Michael Lilly

Vertical field-effect transistor based on wave-function extension

Department of Physics, Stanford University, Stanford CA 94305-4045 USA(Dated: July 21, 2011)We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depletingone layer will extendits wavefunction tooverlap the other layer and increase tunnelcurrent.We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel currentincrease of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of thedesign to other material systems such as graphene.

Quantum computer aided design simulation and optimization of semiconductor quantum dots

We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for quantum bits (qubits). This finite-element simulator has three differentiating features: (i) its core contains nonlinear Poisson, effective mass Schrodinger, and Configuration Interaction solvers that have massively parallel capability for high simulation throughput and can be run individually or combined self-consistently for 1D/2D/3D quantum devices; (ii) the core solvers show superior convergence even at near-zero-Kelvin temperatures, which is critical for modeling quantum computing devices; and (iii) it interfaces directly with the full-featured optimization engine Dakota. In this work, we describe the capabilities and implementation of the QCAD simulation tool and show how it can be used to both analyze existing experimental QD devices through capacitance calculations and aid in the design of few-electron multi-QDs. In parti...

Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot.

We report Pauli blockade in a multielectron silicon metal-oxide-semiconductor double quantum dot with an integrated charge sensor. The current is rectified up to a blockade energy of 0.18 ± 0.03 meV. The blockade energy is analogous to singlet-triplet splitting in a two electron double quantum dot. Built-in imbalances of tunnel rates in the MOS DQD obfuscate some edges of the bias triangles. A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges. A bound on relaxation time of the triplet-like state is also obtained from this measurement.

High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism

The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mapping processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities > 99.3% and > 99.86% for the conventional and enhanced readout respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has one-electron signal and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach.

Efficient self-consistent quantum transport simulator for quantum devices

We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulation of 1D quantum devices. Applying the general CBR approach to 1D open systems results in a set of very simple equations that are derived and given in detail for the first time. The charge self-consistency of the coupled CBR-Poisson equations is achieved by using the predictor-corrector iteration scheme with the optional Anderson acceleration. In addition, we introduce a new way to convert an equilibrium electrostatic barrier potential calculated from an external simulator to an effective doping profile, which is then used by the CBR-Poisson code for transport simulation of the barrier under non-zero biases. The code has been applied to simulate the quantum transport in a double barrier structure and across a tunnel barrier in a silicon double quantum dot. Extremely fast self-consistent 1D simulations of the differential conductance across a tunnel barrier in the quantum dot show better qualitative agreement with experiment than non-self-consistent simulations.

Mechanical flip-chip for ultra-high electron mobility devices

Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.

Novel many-body transport phenomenon in coupled quantum wires

We demonstrate the presence of a resonant interaction between a pair of coupled quantum wires, which are formed in the ultrahigh mobility two-dimensional electron gas of a GaAs/AlGaAs quantum well. The coupled-wire system is realized by an extension of the split-gate technique, in which bias voltages are applied to Schottky gates on the semiconductor surface, to vary the width of the two quantum wires, as well as the strength of the coupling between them. The key observation of interest here is one in which the gate voltages used to define one of the wires are first fixed, after which the conductance of this wire is measured as the gate voltage used to form the other wire is swept. Over the range of gate voltage where the swept wire pinches off, we observe a resonant peak in the conductance of the fixed wire that is correlated precisely to this pinchoff condition. In this paper, we present new results on the current- and temperature-dependence of this conductance resonance, which we suggest is related to the formation of a local moment in the swept wire as its conductance is reduced below 2e/sup 2//h.