Mengliang Yao

n-type thermoelectric material Mg2Sn0.75Ge0.25 for high power generation

Significance Thermoelectric materials have been extensively studied for applications in conversion of waste heat into electricity. The efficiency is related to the figure-of-merit, ZT = (S2σ/κ)T, where S, σ, and κ are the Seebeck coefficient, electrical conductivity, and thermal conductivity, respectively. Pursuing higher ZT for higher efficiency has been the focus by mainly reducing the thermal conductivity. In this paper, we point out, for a given ZT, higher power factor (S2σ) should be pursued for achieving more power because power is determined by (Th − Tc)2(S2σ)/L, where Th, Tc, and L are the hot and cold side temperatures, and leg length, respectively. We found a new material, Mg2Sn0.75Ge0.25, having both high ZT and high power factor. Thermoelectric power generation is one of the most promising techniques to use the huge amount of waste heat and solar energy. Traditionally, high thermoelectric figure-of-merit, ZT, has been the only parameter pursued for high conversion efficiency. Here, we emphasize that a high power factor (PF) is equivalently important for high power generation, in addition to high efficiency. A new n-type Mg2Sn-based material, Mg2Sn0.75Ge0.25, is a good example to meet the dual requirements in efficiency and output power. It was found that Mg2Sn0.75Ge0.25 has an average ZT of 0.9 and PF of 52 μW⋅cm−1⋅K−2 over the temperature range of 25–450 °C, a peak ZT of 1.4 at 450 °C, and peak PF of 55 μW⋅cm−1⋅K−2 at 350 °C. By using the energy balance of one-dimensional heat flow equation, leg efficiency and output power were calculated with Th = 400 °C and Tc = 50 °C to be of 10.5% and 6.6 W⋅cm−2 under a temperature gradient of 150 °C⋅mm−1, respectively.

Influence of Electron Doping on the Ground State of (Sr1-xLax)2IrO4

The evolution of the electronic properties of electron-doped (Sr1-xLax)2IrO4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0:02 and charge transport remains percolative up to the limit of La substitution (x =0:06). In particular, the electronic ground state remains inhomogeneous even beyond the collapse of the parent states long-range antiferromagnetic order, while persistent short-range magnetism survives up to the highest La-substitution levels. Furthermore, as electrons are doped into Sr2IrO4, we observe the appearance of a low temperature magnetic glass-like state intermediate to the complete suppression of antiferromagnetic order. Universalities and di erences in the electron-doped phase diagrams of single layer and bilayer Ruddlesden-Popper strontium iridates are discussed.

Induced electronic anisotropy in bismuth thin films

We use magneto-resistance measurements to investigate the effect of texturing in polycrystalline bismuth thin films. Electrical current in bismuth films with texturing such that all grains are oriented with the trigonal axis normal to the film plane is found to flow in an isotropic manner. By contrast, bismuth films with no texture such that not all grains have the same crystallographic orientation exhibit anisotropic current flow, giving rise to preferential current flow pathways in each grain depending on its orientation. Extraction of the mobility and the phase coherence length in both types of films indicates that carrier scattering is not responsible for the observed anisotropic conduction. Evidence from control experiments on antimony thin films suggests that the anisotropy is a result of bismuths large electron effective mass anisotropy.

Experimental determination of phonon thermal conductivity and Lorenz ratio of single crystal metals: Al, Cu, and Zn

We use a magnetothermal resistance method to measure lattice thermal conductivity of pure single crystal metals over the intermediate temperature range of 5–60 K. Large transverse magnetic fields are applied to suppress electronic thermal conduction. The total thermal conductivity and the electrical conductivity are measured as functions of applied magnetic field. The lattice thermal conductivity is then extracted by extrapolating the thermal conductivity versus electrical conductivity curve at zero electrical conductivity. We used this method to experimentally measure the lattice thermal conductivity and Lorenz number in single crystal Al (100), Cu (100), and Zn (001) in the intermediate temperature range. Our results show that the measured phonon thermal conductivity versus temperature plot has a peak around ΘD/10, and the Lorenz number is found to deviate from the Sommerfeld value in the intermediate temperature range.

Experimental determination of phonon thermal conductivity and Lorenz ratio of single-crystal bismuth telluride

We use a magnetothermal resistance method to measure the lattice thermal conductivity of a single crystal of Bi

Enhancement of Thermoelectric Performance of n-Type PbSe by Cr Doping with Optimized Carrier Concentration

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Bi2S3 nanonetwork as precursor for improved thermoelectric performance

Te

Enhancement of thermoelectric performance in n-type PbTe 1−y Se y by doping Cr and tuning Te:Se ratio

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Increased thermoelectric performance by Cl doping in nanostructured AgPb18SbSe20-xClx

from 5 to 60 K. We apply a large transverse magnetic field to suppress the electronic thermal conduction while measuring thermal conductivity and electrical resistivity. The lattice thermal conductivity is then calculated by extrapolating the thermal conductivity versus electrical conductivity curve to a zero electrical conductivity value. Our results show that the measured phonon thermal conductivity follows the

Low temperature thermoelectric properties of p-type copper selenide with Ni, Te and Zn dopants

e^{({\Delta}_{min}/T)}