Michiaki Hiyoshi
Toshiba
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Publication
Featured researches published by Michiaki Hiyoshi.
Electrical Engineering in Japan | 2000
Hideo Matsuda; Noriyasu Kawamura; Michiaki Hiyoshi; Satoshi Teramae; Kazunobu Nishitani
A newly developed press packed reverse conducting IGBT (RCIGBT), the ST1000EX21, having ratings of 2500 V and 1000 A, has successfully been introduced in high-reliability application areas. A multiple-chip press packed RCIGBT structure, containing IGBT chips and fast recovery diode (FRD) chips, has been achieved by using basic experimental results and a stress analysis using the finite element structure analysis program ABAQUS. Excellent electrical characteristics, especially a robust turn-off capability, such as Ic = 5000 A, Vcp = 2800 V at Tj = 125 °C, have been obtained. High reliability, withstanding a thermal cycling (fatigue) test of more than 50,000 cycles and a high-temperature voltage blocking test for 2000 hours, has been confirmed. The device is now available and is being successfully used for transportation systems and other applications that require high reliability and long-term stability. Voltage and current ratings in IGBTs and IEGTs (Injection Enhanced Gate Transistors) will be raised in the future.
Archive | 1996
Satoshi Yanagisawa; Michiaki Hiyoshi
Archive | 2004
Michiaki Hiyoshi
Archive | 2001
Michiaki Hiyoshi
Archive | 1996
Satoshi Teramae; Michiaki Hiyoshi
Archive | 1994
Michiaki Hiyoshi; Takashi Fujiwara; Hideo Matsuda; Satoshi Yanagisawa; Susumu Iesaka; Tatuo Harada
Archive | 1995
Michiaki Hiyoshi; Satoshi Teramae; 智 寺前; 道明 日吉
Archive | 1990
Hideo Matsuda; Susumu Iesaka; Takashi Fujiwara; Michiaki Hiyoshi; Hisashi Suzuki
Archive | 2002
Michiaki Hiyoshi; Shigeru Hasegawa; Naoyuki Inoue; Tatsuo Harada
Archive | 2001
Michiaki Hiyoshi; Takahiro Kono; Ikuko Onitake; 道明 日吉; 孝弘 河野; 郁子 鬼武
