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Dive into the research topics where Michael C. Staggs is active.

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Featured researches published by Michael C. Staggs.


Applied Physics Letters | 1998

Raman scattering investigation of KH2PO4 subsequent to high fluence laser irradiation

Stavros G. Demos; M. Yan; Michael C. Staggs; J. J. De Yoreo; H. B. Radousky

The spectral characteristics of the internal (PO4 tetrahedron) modes of fast-grown KH2PO4 crystals under sub-damage threshold, 10 ns, 355 nm laser irradiation have been investigated. Pump-and-probe Raman spectroscopy indicates transient changes of the intensity of the 915 cm−1, –PO4 internal mode. This change is attributed to a transient increase of the absorption due to generation by the 355 nm pump pulse of electronic defects in the bulk of the crystal.


32nd Annual Boulder Damage Symposium - Laser-Induced Damaged in Optical Materials: 2000 | 2001

Mechanisms to explain damage growth in optical materials

Stavros G. Demos; Mark R. Kozlowski; Michael C. Staggs; L. L. Chase; Alan K. Burnham; H. B. Radousky

Damage growth in optical materials used in large aperture laser systems is an issue of great importance when determining component lifetime and therefore cost of operation. Understanding the mechanisms and photophysical processes associated with damage growth are important in order to devise mitigation techniques. In this work we examined plasma-modified material and cracks for their correlation to damage growth on fused silica and DKDP samples. We employ an in-situ damage testing optical microscope that allows the acquisition of light scattering and fluorescence images of the area of interest prior to, and following exposure to a high fluence, 355-nm, 3-ns laser pulse. In addition, high-resolution images of the damage event are recorded using the associated plasma emission. Experimental results indicate that both aforementioned features can initiate plasma formation at fluences as low as 2 J/cm2. The intensity of the recorded plasma emission remains low for fluences up to approximately 5 J/cm2 but rapidly increases thereafter. Based on the experimental results, we propose as possible mechanisms leading to damage growth the initiation of avalanche ionization by defects at the damage modified material and presence of field intensification due to cracks.


Laser-Induced Damage in Optical Materials: 2001 | 2002

Engineered defects for investigation of laser-induced damage of fused silica at 355 nm

Alex V. Hamza; Wigbert J. Siekhaus; Alexander M. Rubenchik; Michael D. Feit; L. L. Chase; Michael R. Savina; Michael J. Pellin; Ian D. Hutcheon; Mike C. Nostrand; Michael J. Runkel; Bill W. Choi; Michael C. Staggs; M.J. Fluss

Embedded gold and mechanical deformation in silica were used to investigate initiation of laser-induced damage at 355 nm (7.6 ns). The nanoparticle-covered surfaces were coated with between 0 and 500 nm of SiO2 by e-beam deposition. The threshold for observable damage and initiation site morphology for these engineered surfaces was determined. The gold nanoparticle coated surfaces with 500 nm SiO2 coating exhibited pinpoint damage threshold of <0.7 J/cm2 determined by light scattering and Nomarski microscopy. The gold nanoparticle coated surfaces with the 100 nm SiO2 coatings exhibited what nominally appeared to be film exfoliation damage threshold of 19 J/cm2 via light scattering and Nomarski microscopy. With atomic force microscopy pinholes could be detected at fluences greater than 7 J/cm2 and blisters at fluences greater than 3 J/cm2 on the 100-nm-coated surfaces. A series of mechanical indents and scratches were made in the fused silica substrates using a non-indentor. Plastic deformation without cracking led to damage thresholds of approximately 25 J/cm2, whereas indents and scratches with cracking led to damage thresholds of only approximately 5 J/cm2. Particularly illuminating was the deterministic damage of scratches at the deepest end of the scratch, as if the scratch acted as a waveguide.


Laser-Induced Damage in Optical Materials: 1993 | 1994

Large-area conditioning of optics for high-power laser systems

Lynn Matthew Sheehan; Mark R. Kozlowski; Frank Rainer; Michael C. Staggs

This paper presents the procedure and apparatus used to laser condition meter-scale HfO2/SiO2 multilayer polarizers which will be used in the Beamlet laser system. A study of different conditioning techniques, the effects of conditioning, and the determination of a practical process for conditioning large-area optics is presented.


Laser-Induced Damage in Optical Materials: 1993 | 1994

Historical perspective on fifteen years of laser damage thresholds at LLNL

Frank Rainer; Frank P. De Marco; Michael C. Staggs; Mark R. Kozlowski; L. Jeffrey Atherton; Lynn Matthew Sheehan

We have completed a fifteen-year, referenced and documented compilation of more than 15,000 measurements of laser-induced damage thresholds (LIDT) conducted at the Lawrence Livermore National Laboratory. These measurements cover the spectrum from 248 to 1064 nm with pulse durations ranging from < 1 ns to 65 nm and at pulse-repetition frequencies from single shots to 6.3 kHz. We emphasize the changes in LIDTs during the past two years since we last summarized our database. We relate these results to earlier data concentrating on improvements in processing methods, materials, and conditioning techniques. In particular, we highlight the current status of anti-reflective coatings, high reflectors, polarizers, and frequency-conversion crystals used primarily at 355 nm and 1064 nm.


Journal of Applied Physics | 1999

Investigation of optically active defect clusters in KH2PO4 under laser photoexcitation

Stavros G. Demos; Michael C. Staggs; M. Yan; H. B. Radousky; J. J. De Yoreo

Photoexcited defect clusters in the bulk of KH2PO4 crystals are investigated using a microscopic fluorescence imaging system with 1 μm spatial resolution. The observed defect cluster concentration is approximately 104–106 per mm3 depending on the crystal growth method and sector of the crystal. The intensity of the emission clusters varies widely within the image field while a nearly uniformly distributed background is present. Spectroscopic measurements provided information on the emission characteristics of the observed defect population.


Laser-Induced Damage in Optical Materials: 2001 | 2002

Results of raster-scan laser conditioning studies on DKDP triplers using Nd:YAG and excimer lasers

Michael J. Runkel; Kurt P. Neeb; Michael C. Staggs; Jerome M. Auerbach; Alan K. Burnham

In this paper we present the results of damage tests performed at 1064 and 355-nm at 8-10 ns on conventional and rapid growth DKDP tripler crystals. The crystals were laser conditioned prior to damage testing by raster scanning using either Nd:YAG (1064 and 355 nm, 8-10 ns) or excimer lasers at 248, 308 or 351 nm with pulse durations of approximately 30-47 ns. The results show that it is possible to attain increases in 355-nm damage probability fluences of 2X for excimer conditioning at 248 and 308 nm. However, these wavelengths can induce absorption sufficient to induce bulk fracture by thermal shock when impurities such as arsenic, rubidium and sulfur are present in the crystals in sufficient quantity. Tests to evaluate the efficiency of 351-nm conditioning (XeF excimer) show improvements of 2X and that thermal fracture by induced absorption is not a problem. We also discuss our recent discovery that low fluence raster scanning at UV wavelengths leads to 1064-nm damage thresholds of over 100 J/cm2 (10-ns pulses).


Optics Letters | 1999

Microscopic fluorescence imaging of bulk defect clusters in KH(2)PO(4) crystals.

Stavros G. Demos; Michael C. Staggs; M. Yan; H. B. Radousky; J. J. De Yoreo

A microscopic fluorescence imaging system is used to detect optically active centers located inside a transparent dielectric crystal. Defect centers in the bulk of KH(2)PO(4) crystals are imaged based on their near-infrared emission following photoexcitation. The spatial resolution of the system is 1mum in the image plane and 25mum in depth. The experimental results indicate the presence of a large number of optically active defect clusters in different KH(2)PO(4) crystals, whereas the concentration of these clusters depends on the crystal sector and growth method.


International Society for Optical Engineering 47th Annual Meeting, Seattle, WA (US), 07/06/2002--07/11/2002 | 2002

Tissue imaging for cancer detection using NIR autofluorescence

Stavros G. Demos; Michael C. Staggs; Regina Gandour-Edwards; Rajen Ramsamooj; Ralph de Vere White

Near IR imaging using elastic light scattering and tissue fluorescence under long-wavelength laser excitation are explored for cancer detection. Various types of normal and malignant human tissue samples were utilized in this investigation. A set of images of each tissue sample is recorded. These images are then compared with the histopathology of the tissue sample to reveal the optical fingerprint characteristics suitable for cancer detection. The experimental results indicate that the above approaches can help image and differentiate cancer form normal tissue.


Proceedings of SPIE, the International Society for Optical Engineering | 1990

Large Area Laser Conditioning of Dielectric Thin Film Mirrors

Kozlowski; Cr Wolfe; Michael C. Staggs; John H. Campbell

The laser conditioning of dielectric thin film HR coatings has been studied as a practical method for the improvement of the damage thresholds of large area (1.1 m dia.) high power 1064 nm laser mirrors on the LLNL 120 kJ, 100 TW Nova laser system. Both HfO 2 /SiO 2 and ZrO 2 /SiO O FIR coatings were conditioned by rastering with a small (-0.2 mm) diameter beam from a pulsed (18 Hz, 8 ns) Nd-YAG laser (1064 nm). The samples were rastered at various fluences below the unconditioned damage threshold and subsequently damage tested. Large area conditioning studies were also performed using a large aperture beam of the Nova laser. The laser conditioning effect was found to be permanent. Improvements in damage threshold due to conditioning were as high as a factor of 2.7 and were dependent on the conditioning parameters. A model for the conditioning effect is proposed based on the emptying of electronic defect levels within the bandgap of the dielectric materials.

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H. B. Radousky

Lawrence Livermore National Laboratory

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Mark R. Kozlowski

Lawrence Livermore National Laboratory

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M. Yan

Lawrence Livermore National Laboratory

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Michael J. Runkel

Lawrence Livermore National Laboratory

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Frank Rainer

Lawrence Livermore National Laboratory

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J. J. De Yoreo

Lawrence Livermore National Laboratory

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Christopher W. Carr

Lawrence Livermore National Laboratory

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Wigbert J. Siekhaus

Lawrence Livermore National Laboratory

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