Michael T. Yeung

Tungsten tetraboride, an inexpensive superhard material

Tungsten tetraboride (WB4) is an interesting candidate as a less expensive member of the growing group of superhard transition metal borides. WB4 was successfully synthesized by arc melting from the elements. Characterization using powder X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopy (EDX) indicates that the as-synthesized material is phase pure. The zero-pressure bulk modulus, as measured by high-pressure X-ray diffraction for WB4, is 339 GPa. Mechanical testing using microindentation gives a Vickers hardness of 43.3 ± 2.9 GPa under an applied load of 0.49 N. Various ratios of rhenium were added to WB4 in an attempt to increase hardness. With the addition of 1 at.% Re, the Vickers hardness increased to approximately 50 GPa at 0.49 N. Powders of tungsten tetraboride with and without 1 at.% Re addition are thermally stable up to approximately 400 °C in air as measured by thermal gravimetric analysis.

Mechanochemical synthesis and thermoelectric properties of high quality magnesium silicide

Magnesium silicide and related alloys are attractive for thermoelectric applications due to their low toxicity, thermal stability, low density, relative abundance and low cost of production. Earlier work on the synthesis of Mg2Siviahigh energy ball milling resulted in incomplete product formation, oxide impurities, and contamination from milling media. Here we present an improved solid-state synthesis of n-type magnesium silicide using the mechanochemical technique of high energy ball milling of the elements followed by high pressure sintering using hot uniaxial compaction. This robust synthetic method permits a detailed investigation of thermoelectric properties as a function of Bi doping. The thermoelectric properties of Mg2Si1−xBix (0 ≤ x ≤ 0.021) samples are characterized from 300 K to 775 K. These results are analyzed within a single parabolic band (SPB) model to determine the effective conduction band parameters and identify regimes of non-SPB behavior.

Vapor-Phase Polymerization of Nanofibrillar Poly(3,4-ethylenedioxythiophene) for Supercapacitors

Nanostructures of the conducting polymer poly(3,4-ethylenedioxythiophene) with large surface areas enhance the performance of energy storage devices such as electrochemical supercapacitors. However, until now, high aspect ratio nanofibers of this polymer could only be deposited from the vapor-phase, utilizing extrinsic hard templates such as electrospun nanofibers and anodized aluminum oxide. These routes result in low conductivity and require postsynthetic template removal, conditions that stifle the development of conducting polymer electronics. Here we introduce a simple process that overcomes these drawbacks and results in vertically directed high aspect ratio poly(3,4-ethylenedioxythiophene) nanofibers possessing a high conductivity of 130 S/cm. Nanofibers deposit as a freestanding mechanically robust film that is easily processable into a supercapacitor without using organic binders or conductive additives and is characterized by excellent cycling stability, retaining more than 92% of its initial capacitance after 10,000 charge/discharge cycles. Deposition of nanofibers on a hard carbon fiber paper current collector affords a highly efficient and stable electrode for a supercapacitor exhibiting gravimetric capacitance of 175 F/g and 94% capacitance retention after 1000 cycles.

High Surface Area Tunnels in Hexagonal WO3

High surface area in h-WO3 has been verified from the intracrystalline tunnels. This bottom-up approach differs from conventional templating-type methods. The 3.67 Å diameter tunnels are characterized by low-pressure CO2 adsorption isotherms with nonlocal density functional theory fitting, transmission electron microscopy, and thermal gravimetric analysis. These open and rigid tunnels absorb H(+) and Li(+), but not Na(+) in aqueous electrolytes without inducing a phase transformation, accessing both internal and external active sites. Moreover, these tunnel structures demonstrate high specific pseudocapacitance and good stability in an H2SO4 aqueous electrolyte. Thus, the high surface area created from 3.67 Å diameter tunnels in h-WO3 shows potential applications in electrochemical energy storage, selective ion transfer, and selective gas adsorption.

Rediscovering the Crystal Chemistry of Borides

For decades, borides have been primarily studied as crystallographic oddities. With such a wide variety of structures (a quick survey of the Inorganic Crystal Structure Database counts 1253 entries for binary boron compounds!), it is surprising that the applications of borides have been quite limited despite a great deal of fundamental research. If anything, the rich crystal chemistry found in borides could well provide the right tool for almost any application. The interplay between metals and the boron results in even more varied materials properties, many of which can be tuned via chemistry. Thus, the aim of this review is to reintroduce to the scientific community the developments in boride crystal chemistry over the past 60 years. We tie structures to material properties, and furthermore, elaborate on convenient synthetic routes toward preparing borides.

Graphene-Assisted Solution Growth of Vertically Oriented Organic Semiconducting Single Crystals

Vertically oriented structures of single crystalline conductors and semiconductors are of great technological importance due to their directional charge carrier transport, high device density, and interesting optical properties. However, creating such architectures for organic electronic materials remains challenging. Here, we report a facile, controllable route for producing oriented vertical arrays of single crystalline conjugated molecules using graphene as the guiding substrate. The arrays exhibit uniform morphological and crystallographic orientations. Using an oligoaniline as an example, we demonstrate this method to be highly versatile in controlling the nucleation densities, crystal sizes, and orientations. Charge carriers are shown to travel most efficiently along the vertical interfacial stacking direction with a conductivity of 12.3 S/cm in individual crystals, the highest reported to date for an aniline oligomer. These crystal arrays can be readily patterned and their current harnessed collectively over large areas, illustrating the promise for both micro- and macroscopic device applications.

Superhard Monoborides: Hardness Enhancement through Alloying in W1−xTaxB

In tungsten monoboride (WB), the boron atoms are linked in parallel serpentine arrays, with tungsten atoms in between. This lattice is metallic, unlike conventional covalent superhard materials such as diamond or cubic boron nitride. By selectively substituting tungsten atoms with tantalum, the Vickers hardness can be increased to 42.8 GPa, creating a new superhard metal.

Extrinsic Hardening of Superhard Tungsten Tetraboride Alloys with Group 4 Transition Metals

Alloys of tungsten tetraboride (WB4) with the group 4 transition metals, titanium (Ti), zirconium (Zr), and hafnium (Hf), of different concentrations (0-50 at. % on a metals basis) were synthesized by arc-melting in order to study their mechanical properties. The phase composition and purity of the as-synthesized samples were confirmed using powder X-ray diffraction (PXRD) and energy dispersive X-ray spectroscopy (EDS). The solubility limit as determined by PXRD is 20 at. % for Ti, 10 at. % for Zr, and 8 at. % for Hf. Vickers indentation measurements of WB4 alloys with 8 at. % Ti, 8 at. % Zr, and 6 at. % Hf gave hardness values, Hv, of 50.9 ± 2.2, 55.9 ± 2.7 and 51.6 ± 2.8 GPa, respectively, compared to 43.3 GPa for pure WB4 under an applied load of 0.49 N. Each of the aforementioned compositions are considered superhard (Hv > 40 GPa), likely due to extrinsic hardening that plays a key role in these superhard metal borides. Furthermore, these materials exhibit a significantly reduced indentation size effect, which can be seen in the plateauing hardness values for the W1-xZrxB4 alloy. In addition, W0.92Zr0.08B4, a product of spinoidal decomposition, possesses nanostructured grains and enhanced grain hardening. The hardness of W0.92Zr0.08B4 is 34.7 ± 0.65 GPa under an applied load of 4.9 N, the highest value obtained for any superhard metal at this relatively high loading. In addition, the WB4 alloys with Ti, Zr, and Hf showed a substantially increased oxidation resistance up to ∼460 °C, ∼510 °C, and ∼490 °C, respectively, compared to ∼400 °C for pure WB4.

Stabilization of HfB12 in Y1–xHfxB12 under Ambient Pressure

Alloys of metal dodecaborides-YB12 with HfB12-were prepared via arc-melting in order to stabilize the metastable HfB12 high-pressure phase under ambient pressure. Previously, HfB12 had been synthesized only under high-pressure (6.5 GPa). Powder X-ray diffraction (PXRD) and energy-dispersive X-ray spectroscopy (EDS) were used to confirm the purity and phase composition of the prepared samples. The solubility limit for HfB12 in Y1-xHfxB12 (cubic UB12 structure type) was determined to be ∼35 at. % Hf by PXRD and EDS analysis. The value of the cubic unit cell parameter (a) changed from 7.505 Å (pure YB12) to 7.454 Å across the solid solution range. Vickers hardness increased from 40.9 ± 1.6 GPa for pure YB12 to 45.0 ± 1.9 GPa under an applied load of 0.49 N for the Y1-xHfxB12 solid solution composition with ∼28 at. % Hf, suggesting both solid solution hardening and extrinsic hardening due to the formation of secondary phases of hafnium.

Superhard W0.5Ta0.5B nanowires prepared at ambient pressure

The primary focus of superhard materials development has relied on chemical tuning of the crystal structure. While these intrinsic effects are invaluable, there is a strong possibility that hardness can be dramatically enhanced using extrinsic effects. Here, we demonstrate that the superhard metal W0.5Ta0.5B can be prepared as nanowires through flux growth. The aspect ratios of the nanowires are controlled by the concentration of boride in molten aluminum, and the nanowires grow along the boron-boron chains, confirmed via electron diffraction. This morphology inherently results from the crystal habit of borides and can inspire the development of other nanostructured materials.