Michael Horn-von Hoegen

Electronic acceleration of atomic motions and disordering in bismuth.

The development of X-ray and electron diffraction methods with ultrahigh time resolution has made it possible to map directly, at the atomic level, structural changes in solids induced by laser excitation. This has resulted in unprecedented insights into the lattice dynamics of solids undergoing phase transitions. In aluminium, for example, femtosecond optical excitation hardly affects the potential energy surface of the lattice; instead, melting of the material is governed by the transfer of thermal energy between the excited electrons and the initially cold lattice. In semiconductors, in contrast, exciting ∼10 per cent of the valence electrons results in non-thermal lattice collapse owing to the antibonding character of the conduction band. These different material responses raise the intriguing question of how Peierls-distorted systems such as bismuth will respond to strong excitations. The evolution of the atomic configuration of bismuth upon excitation of its A1g lattice mode, which involves damped oscillations of atoms along the direction of the Peierls distortion of the crystal, has been probed, but the actual melting of the material has not yet been investigated. Here we present a femtosecond electron diffraction study of the structural changes in crystalline bismuth as it undergoes laser-induced melting. We find that the dynamics of the phase transition depend strongly on the excitation intensity, with melting occurring within 190 fs (that is, within half a period of the unperturbed A1g lattice mode) at the highest excitation. We attribute the surprising speed of the melting process to laser-induced changes in the potential energy surface of the lattice, which result in strong acceleration of the atoms along the longitudinal direction of the lattice and efficient coupling of this motion to an unstable transverse vibrational mode. That is, the atomic motions in crystalline bismuth can be electronically accelerated so that the solid-to-liquid phase transition occurs on a sub-vibrational timescale.

In?situ observation of stress relaxation in epitaxial graphene

Upon cooling, branched line defects develop in epitaxial graphene grown at high temperature on Pt(111) and Ir(111). Using atomically resolved scanning tunneling microscopy we demonstrate that these defects are wrinkles in the graphene layer, i.e. stripes of partially delaminated graphene. With low energy electron microscopy (LEEM) we investigate the wrinkling phenomenon in situ. Upon temperature cycling we observe hysteresis in the appearance and disappearance of the wrinkles. Simultaneously with wrinkle formation a change in bright field imaging intensity of adjacent areas and a shift in the moire spot positions for micro diffraction of such areas takes place. The stress relieved by wrinkle formation results from the mismatch in thermal expansion coefficients of graphene and the substrate. A simple one-dimensional model taking into account the energies related to strain, delamination and bending of graphene is in qualitative agreement with our observations.

Au stabilization and coverage of sawtooth facets on Si nanowires grown by vapor-liquid-solid epitaxy.

Si nanowires grown in UHV by Au-catalyzed vapor-liquid-solid epitaxy are known to exhibit sidewalls with {112}-type orientation that show faceting. To understand the origin of the faceting, Au induced faceting on Si(112) surfaces was studied in situ by spot-profile-analyzing low-energy electron diffraction. With increasing Au coverage at 750 degrees C, the Si(112) surface undergoes various morphological transformations until, at a critical Au coverage of about 3.1 x 10 (14) atoms/cm (2), a phase consisting of large (111) and (113) facets forms, similar in structure to the nanowire sidewalls. This phase is stable at larger Au coverages in equilibrium with Au droplets. We suggest that Si nanowire surfaces exhibit this structure, and we derive the Au coverage on the two types of facets.

Atomically Smooth p-Doped Silicon Nanowires Catalyzed by Aluminum at Low Temperature

Silicon nanowires (SiNWs) are powerful nanotechnological building blocks. To date, a variety of metals have been used to synthesize high-density epitaxial SiNWs through metal-catalyzed vapor phase epitaxy. Understanding the impact of the catalyst on the intrinsic properties of SiNWs is critical for precise manipulation of the emerging SiNW-based devices. Here we demonstrate that SiNWs synthesized at low-temperature by ultrahigh vacuum chemical vapor deposition using Al as a catalyst present distinct morphological properties. In particular, these nanowires are atomically smooth in contrast to rough {112}-type sidewalls characteristic of the intensively investigated Au-catalyzed SiNWs. We show that the stabilizing effect of Al plays the key role in the observed nanowire surface morphology. In fact, unlike Au which induces (111) and (113) facets on the nanowire sidewall surface, Al revokes the reconstruction along the [112] direction leading to equivalent adjacent step edges and flat surfaces. Our finding sets the lower limit of the Al surface density on the nanowire sidewalls at ∼2 atom/nm(2). Additionally, despite using temperatures of ca. 110-170 K below the eutectic point, we found that the incorporation of Al into the growing nanowires is sufficient to induce an effective p-type doping of SiNWs. These results demonstrate that the catalyst plays a crucial role is shaping the structural and electrical properties of SiNWs.

Normal-Incidence Photoemission Electron Microscopy (NI-PEEM) for Imaging Surface Plasmon Polaritons

We introduce a novel time-resolved photoemission-based near-field illumination method, referred to as femtosecond normal-incidence photoemission microscopy (NI-PEEM). The change from the commonly used grazing-incidence to normal-incidence illumination geometry has a major impact on the achievable contrast and, hence, on the imaging potential of transient local near fields. By imaging surface plasmon polaritons in normal light incidence geometry, the observed fringe spacing directly resembles the wavelength of the plasmon wave. Our novel approach provides a direct descriptive visualization of SPP wave packets propagating across a metal surface.

Homoepitaxy of Si(111) is surface defect mediated

Abstract Superstructure domain boundaries (linear surface defects) act as island nucleation sites in steady state Si(111) homoepitaxial growth below 650°C. The dependence of the average island size on the deposition rate R allows the estimation of the size of the critical nucleus i ∗ to be only one or two atoms. This heterogeneous nucleation mechanism dominates the multilayer steady state growth regime. This is in contrast to the homogeneous nucleation of Si in the submonolayer regime on the perfect Si(111)-(7 × 7) surface, where a critical nucleus size of i ∗ ⩾ 5 is reported. Scaling of the temperature of growth and the deposition rate is observed. We do not observe a built up of the lateral and vertical surface roughness during growth: there is no Schwoebel barrier.

Influence of H on low temperature Si(111) homoepitaxy

Abstract Molecular beam homoepitaxy on H terminated Si(111)-(1 × 1) surfaces has been studied by high resolution low energy electron diffraction (LEED). Exponentially decaying LEED intensity oscillations reflect the formation of an increasingly rough growth front during Si deposition. For temperatures below 480°C bulk defects are generated which finally lead to non crystalline films. The strong influence of H (even submonolayer coverages) on the growth behaviour is attributed to the high binding energy of 3.1 eV of the HSi bond, which hinders the place exchange process during growth.

To tilt or not to tilt: Correction of the distortion caused by inclined sample surfaces in low-energy electron diffraction

Low-energy electron diffraction (LEED) is a widely employed technique for the structural characterization of crystalline surfaces and epitaxial adsorbates. For technical reasons the accessible reciprocal space is limited at a given primary electron energy E. This limitation may be overcome by sweeping E to observe higher diffraction orders decisively enhancing the quantitative examination. Yet, in many cases, such as molecular films with rather large unit cells, the adsorbate reflexes become less pronounced at energies high enough to observe substrate reflexes. One possibility to overcome this problem is an intentional inclination of the sample surface during the measurement at the expense of the quantitative interpretability of then severely distorted diffraction patterns. Here, we introduce a correction method for the axially symmetric distortion in LEED images of tilted samples. We provide experimental confirmation for micro-channel plate LEED and spot-profile analysis LEED instruments using the (7×7) reconstructed surface of a Si(111) single crystal as a reference sample. Finally, we demonstrate that the correction of this distortion considerably improves the quantitative analysis of diffraction patterns of adsorbates since substrate and adsorbate reflexes can be evaluated simultaneously. As an illustrative example we have chosen an epitaxial monolayer of 3,4,9,10-perylenetetracarboxylic dianhydride on Ag(111) that is known to form a commensurate superstructure.

Reciprocal space mapping by spot profile analyzing low energy electron diffraction

We present an experimental approach for the recording of two-dimensional reciprocal space maps using spot profile analyzing low energy electron diffraction (SPA-LEED). A specialized alignment procedure eliminates the shifting of LEED patterns on the screen which is commonly observed upon variation of the electron energy. After the alignment, a set of one-dimensional sections through the diffraction pattern is recorded at different energies. A freely available software tool is used to assemble the sections into a reciprocal space map. The necessary modifications of the Burr-Brown computer interface of the two Leybold and Omicron type SPA-LEED instruments are discussed and step-by-step instructions are given to adapt the SPA 4.1d software to the changed hardware. Au induced faceting of 4° vicinal Si(001) is used as an example to demonstrate the technique.

Heat transport in nanoscale heterosystems: a numerical and analytical study

The numerical integration of the heat diffusion equation applied to the Bi/Si-heterosystem is presented for times larger than the characteristic time of electron-phonon coupling. By comparing the numerical results to experimental data, it is shown that the thermal boundary resistance of the interface can be directly determined from the characteristic decay time of the observed surface cooling, and an elaborate simulation of the temporal surface temperature evolution can be omitted. Additionally, the numerical solution shows that the substrate temperature only negligibly varies with time and can be considered constant. In this case, an analytical solution can be found. A thorough examination of the analytical solution shows that the surface cooling behavior strongly depends on the initial temperature distribution which can be used to study energy transport properties at short delays after the excitation.