Michael Shearn

Terahertz All-Optical Modulation in a Silicon-Polymer Hybrid System

Although gigahertz-scale free-carrier modulators have been demonstrated in silicon, intensity modulators operating at terahertz speeds have not been reported because of silicon’s weak ultrafast nonlinearity. We have demonstrated intensity modulation of light with light in a silicon–polymer waveguide device, based on the all-optical Kerr effect—the ultrafast effect used in four-wave mixing. Direct measurements of time-domain intensity modulation are made at speeds of 10 GHz. We showed experimentally that the mechanism of this modulation is ultrafast through spectral measurements, and that intensity modulation at frequencies in excess of 1 THz can be obtained. By integrating optical polymers through evanescent coupling to silicon waveguides, we greatly increase the effective nonlinearity of the waveguide, allowing operation at continuous-wave power levels compatible with telecommunication systems. These devices are a first step in the development of large-scale integrated ultrafast optical logic in silicon, and are two orders of magnitude faster than previously reported silicon devices.

Electrically Pumped Hybrid Evanescent Si/InGaAsP Lasers

Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III-V gain material for the first time to our knowledge. The lasing threshold current of 300-mum-long devices was as low as 24 mA, with a maximal single facet output power of 4.2 mW at 15 degrees C. Longer devices achieved a maximal single facet output power as high as 12.7 mW, a single facet slope efficiency of 8.4%, and a lasing threshold current density of 1 kA/cm2. Continuous wave laser operation was obtained up to 45 degrees C. The threshold current density, output power, and efficiency obtained improve upon those of previously reported devices having a similar geometry. Facet images indicate that the output light is largely confined to the Si waveguide.

Ga+ Beam Lithography for Nanoscale Silicon Reactive Ion Etching

By using a dry etch chemistry which relies on the highly preferential etching of silicon, over that of gallium (Ga), we show resist-free fabrication of precision, high aspect ratio nanostructures and microstructures in silicon using a focused ion beam (FIB) and an inductively coupled plasma reactive ion etcher (ICP-RIE). Silicon etch masks are patterned via Ga(+) ion implantation in a FIB and then anisotropically etched in an ICP-RIE using fluorinated etch chemistries. We determine the critical areal density of the implanted Ga layer in silicon required to achieve a desired etch depth for both a Pseudo Bosch (SF(6)/C(4)F(8)) and cryogenic fluorine (SF(6)/O(2)) silicon etching. High fidelity nanoscale structures down to 30 nm and high aspect ratio structures of 17:1 are demonstrated. Since etch masks may be patterned on uneven surfaces, we utilize this lithography to create multilayer structures in silicon. The linear selectivity versus implanted Ga density enables grayscale lithography. Limits on the ultimate resolution and selectivity of Ga lithography are also discussed.

Optical-CDMA in InP

This paper describes the InP platforms for photonic integration and the development on these platforms of an optical code division multiple access (O-CDMA) system for local area networks. We demonstrate three building blocks of this system: an optical pulse source, an encoder/decoder pair, and a threshold detector. The optical pulse source consists of an integrated colliding pulse-mode laser with nearly transform-limited 10 Gb/s pulses and optical injection locking to an external clock for synchronization. The encoder/decoder pair is based on arrayed waveguide gratings. Bit-error-rate measurements involving six users at 10 Gb/s showed error-free transmission, while O-CDMA codes were calibrated using frequency resolved optical gating. For threshold detection after the decoder, we compared two Mach--Zehnder interferometer (MZI)-based optical thresholding schemes and present results on a new type of electroabsorber-based MZI.

Advanced Plasma Processing: Etching, Deposition, and Wafer Bonding Techniques for Semiconductor Applications

Plasma processing techniques are one of the cornerstones of modern semiconductor fabrication. Low pressure plasmas in particular can achieve high radical density, high selectivity, and anisotropic etch profiles at low temperatures and mild voltages. This gentle processing environment prevents unwanted diffusion and degradation of materials due to heat and lattice damage from ion bombardment. Plasma treatments have a minimal effect on existing wafer structure, which is a key requirement for large scale integration schemes such as CMOS. In addition, recent progress in plasma-assisted wafer bonding has demonstrated low temperature, low pressure recipes utilizing O_2 plasma surface treatment for joining dissimilar semiconductor materials, such as silicon (Si) and indium phosphide (InP) (Fang et al., 2006).

Wafer-bonded single-crystal silicon slot waveguides and ring resonators

We fabricated horizontal Si slot waveguides with a 25 nm SiO2 slot layer by bonding thin Si-on-insulator wafers. After removing the Si substrate and buried oxide from one side of the bonded structure, grating-coupled waveguides and ring resonators were partially etched into the Si/SiO2/Si device layers. The gratings exhibit efficiencies of up to 23% at 1550 nm and the ring resonators were measured to have loaded quality factors near 42 000 for the lowest-order transverse-electric mode, corresponding to a propagation loss of 15 dB/cm. The leaky lowest-order transverse-magnetic mode was also observed with a propagation loss of 44 dB/cm.

Spectral phase encoded time spread optical code division multiple access technology for next generation communication networks [Invited]

We overview and summarize the progress of the spectral phase encoded time spreading (SPECTS) optical code division multiple access (O-CDMA) technology. Recent progress included a demonstration of a ...

Ga+ beam lithography for suspended lateral beams and nanowires

The authors demonstrate the fabrication of suspended nanowires and doubly clamped beams by using a focused ion beam implanted Ga etch mask followed by an inductively coupled plasma reactive ion etching of silicon. This method will demonstrate how a two-step, completely dry fabrication sequence can be tuned to generate nanomechanical structures on either silicon substrates or silicon on insulator (SOI). This method was used to generate lateral nanowires suspended between 2 µm scaled structures with lengths up to 16 µm and widths down to 40 nm on a silicon substrate. The authors also fabricate 10 µm long doubly clamped beams on SOIs that are 20 nm thick and a minimum of 150 nm wide. In situ electrical measurements of the beams demonstrate a reduction of resistivity from > 37.5 Ω cm down to 0.25 Ω cm. Transmission electron microscopy for quantifying both surface roughness and crystallinity of the suspended nanowires was performed. Finally, a dose array for repeatable fabrication of a desired beam width was also experimentally determined.

Development of the Radiometer Atmospheric CubeSat Experiment payload

The Jet Propulsion Laboratory (JPL) is developing the Radiometer Atmospheric CubeSat Experiment (RACE), which consists of a water vapor radiometer integrated on a 3 U CubeSat platform. RACE will measure 2 channels off the 183 GHz water vapor line, and will be used to validate new low noise amplifier technology and internal calibration methodology. RACE will advance the technology readiness level (TRL) of the 183 GHz receiver subsystem from TRL 4 to TRL 6 and a CubeSat 183 GHz radiometer system from TRL 4 to TRL 7.

Super-Long Cavity, Monolithically Integrated 1-GHz Hybrid Mode-Locked InP Laser for All-Optical Sampling

A 1-GHz hybrid mode-locked monolithic semiconductor laser on an InP platform is demonstrated. Monolithic integration of the 4.1 cm laser with active quantum well and passive waveguide is achieved with 1-D photonic crystal mirrors.