Mengyuan Li

The negative piezoelectric effect of the ferroelectric polymer poly(vinylidene fluoride)

Piezoelectricity describes interconversion between electrical charge and mechanical strain. As expected for lattice ions displaced in an electric field, the proportionality constant is positive for all piezoelectric materials. The exceptions are poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (P(VDF-TrFE)), which exhibit a negative longitudinal piezoelectric coefficient. Reported explanations exclusively consider contraction with applied electric field of either the crystalline or the amorphous part of these semi-crystalline polymers. To distinguish between these conflicting interpretations, we have performed in situ dynamic X-ray diffraction measurements on P(VDF-TrFE) capacitors. We find that the piezoelectric effect is dominated by the change in lattice constant but, surprisingly, it cannot be accounted for by the polarization-biased electrostrictive contribution of the crystalline part alone. Our quantitative analysis shows that an additional contribution is operative, which we argue is due to an electromechanical coupling between the intermixed crystalline lamellae and amorphous regions. Our findings tie the counterintuitive negative piezoelectric response of PVDF and its copolymers to the dynamics of their composite microstructure.

Organic ferroelectric opto-electronic memories

Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this area with a focus on the most promising opto-electronic device concept, i.e., bistable rectifying diodes. The integration of these diodes into larger memory arrays is discussed. Through a clever design of the electrodes we demonstrate light emitting diodes with integrated built-in switches that can be applied in signage applications.

Crossbar memory array of organic bistable rectifying diodes for nonvolatile data storage

Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A logic table of a 4-bit memory and integration into a 3×3 cross bar array are demonstrated. The most difficult state, a high resistance bit completely surrounded by low resistance bits could be unambiguously identified.

Polarization fatigue of organic ferroelectric capacitors

The polarization of the ferroelectric polymer P(VDF-TrFE) decreases upon prolonged cycling. Understanding of this fatigue behavior is of great technological importance for the implementation of P(VDF-TrFE) in random-access memories. However, the origin of fatigue is still ambiguous. Here we investigate fatigue in thin-film capacitors by systematically varying the frequency and amplitude of the driving waveform. We show that the fatigue is due to delamination of the top electrode. The origin is accumulation of gases, expelled from the capacitor, under the impermeable top electrode. The gases are formed by electron-induced phase decomposition of P(VDF-TrFE), similar as reported for inorganic ferroelectric materials. When the gas barrier is removed and the waveform is adapted, a fatigue-free ferroelectric capacitor based on P(VDF-TrFE) is realized. The capacitor can be cycled for more than 108 times, approaching the programming cycle endurance of its inorganic ferroelectric counterparts.

Low voltage extrinsic switching of ferroelectric delta-PVDF ultra-thin films

Non-volatile memories operating at low voltage are indispensable for flexible micro-electronic applications. To that end, ferroelectric δ-PVDF films were investigated as a function of layer thickness down to 10 nm ultra-thin films. Capacitors were fabricated using PEDOT:PSS as non-reactive electrode. Full polarization reversal was obtained at an unprecedented voltage below 5 V. The remanent polarization of 7 μC/cm2 and coercive field of 120 MV/m are independent of layer thickness, demonstrating that ferroelectric switching in δ-PVDF is extrinsic, dominated by inhomogeneous nucleation and growth. The ease of processing of δ-PVDF allowed to determine a lower limit of the critical ferroelectric thickness.

Controlling the on/off current ratio of ferroelectric field-effect transistors

The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memory functionality and the second, non-ferroelectric, control gate is advantageously used to set the threshold voltage. The on/off ratio can thus be maximized at the readout bias. The operation is explained by the quantitative analysis of charge transport in a dual-gate FeFET.

Angle-resolved photoemission spectroscopy with 9-eV photon-energy pulses generated in a gas-filled hollow-core photonic crystal fiber

A recently developed source of ultraviolet radiation, based on optical soliton propagation in a gas-filled hollow-core photonic crystal fiber, is applied here to angle-resolved photoemission spectroscopy (ARPES). Near-infrared femtosecond pulses of only few μJ energy generate vacuum ultraviolet radiation between 5.5 and 9 eV inside the gas-filled fiber. These pulses are used to measure the band structure of the topological insulator Bi2Se3 with a signal to noise ratio comparable to that obtained with high order harmonics from a gas jet. The two-order-of-magnitude gain in efficiency promises time-resolved ARPES measurements at repetition rates of hundreds of kHz or even MHz, with photon energies that cover the first Brillouin zone of most materials.