Michael Först

Nonlinear phononics as an ultrafast route to lattice control

Light can interact with the electrons in a crystalline solid, which in turn generates lattice vibrations or phonons. A related phenomenon was proposed 40 years ago in which it is the ions in the crystal rather than the electrons that mediate the interaction. This effect, known as ionic Raman scattering, is now observed experimentally.

Ultrafast nonlinear all-optical processes in silicon-on-insulator waveguides

In this review we present an overview of the progress made in recent years in the field of integrated silicon-on-insulator (SOI) waveguide photonics with a strong emphasis on third-order nonlinear optical processes. Although the focus is on simple waveguide structures the utilization of complex structures such as microring resonators and photonic crystal structures is briefly discussed as well. Several fabrication methods are explained and methods which improve optical loss, coupling efficiency and polarization dependence are presented. As the demand for bandwidth increases communication systems are forced to use higher bit rates to accommodate the load. A consequence of high-bit-rate systems is that they require short pulses where the importance of waveguide dispersion tailoring becomes increasingly important. The impact of short pulses on the efficiency of all-optical processes is discussed and recent accomplishments in this field are presented. Numerical results of femtosecond, picosecond and nanosecond pulse propagation in SOI waveguides are compared to provide an insight into the physical processes that dominate at these different time scales. In this work we focus on two-photon absorption (TPA), free-carrier absorption (FCA), plasma dispersion and the optical Kerr effect. After describing these nonlinear effects, some other important all-optical processes based on plasma dispersion and the Kerr effect are described, namely cross-absorption modulation (XAM), self-phase modulation (SPM), cross-phase modulation (XPM), four-wave mixing (FWM) and stimulated Raman scattering (SRS). The latter provides the best hope for practical and/or commercial applications and finds its use in amplification and lasing. Furthermore, we present some guidelines for efficient numerical modelling of propagation in SOI waveguides. This review is a good starting point for those who are new in this hot and rapidly emerging field and gives an overview of important considerations that need to be taken into account when designing, fabricating and characterizing SOI waveguides for ultrafast third-order nonlinear all-optical processing.

THz biosensing devices : fundamentals and technology

Future success of biological THz technology applications will strongly depend on the development of compact, low-cost and flexible systems. In this work different approaches for THz biosensor systems based on femtosecond lasers are presented. We discuss the technology for generation, transmission and detection of THz signals as well as their application for marker-free biomolecule detection on functionalized surfaces in dry and fluid environments.

Asynchronous optical sampling for high-speed characterization of integrated resonant terahertz sensors

Two femtosecond Ti:sapphire lasers with slightly different repetition rates near 1 GHz are coupled to implement high-speed asynchronous optical sampling. The application of this technique is successfully demonstrated in the field of terahertz time-domain spectroscopy (TDS). A time delay of 1 ns is scanned at a frequency of 5 kHz without moving mechanical parts. Compared with that of conventional TDS schemes based on lock-in detection and moving mirrors, the readout time of integrated resonant THz sensors is reduced by a factor of 20, opening the way for high-throughput THz sensing in marker-free DNA analysis.

Ultrafast Kerr-induced all-optical wavelength conversion in silicon waveguides using 1.55 μm femtosecond pulses

The propagation of 300 femtosecond optical pulses in Silicon-on Insulator waveguides has been studied by means of a pump-probe set-up. The ultrafast pulses allowed the observation of large Kerr-induced red and blue shifts (9nm and 15nm, respectively) of the probe signal depending on the delay between pump (1554nm) and probe (1683nm) pulses. A numerical model taking into account the Kerr effect, Two Photon Absorption and Free Carrier Absorption is presented and provides good agreement with our experimental data and data in literature. A microring resonator based device is proposed that exploits the observed wavelength shift for sub-picosecond all-optical switching.

25ps all-optical switching in oxygen implanted silicon-on-insulator microring resonator

We present all-optical switching in oxygen ion implanted silicon microring resonators. Time-dependent signal modulation is achieved by shifting resonance wavelengths of microrings through the plasma dispersion effect via femtosecond photogeneration of electron-hole pairs and subsequent trapping at implantation induced defect states. We observe a switching time of 25 ps at extinction ratio of 9 dB and free carrier lifetime of 15 ps for an implantation dose of 7 x 10(12) cm(-2). The influence of implantation dose on the switching speed and additional propagation losses of the silicon waveguide--the latter as a result of implantation induced amorphization--is carefully evaluated and in good agreement with theoretical predictions.

Simultaneous dual-band ultra-high resolution optical coherence tomography

Ultra-high resolution optical coherence tomography (OCT) imaging is demonstrated simultaneously at 840 nm and 1230 nm central wavelength using an off-the-shelf turn-key supercontinuum light source. Spectral filtering of the light source emission results in a double peak spectrum with average powers exceeding 100 mW and bandwidths exceeding 200 nm for each wavelength band. A free-space OCT setup optimized to support both wavelengths in parallel is introduced. OCT imaging of biological tissue ex vivo and in vivo is demonstrated with axial resolutions measured to be < 2 mum and < 4 mum at 840 nm and 1230 nm, respectively. This measuring scheme is used to extract spectroscopic features with outstanding spatial resolution enabling enhanced image contrast.

Three-dimensional simulation model of switching dynamics in phase change random access memory cells

Switching dynamics associated with reset and set operations of vertical phase change random access memory (PCRAM) cells are studied using a three-dimensional simulation model. Based on a finite difference method, the numerical algorithm simulates the electrical, thermal, and phase change dynamics in the PCRAM device during switching operations taking into account electrical and thermal percolation characteristics of the phase change material. Toward a better understanding of switching operations and the optimization of cell designs, the obtained simulation results provide unprecedented insight into temporally and spatially resolved kinetics of device temperature, current densities, and phase transitions. Threshold conditions for reset and set operations are identified in close agreement to existing experimental data, and the scaling ability of the investigated vertical PCRAM cell design to a minimum feature size of at least 40 nm is demonstrated.

High-speed all-optical switching in ion-implanted silicon-on-insulator microring resonators

We demonstrate high-speed all-optical switching via vertical excitation of an electron-hole plasma in an oxygen-ion implanted silicon-on-insulator microring resonator. Based on the plasma dispersion effect the spectral response of the device is rapidly modulated by photoinjection and subsequent recombination of charge carriers at artificially introduced fast recombination centers. At an implantation dose of 1 x 10(12) cm(-2) the carrier lifetime is reduced to 55 ps, which facilitates optical switching of signal light in the 1.55 mum wavelength range at modulation speeds larger than 5 Gbits/s.

Driving magnetic order in a manganite by ultrafast lattice excitation

Femtosecond midinfrared pulses are used to directly excite the lattice of the single-layer manganite La0.5Sr1.5MnO4. Magnetic and orbital orders, as measured by femtosecond resonant soft x-ray diffraction with an x-ray free-electron laser, are reduced within a few picoseconds. This effect is interpreted as a displacive exchange quench, a prompt shift in the equilibrium value of the magnetic- and orbital-order parameters after the lattice has been distorted. Control of magnetism through ultrafast lattice excitation may be of use for high-speed optomagnetism.