Michel O. S. Dantas

Silicon Field-Emission Devices Fabricated Using the Hydrogen Implantation–Porous Silicon (HI–PS) Micromachining Technique

This paper presents a relatively simple method to fabricate field-emitter arrays from silicon substrates. These devices are obtained from silicon micromachining by means of the HI-PS technique - a combination of hydrogen ion implantation and porous silicon used as sacrificial layer. Also, a new process sequence is proposed and implemented to fabricate self-aligned integrated field-emission devices based on this technique. Electrical characteristics of the microtips obtained show good agreement with the Fowler-Nordheim theory, which are suitable for the proposed application.

Silicon micromechanical structures fabricated by electrochemical process

Silicon (Si) micromechanical structures were fabricated by means of sacrificial layers defined with porous silicon (PS) and masked by hydrogen ion implantation with adequate thermal annealing. The fabrication process to remove the PS layers with diluted KOH at room temperature does not cause damage in remaining Si microstructures which have less than 1 /spl mu/m thickness controlled by the anodization time.

P1.4.9 Improvement of Si Field Emission Sensors Fabrication Technology by Carbon Nanotubes

Field Emission (FE) devices were successfully improved by the association of silicon (Si) microtips and Multi-Walled Carbon Nanotubes (MWCNTs). MWCNTs were deposited over Si microtips by Electrophoretic Deposition (EPD), and improvements up to 80% in electron emission characteristics were reported, being suitable for the development of gas ionization sensors based on FE devices.