenge for industrial applications. In this work, we develop a versatile and scalable sol-gel-derived MoS2 film fabrication by spin coating deposition of an aqueous sol on different technologically relevant, flexible substrates with annealing at low temperatures (300 °C) and without the need of sulfurization and/or supply of hydrogen as compared to cutting-edge techniques. The electronic and physical properties of the MoS2 thin films were extensively investigated by means of surface spectroscopy and structural characterization techniques. Spatially homogenous nanocrystalline 2H-MoS2 thin films were obtained exhibiting high chemical purity and excellent electronic properties such as an energy band gap of 1.35 eV in agreement with the 2H phase of the MoS2, and a density of states that corresponds to the n-type character expected for high-quality 2H-MoS2. The potential use of sol-gel-grown MoS2 as the candidate material for electronic applications was tested via electrical characterization and demonstrated via the reversible switching in resistivity typical for memristors with a measured ON-OFF ratio ≥102. The obtained results highlight that the novel low-cost fabrication method has a great potential to promote the use of high-quality MoS2 in technological and industrial-relevant scalable applications.