Michael G. Mauk
Applied Science Private University
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Featured researches published by Michael G. Mauk.
Head and Neck-journal for The Sciences and Specialties of The Head and Neck | 2008
Barry L. Ziober; Michael G. Mauk; Erica M. Falls; Zongyuan Chen; Amy Ziober; Haim H. Bau
Oral squamous cell carcinoma (OSCC) is a disfiguring and deadly cancer. Despite advances in therapy, many patients continue to face a poor prognosis. Early detection is an important factor in determining the survival of patients with OSCC. No accurate, cost‐efficient, and reproducible method exists to screen patients for OSCC. As a result, many patients are diagnosed at advanced stages of the disease. Early detection would identify patients, facilitating timely treatment and close monitoring. Mass screening requires a rapid oral cancer diagnostic test that can be used in a clinical setting. Current diagnostic techniques for OSCC require modern laboratory facilities, sophisticated equipment, and elaborate and lengthy processing by skilled personnel. The lab‐on‐chip technology holds the promise of replacing these techniques with miniaturized, integrated, automated, inexpensive diagnostic devices. This article describes lab‐on‐chip devices for biomarker‐based identification of oral cancer. Similar methods can be employed for the screening of other types of cancers.
Annals of the New York Academy of Sciences | 2007
Michael G. Mauk; Barry L. Ziober; Zongyuan Chen; Jason A. Thompson; Haim H. Bau
Abstract:u2002 The design of a microfluidic lab‐on‐a‐chip system for point‐of‐care cancer screening and diagnosis of oral squamous cell carcinoma (OSCC) is presented. The chip is based on determining a ∼30‐gene transcription profile in cancer cells isolated from oral fluid samples. Microfluidic cell sorting using magnetic beads functionalized with an antibody against cancer‐specific cell‐surface antigens (e.g., epithelial cell adhesion molecule [EpCAM]) is described. A comprehensive cancer diagnostics chip will integrate microfluidic components for cell lysis, nucleic acid extraction, and amplification and detection of a panel of mRNA isolated from a subpopulation of cancer cells contained in a clinical specimen.
Annals of the New York Academy of Sciences | 2007
William R. Abrams; Cheryl A. Barber; Kurt McCANN; Gary Tong; Zongyuan Chen; Michael G. Mauk; Jing Wang; Alex Volkov; Pete Bourdelle; Paul L. A. M. Corstjens; Michel Zuiderwijk; Keith Kardos; Shang Li; Hans J. Tanke; R. Sam Niedbala; Daniel Malamud; Haim H. Bau
Abstract:u2002 Confirmatory detection of diseases, such as HIV and HIV‐associated pathogens in a rapid point‐of‐care (POC) diagnostic remains a goal for disease control, prevention, and therapy. If a sample could be analyzed onsite with a verified result, the individual could be counseled immediately and appropriate therapy initiated. Our group is focused on developing a microfluidic “lab‐on‐a‐chip” that will simultaneously identify antigens, antibodies, RNA, and DNA using a single oral sample. The approach has been to design individual modules for each assay that uses similar components (e.g., valves, heaters, metering chambers, mixers) installed on a polycarbonate base with a common reporter system. Assay miniaturization reduces the overall analysis time, increases accuracy by simultaneously identifying multiple targets, and enhances detector sensitivity by upconverting phosphor technology (UPT). Our microfluidic approach employs four interrelated components: (1) sample acquisition–OraSure UPlink™ collectors that pick‐up and release bacteria, soluble analytes, and viruses from an oral sample; (2) microfluidic processing–movement of microliter volumes of analyte, target analyte extraction and amplification; (3) detection of analytes using UPT particles in a lateral flow system; and (4) software for processing the results. Ultimately, the oral‐based microscale diagnostic system will detect viruses and bacteria, associated pathogen antigens and nucleic acids, and antibodies to these pathogens.
Future generation photovoltaic technologies | 2008
Michael G. Mauk; Paul E. Sims; Robert B. Hall
A mandatory requirement for the development of a large solar photovoltaic power industry is the development a thin silicon layer structure or a cheaper silicon feedstock that does not have the high purity requirements of the semiconductor wafer industry. In the latter case the solar grade silicon feedstock supply must be decoupled from the semiconductor silicon feedstock industry. If one of these these events do not occur, then solar energy will remain a small and specialized industry that will start to shrink as the world power grid capacity increases.
Third NREL Conference on thermophotovoltaic generation of electricity | 1997
Michael G. Mauk; Zane A. Shellenbarger; Mark I. Gottfried; Jeff A. Cox; Bryan W. Feyock; James B. McNeely; Louis C. Dinetta; Robert L. Mueller
We survey and assess new concepts for “next-generation” GaSb-based thermophotovoltaic (TPV) devices. The objectives are new device structures with novel back mirror designs to better utilize photon recycling effects, isolation schemes to realize monolithic, series-interconnected TPV arrays, and reduced cost by the use of surrogate substrates in place of GaSb or InAs wafers. The processes considered include 1. liquid-phase epitaxial lateral overgrowth on patterned, masked substrates, 2. epitaxial film transfer or wafer fusion techniques, 3. epitaxial growth of GaSb alloys on high resistivity (lattice matched) ZnTe, 4. realization of semi-insulating III-V antimonides, 5. selective wet oxidation of Al-containing antimonides (e.g., AlAsSb) wherein a the semiconducting epitaxial layer is converted to Al2O3 to form a buried insulating layer, and 6. GaSb- and InAs-on-silicon heteroepitaxy.
Future generation photovoltaic technologies | 2008
Michael G. Mauk; Bryan W. Feyock; Robert B. Hall; Kathleen Dugan Cavanaugh; Jeffrey E. Cotter
An approach for low-cost, thin-film polycrystalline GaAs solar cells on large-area silicon-based substrates is described. A proprietary Silicon-Film™ sheet material serves as an inexpensive substrate on which large-grain (>2u2009mm) polycrystalline GaAs films can be grown. The GaAs films are grown by a simple close-spaced vapor transport (CSVT) technique. A recrystallized Ge1−xSix buffer layer between the GaAs epilayer and Silicon-Film substrate can facilitate growth of the GaAs. A selective mode of growth to reduce thermal stress and lattice mismatch effects, along with a new interconnection scheme using a transparent conducting oxide, is described.
Unattended Ground Sensor Technologies and Applications V | 2003
Oleg V. Sulima; Jeffrey A. Cox; Paul E. Sims; Michael G. Mauk; Nikolai N. Faleev
This paper reports progress in the development of a miniature photovoltaic (PV) arrays consisting of monolithically series connected AlGaAs/GaAs PV cells used in combination with polymeric photoluminescent fibers to recharge batteries of unattended ground sensors (UGS). Outdoor tests of the arrays showed feasibility of this approach. Optimization of the fibers design (material used, diameter, coupling, etc.) is discussed. Better optical matching of the fibers and PV cells was achieved through replacing of GaAs photoactive layers by AlGaAs ones having a higher bandgap.
Photonics packaging and integration. Conference | 2003
Saurabh K. Lohokare; Dennis W. Prather; Michael G. Mauk; Jeffery A. Cox; Oleg V. Sulima
Integrated 3-D Micro-Optical Interconnection System Chip-level optical interconnects is an alternative technology that offers the ability to potentially overcome the interconnect bottleneck projected to occur in high-end computing and telecommunication systems. In this context, we are investigating a fused 3-D micro-optical architecture that enables through-wafer vertical optical interconnects. Based on this architecture a prototype 3-D micro-optical interconnection system is fabricated that is scaleable and can be easily modified to implement various optical interconnect configurations. This prototype consists of an integrated optoelectronic transmitter and receiver multichip module. A diffractive optical element is used for optically interconnecting the multichip modules and in establishing a point-to-point link. The link length, as measured from the optical source of the transmitter to the detector plane of the receiver is 2.332 mm. The transmitter and receiver module dimensions as well as the integrated system volume are a meager 2.9x3.3 mm2, 2.1x2.7 mm2, and 15.27mm3, respectively, and preserve the VLSI-scale. The design, fabrication, integration of this system, and experimental results are presented.
Solar Cells#R##N#Materials Manufacture and Operation | 2005
Michael G. Mauk; Paul E. Sims; James A. Rand; Allen Barnett
Publisher Summary nThis chapter provides an overview of thin silicon solar cells. Thin silicon solar cells can greatly benefit from light-trapping effects, which can offset the relatively weak absorption near-bandgap energy photons by increasing the optical path length of light within a solar cell structure. Three types of reflective surfaces can be employed—random texture, geometric or regular structuring, and the use of optical elements external to the silicon solar cell structure—to implement light trapping in silicon solar cells. Light trapping has been incorporated in structures with thickness ranging from less than 1 micron to 400 microns with varying degrees of success. The factors that influence the open-circuit voltage of a silicon solar cell are the same irrespective of the fact whether the device is thin or thick. These include doping levels, various bulk recombination mechanisms, and surface recombination.
Light-emitting diodes : research, manufacturing, and applications. Conference | 1997
Michael G. Mauk; P. A. Burch; Scott W. Johnson; Zane A. Shellenbarger; James B. McNeely; Thomas A. Goodwin; Bryan W. Feyock
Optical cavity light-emitting diode structures with buried mirrors, and their fabrication by lateral epitaxy are described. Single-crystal, high-quality epitaxial layers are formed over substrates coated with patterned, reflective masks using liquid-phase or vapor-phase epitaxial lateral overgrowth processes. The reflecting mask acts as a backside mirror and forms an optical cavity leading to enhanced external quantum efficiencies. An AlGaAs optical cavity LED incorporating a refractory metal buried mirror is assessed: a greater than 3-fold increase in output optical power is measured compared to control devices with no buried mirror. Application of the epitaxial overgrowth techniques to LED structures utilizing electron-beam deposited dielectric/semiconductor buried mirrors and to other semiconductor materials, such as InGaAsSb, SiC, and ZnSe is described.