Michael D. Pocha

Multiwavelength parallel optical interconnects for massively parallel processing

We describe a multiwavelength, multifiber (parallel) optical interconnect based on multimode fiber ribbon cables with applications in massively parallel processing systems. By combining the benefits of parallel optics and coarse wavelength division multiplexing high aggregate throughputs are possible in a broadcast and select architecture that provides a single hop to all nodes. We identify the key components needed for such a system and report on our component development efforts for multiwavelength parallel optical interconnects. System components reported herein include a four-wavelength bit-parallel transmitter using a silicon optical bench and hybrid packaging, and two-port and three-port wavelength selective filter modules packaged to be compatible with mechanically transferable ferrule terminated ribbon cables. The transmitters were modulated up to 1.25 Gb/s with a bit-error rate better than 10/sup -12/ and no measurable power penalty due to multiple wavelength bit parallel operation. The filters exhibited insertion losses of between 1 and 2 dB and would support 10 nm spaced channels at -23-dB crosstalk.

Avalanche photoconductive switchng

This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV - 35 kV and rise times of 300 - 500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10/sup 3/ to over 10/sup 5/. Switches with two very different physical configurations and with two different illumination wavelengths (1.06 /spl mu/m, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation.

Neutron‐treated, ultrafast, photoconductor detectors

We have investigated homogeneous, photoconductive semiconductors as very fast radiation detectors. We irradiated GaAs, Cr‐doped GaAs, and Fe‐doped InP crystals with 14 MeV neutrons to produce lattice defects that act as fast recombination centers for electrons and holes. Using short‐pulse lasers and 17 MeV linear‐accelerator electrons and bremsstrahlung x rays, we measured the temporal response and sensitivity of these photoconductors as functions of fluence ranging from 1012 to 1016 neutrons/cm2. The carrier lifetime and mobility decrease monotonically as the neutron fluence increases, resulting in faster detector response at the expense of sensitivity. A resolving time of less than 30 ps (full width at half maximum) was measured for the above photoconductors irradiated with ∼1015 neutrons/cm2.

Detection of bio-organism simulants using random binding on a defect-free photonic crystal

The defect-free photonic crystal (PC) slab geometry was explored for size-selective detection of bio-organism simulants. Through feedback between finite-difference time-domain simulations and experiments, we generated a conservative limit of detection estimate for randomized pore filling of a two-dimensional PC slab, and predict that random binding affords the label-free PC-based optical detection of low numbers (of the order of 10) of biological particles.

Miniature Accelerometer and Multichannel Signal Processor for Fiberoptic Fabry–Pérot Sensing

A miniature accelerometer based on silicon microelectromechanical systems (MEMS) fabrication technology has been developed. Using a beam-suspended proof mass and a Fabry-Peacuterot sensing gap, this accelerometer is fiber coupled to a miniature, multichannel, optical readout system which was developed for application in compact optical sensor systems. The approximately 4 mmtimes7 mmtimes2 mm accelerometer can be tailored to cover milli-g to kilo-g acceleration ranges. The miniature readout system is enclosed in approximately a 2 cmtimes8 cmtimes1 cm package, one of the smallest ever reported, and implements the complete optical path for a three-channel embodiment of a multichannel, highly sensitive and accurate, in-phase and quadrature (IQ) optical measurement system for Fabry-Peacuterot sensors. A variety of fiber-based sensors (temperature, strain, pressure, etc.) are commercially available using this Fabry-Peacuterot technique. The complete measurement system with the accelerometer was tested using a shaker table. Sample results are presented for 100 Hz, 10-g peak-peak acceleration

Electrical and optical gain lever effects in InGaAs double quantum-well diode lasers

In multisection laser diodes, the amplitude or frequency modulation (AM or FM) efficiency can be improved using the gain lever effect. To study gain lever, InGaAs double quantum-well (DQW) edge-emitting lasers have been fabricated with integrated passive waveguides and dual sections providing a range of split ratios from 1:1 to 9:1. Both the electrical and the optical gain lever have been examined. An electrical gain lever with greater than 7-dB enhancement of AM efficiency was achieved within the range of appropriate dc biasing currents, but this gain dropped rapidly outside this range. We observed a 4-dB gain in the optical AM efficiency under nonideal biasing conditions. This value agreed with the measured gain for the electrical AM efficiency under similar conditions. We also examined the gain lever effect under large signal modulation for digital logic switching applications. To get a useful gain lever for optical gain quenched logic, a long control section is needed to preserve the gain lever strength and a long interaction length between the input optical signal and the lasing field of the diode must be provided. The gain lever parameter space has been fully characterized and validated against numerical simulations of a semi-3-D hybrid beam propagation method (BPM) model for the coupled electron-photon rate equation. We find that the optical gain lever can be treated using the electrical injection model, once the absorption in the sample is known.

Automated fiber pigtailing technology

The high cost of optoelectronic (OE) devices is due mainly to the labor-intensive packaging process. Manually pigtailing such devices as single-mode laser diodes and modulators is very time consuming with poor quality control. The Photonics Program and the Engineering Research Division at LLNL are addressing several issues associated with automatically packaging OE devices. A fully automated system must include high-precision fiber alignment, fiber attachment techniques, in-situ quality control, and parts handling and feeding. This paper will present on-going work at LLNL in the areas of automated fiber alignment and fiber attachment. For the fiber alignment, we are building an automated fiber pigtailing machine (AFPM) which combines computer vision and object recognition algorithms with active feedback to perform sub-micron alignments of single-mode fibers to modulators and laser diodes. We expect to perform sub-micron alignments in less than five minutes with this technology. For fiber attachment, we are building various geometries of silicon microbenches which include onboard heaters to solder metal-coated fibers and other components in place; these designs are completely compatible with an automated process of OE packaging.<<ETX>>

Subnanosecond linear GaAs photoconductive switching

We are conducting research in photoconductive switching for the purpose of generating subnanosecond pulses in the 25 - 50 kV range. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the siwitch (the carrier generation time in GaAs is 10 sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. We have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm. The illumination source was a Nd:YAG laser operating at 1.06 /spl mu/m.

A low leakage 10 000‐V silicon photoconductive switch

Under high bias voltage, the leakage current through a silicon photoconductive switch is mainly caused by carrier injection at the metallic contacts. A low leakage, high voltage silicon photoconductive switch is fabricated by the introduction of carrier trap centers between the silicon substrate and metallic contacts. We report 2.5‐mm gap photoconductive switches with leakage currents of less than 50 mA at a pulse bias of 10 kV for 600 ns, and an ‘‘on’’ resistance of less than 1.3 Ω, when illustrated by a 1‐ns, 1000‐μJ pulse of 1.05‐μm radiation.

Integrated laser with low-loss high index-contrast waveguides for OEICs

Photonic integrated circuits require the ability to integrate both lasers and waveguides with low absorption and coupling loss. This technology is being developed at LLNL for digital logic gates for optical key generation circuits to facilitate secure communications. Here, we demonstrate an approach of integrating InGaAs DQW edge emitting lasers (EEL) with electron beam evaporated dielectric waveguides. The EELs are defined by electron cyclotron resonance etching (ECR). This approach results in highly anisotropic etched mirrors with smooth etched features (sidewall rms roughness = 28 Å, surface rms roughness = 10 Å). The mirror is etched to form both the laser cavity and define the waveguide mesa, which accommodates a dielectric stack, where the core is aligned with the active region of the laser to achieve maximum vertical mode overlapping. The waveguides are based on SiO2/Ta2O5/SiO2 which yields a high index contrast of 0.6, resulting in low loss guides (~2-3dB/cm). The design of the interface has taken into account the waveguide transmission loss, air gap spacing and tilt between the laser and waveguide. The critical feature for this deposition technique is its required high directionality or minimal sidewall deposition and corner effects. In the butt coupled EEL/waveguide system we have measured a slope efficiency to be as high as 0.45 W/A. We have in conclusion demonstrated a technology that allows direct coupling of a dielectric optical interconnect to a semiconductor laser monolithically fabricated on the semiconductor substrate.