Miguel A. Caro

Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides

We present a theory of local electric polarization in crystalline solids and apply it to study the case of wurtzite group-III nitrides. We show that a local value of the electric polarization, evaluated at the atomic sites, can be cast in terms of a summation over nearest-neighbor distances and Born effective charges. Within this model, the local polarization shows a direct relation to internal strain and can be expressed in terms of internal strain parameters. The predictions of the present theory show excellent agreement with a formal Berry phase calculation for random distortions of a test-case CuPt-like InGaN alloy and InGaN supercells with randomly placed cations. While the present level of theory is appropriate for highly ionic compounds, we show that a more complex model is needed for less ionic materials, in which the strain dependence of Born effective charges has to be taken into account. Moreover, we provide ab initio parameters for GaN, InN and AlN, including hybrid functional values for the piezoelectric coefficients and the spontaneous polarization, which we use to accurately implement the local theory expressions. In order to calculate the local polarization potential, we also present a point dipole method. This method overcomes several limitations related to discretization and resolution which arise when obtaining the local potential by solving Poissons equation on an atomic grid. Finally, we perform tight-binding supercell calculations to assess the impact of the local polarization potential arising from alloy fluctuations on the electronic properties of InGaN alloys. In particular, we find that the large upward bowing with composition of the InGaN valence band edge is strongly influenced by local polarization effects. Furthermore, our analysis allows us to extract composition-dependent bowing parameters for the energy gap and valence and conduction band edges.

Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

We present an atomistic description of the electronic and optical properties of

Piezoelectric coefficients and spontaneous polarization of ScAlN

{\text{In}}_{0.25}{\text{Ga}}_{0.75}\mathrm{N}/\mathrm{GaN}

Structural, electronic and optical properties of m-plane (In,Ga)N/GaN quantum wells: Insights from experiment and atomistic theory

quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field fluctuations as well as Coulomb effects. We find a strong hole and much weaker electron wave function localization in InGaN random alloy quantum wells. The presented calculations show that while the electron states are mainly localized by well-width fluctuations, the holes states are already localized by random alloy fluctuations. These localization effects affect significantly the quantum well optical properties, leading to strong inhomogeneous broadening of the lowest interband transition energy. Our results are compared with experimental literature data.

Orbital-free density functional theory implementation with the projector augmented-wave method

We present a computational study of spontaneous polarization and piezoelectricity in Sc(x)Al(1-x)N alloys in the compositional range from x = 0 to x = 0.5, obtained in the context of density functional theory and the Berry-phase theory of electric polarization using large periodic supercells. We report composition-dependent values of piezoelectric coefficients e(ij), piezoelectric moduli d(ij) and elastic constants C(ij). The theoretical findings are complemented with experimental measurement of e33 for a series of sputtered ScAlN films carried out with a piezoelectric resonator. The rapid increase with Sc content of the piezoelectric response reported in previous studies is confirmed for the available data. A detailed description of the full methodology required to calculate the piezoelectric properties of ScAlN, with application to other complex alloys, is presented. In particular, we find that the large amount of internal strain present in ScAlN and its intricate relation with electric polarization make configurational sampling and the use of large supercells at different compositions necessary in order to accurately derive the piezoelectric response of the material.

Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study

In this paper we present a detailed analysis of the structural, electronic, and optical properties of an

Built-in field control in alloyed c-plane III-N quantum dots and wells

m

Comparison of stress and total energy methods for calculation of elastic properties of semiconductors

-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL spectrum consisted of a very broad PL line with a high degree of optical linear polarization. To understand the optical properties we have performed atomistic tight-binding calculations, and based on our initial atom probe tomography data, the model includes the effects of strain and built-in field variations arising from random alloy fluctuations. Furthermore, we included Coulomb effects in the calculations. Our microscopic theoretical description reveals strong hole wave function localization effects due to random alloy fluctuations, resulting in strong variations in ground state energies and consequently the corresponding transition energies. This is consistent with the experimentally observed broad PL peak. Furthermore, when including Coulomb contributions in the calculations we find strong exciton localization effects which explain the form of the PL decay transients. Additionally, the theoretical results confirm the experimentally observed high degree of optical linear polarization. Overall, the theoretical data are in very good agreement with the experimental findings, highlighting the strong impact of the microscopic alloy structure on the optoelectronic properties of these systems.

Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys

We present a computational scheme for orbital-free density functional theory (OFDFT) that simultaneously provides access to all-electron values and preserves the OFDFT linear scaling as a function of the system size. Using the projector augmented-wave method (PAW) in combination with real-space methods, we overcome some obstacles faced by other available implementation schemes. Specifically, the advantages of using the PAW method are twofold. First, PAW reproduces all-electron values offering freedom in adjusting the convergence parameters and the atomic setups allow tuning the numerical accuracy per element. Second, PAW can provide a solution to some of the convergence problems exhibited in other OFDFT implementations based on Kohn-Sham (KS) codes. Using PAW and real-space methods, our orbital-free results agree with the reference all-electron values with a mean absolute error of 10 meV and the number of iterations required by the self-consistent cycle is comparable to the KS method. The comparison of all-electron and pseudopotential bulk modulus and lattice constant reveal an enormous difference, demonstrating that in order to assess the performance of OFDFT functionals it is necessary to use implementations that obtain all-electron values. The proposed combination of methods is the most promising route currently available. We finally show that a parametrized kinetic energy functional can give lattice constants and bulk moduli comparable in accuracy to those obtained by the KS PBE method, exemplified with the case of diamond.

Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory

A combined experimental and theoretical study of the band gap of AlInN is presented, which confirms the breakdown of the virtual crystal approximation (VCA) for the conduction and valence band edges. Composition-dependent bowing parameters for these quantities are extracted. Additionally, composition-dependent band offsets for GaN/AlInN systems are provided. We show that local strain and built-in fields affect the band edges significantly, leading to optical polarization switching at a much lower In composition than expected from a VCA approach.