Michael E. Hoenk

High-current-density field emitters based on arrays of carbon nanotube bundles

We have developed high-current density field emission sources using arrays of multiwalled carbon nanotube bundles. The field emission behavior of a variety of lithographically patterned array geometries was investigated and the arrays of 1-μm and 2-μm-diameter nanotube bundles spaced 5μm apart (edge-to-edge spacing) were identified as the most optimum combination, routinely producing 1.5–1.8A∕cm2 at low electric fields of approximately 4V∕μm, rising to >6A∕cm2 at 20V∕μm over a ∼100-μm-diameter area. We have found that the field emission performance depends strongly on the bundle diameter and interbundle spacing and such arrays perform significantly better in field emission than ordered arrays of isolated nanotubes or dense, continuous mats of nanotubes previously reported in literature.

Field emission testing of carbon nanotubes for THz frequency vacuum microtube sources

A carbon nanotube-based high current density electron field emission source is under development at Jet Propulsion Laboratory (JPL) for submillimeter-wave power generation (300 GHz to 3 THz). This source is the basis for a novel vacuum microtube component: the nanoklystron. The nanoklystron is a monolithically fabricated reflex klystron with dimensions in the micrometer range. The goal is to operate this device at much lower voltages than would be required with hot-electron sources and at much higher frequencies than have ever been demonstrated. Both single-walled (SWNTs) as well as multi-walled nanotubes (MWNTs) are being tested as potential field-emission sources. This paper presents initial results and observations of these field emission tests. SWNTs and MWNTs were fabricated using standard CVD techniques. The tube density was higher in the case of MWNT samples. As previously reported, high-density samples suffered from enhanced screening effect thus decreasing their total electron emission. The highest emission currents were measured from disordered, less dense MWNTs and were found to be ~0.63 mA @ 3.6 V/μm (sample 1) and ~3.55 mA @ 6.25 V/μm (sample 2). The high density vertically aligned MWNTs showed low field emission as predicted: 0.31 mA @ 4.7 V/μm.

Growth of a delta‐doped silicon layer by molecular beam epitaxy on a charge‐coupled device for reflection‐limited ultraviolet quantum efficiency

We have used low‐temperature silicon molecular beam epitaxy to grow a δ‐doped silicon layer on a fully processed charge‐coupled device (CCD). The measured quantum efficiency of the δ‐doped backside‐thinned EG&G Reticon CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260–600 nm. The 2.5 nm silicon layer, grown at 450 °C, contained a boron δ‐layer with surface density ∼2×1014 cm−2. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

We have used molecular beam epitaxy (MBE) based delta-doping technology to demonstrate nearly 100% internal quantum efficiency (QE) on silicon electron-multiplied charge-coupled devices (EMCCDs) for single photon counting detection applications. We used atomic layer deposition (ALD) for antireflection (AR) coatings and achieved atomic-scale control over the interfaces and thin film materials parameters. By combining the precision control of MBE and ALD, we have demonstrated more than 50% external QE in the far and near ultraviolet in megapixel arrays. We have demonstrated that other important device performance parameters such as dark current are unchanged after these processes. In this paper, we briefly review ultraviolet detection, report on these results, and briefly discuss the techniques and processes employed.

Delta-doped CCDs: high QE with long-term stability at UV and visible wavelengths

Delta-doped CCDs, developed at JPLs Microdevices Laboratory, have achieved stable 100% internal quantum efficiency in the visible and near UV regions of the spectrum. In this approach, an epitaxial silicon layer is grown on a fully-processed commercial CCD using molecular beam epitaxy. During the silicon growth on the CCD, 30% of a monolayer of boron atoms are deposited on the surface, followed by a 15

High-Q mechanical resonator arrays based on carbon nanotubes

angstrom silicon layer for surface passivation. The boron is nominally incorporated within a single atomic layer at the back surface of the device, resulting in the effective elimination of the backside potential well. The measured quantum efficiency is in good agreement with the theoretical limit imposed by reflection from the Si surface. Enhancement of the total quantum efficiency in the blue visible and near UV has been demonstrated by depositing antireflection coatings on the delta-doped CCD. Recent results on antireflection coatings and quantum efficiency measurements are discussed.

Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate

We present results of the characterization of a nanoelectromechanical signal-processing device based on arrays of carbon nanotubes embedded in RF waveguides. The design, fabrication, and operation of the device will be discussed, including initial RF measurements. Preliminary tests suggest that transmission of an RF signal through the array is associated with the mechanical resonance of the carbon nanotubes.

Technology advancement of the CCD201-20 EMCCD for the WFIRST coronagraph instrument: sensor characterization and radiation damage

Cathodoluminescence scanning electron microscopy is used to study AlxGa1−x As epilayers grown on a nonplanar substrate by molecular beam epitaxy. Grooves parallel to the [011] direction were etched in an undoped GaAs substrate. Growth on such grooves proceeds on particular facet planes. We find that the aluminum concentration in the epilayers is dependent on the facet orientation, changing by as much as 35% from the value in the unpatterned areas. The transition in the aluminum concentration at a boundary between two facets is observed to be very abrupt.

Compositional modulation in AlxGa1−xAs epilayers grown by molecular beam epitaxy on the (111) facets of grooves in a nonplanar substrate

Abstract. The Wide Field InfraRed Survey Telescope-Astrophysics Focused Telescope Asset (WFIRST-AFTA) mission is a 2.4-m class space telescope that will be used across a swath of astrophysical research domains. JPL will provide a high-contrast imaging coronagraph instrument—one of two major astronomical instruments. In order to achieve the low noise performance required to detect planets under extremely low flux conditions, the electron multiplying charge-coupled device (EMCCD) has been baselined for both of the coronagraph’s sensors—the imaging camera and integral field spectrograph. JPL has established an EMCCD test laboratory in order to advance EMCCD maturity to technology readiness level-6. This plan incorporates full sensor characterization, including read noise, dark current, and clock-induced charge. In addition, by considering the unique challenges of the WFIRST space environment, degradation to the sensor’s charge transfer efficiency will be assessed, as a result of damage from high-energy particles such as protons, electrons, and cosmic rays. Science-grade CCD201-20 EMCCDs have been irradiated to a proton fluence that reflects the projected WFIRST orbit. Performance degradation due to radiation displacement damage is reported, which is the first such study for a CCD201-20 that replicates the WFIRST conditions. In addition, techniques intended to identify and mitigate radiation-induced electron trapping, such as trap pumping, custom clocking, and thermal cycling, are discussed.

Ultraviolet antireflection coatings for use in silicon detector design

We report the first observation of a lateral junction formed in an alloy due to an abrupt transition from segregated to random AlGaAs alloy compositions. Al0.25Ga0.75As epilayers were grown by molecular beam epitaxy on [011-bar] oriented grooves in a nonplanar (100) GaAs substrate. A quasi-periodic modulation of the aluminum concentration occurs spontaneously in material grown on the (111) facets of the groove, with a period of 50–70 A along the [111] direction. The compositional modulation is associated with a reduction of the band gap by 130 meV, with respect to the random alloy. While segregation of the AlGaAs alloy has been seen previously, this is the first observation of segregation of AlGaAs grown on a (111) surface. The compositional modulation terminates abruptly at the boundaries of the (111) facet, forming abrupt lateral junctions in the AlGaAs layers grown on a groove.