Mike Salib
Westinghouse Electric
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Publication
Featured researches published by Mike Salib.
IEEE Transactions on Electron Devices | 1992
Dale E. Dawson; Aditya Gupta; Mike Salib
Measurements of the temperature dependence of beta and V/sub BE/ were made on AlGaAs-GaAs HBTs and used to determine device thermal resistance. The measurements were CW and not switched or pulsed in order to have a simpler procedure. With base doping greater than 10/sup 19/ cm/sup -3/, HBTs have negligible base-width modulation (i.e., flat I/sub C/ versus V/sub CE/ characteristics) which makes CW thermal resistance measurement especially direct and simple. >
IEEE Microwave and Guided Wave Letters | 1993
Mike Salib; Aditya Gupta; Fazal Ali; Dale E. Dawson
A two-stage 6-18-GHz high-efficiency AlGaAs-GaAs HBT MMIC power amplifier has been designed and tested. At 7-V collector bias, this fully matched monolithic amplifier delivered an output power of 1.8+or-0.6 W over the band. The peak output power was 2.45 W at 13 GHz with an associated gain of 11.1 dB and 36.7% power-added efficiency (PAE). Amplifiers from five different wafers showed similar performance.<<ETX>>
IEEE Transactions on Microwave Theory and Techniques | 1994
Fazal Ali; Aditya Gupta; Mike Salib; Bradley W. Veasel; Dale E. Dawson
A two-stage, 8-14 GHz high-efficiency AlGaAs/GaAs HBT MMIC power amplifier has been designed and tested. At 7 V collector bias, this common-emitter monolithic amplifier has achieved 20 dB gain, 33 dBm (CW) output power, and >40% power-added efficiency over the 8-14 GHz band. The amplifier is designed for 25 /spl Omega/ input and output impedance, and all the matching networks, as well as biasing circuits, are contained within this HBT MMIC. To our knowledge, this is the highest efficiency, the highest gain, and the highest output power reported for any monolithic power amplifier covering a 6 GHz bandwidth in the X-Ku band. >
IEEE Microwave and Guided Wave Letters | 1993
Fazal Ali; Mike Salib; Aditya Gupta
A broadband, high-efficiency MMIC power amplifier has been developed using AlGaAs-GaAs heterojunction bipolar transistors (HBTs). At 7-V collector bias, the fully matched monolithic amplifier produced 31-dBm CW peak output power with 9.2-dB peak gain and 50% peak power-added efficiency in the 8-15-GHz band. Several amplifiers from five different wafers have ben successfully tested.<<ETX>>
IEEE Microwave and Guided Wave Letters | 1994
Mike Salib; Fazal Ali; Aditya Gupta; Burhan Bayraktaroglu; Dale E. Dawson
Four 0.25-W GaAs Heterojunction Bipolar Transistors (HBTs) were combined in a single-stage hybrid microstrip amplifier. An output power of minimum 1 Watt (W) was achieved over the 5.5-9.5 GHz band with >48% power-added efficiency (PAE). The peak PAE was 58% at 7 and 9.5 GHz with an average efficiency of 52% over the 5-10 GHz band. This result was reproduced on two more units with a minimum efficiency of 48% and an average efficiency of 51%. To our knowledge, this is the highest efficiency obtained from any 1-W amplifier covering 5-10 GHz bandwidth. >
IEEE Microwave and Guided Wave Letters | 1992
Mike Salib; Fazal Ali; Aditya Gupta; Dale E. Dawson
Four 0.25-W gallium arsenide heterojunction bipolar transistors (HBTs) were combined in a single-stage hybrid microstrip amplifier. An output power of >1 W was achieved over the 8.5-13.5-GHz band with >35% power-added efficiency (PAE). The peak PAE was 45.4% at 12.5 GHz. This result was repeated on a second unit that was subsequently tuned for improved performance at the upper end of the band. The PAE at 14 GHz increased to >43% with 1-W output while, at 8 GHz, it remained at approximately 30%.<<ETX>>
international microwave symposium | 1995
Fazal Ali; Aditya Gupta; Mike Salib; Brad Veasel
GaAs power HBTs are traditionally biased in Class A or Class AB mode for power amplifiers. This paper describes the tradeoffs of operating these devices in Class C bias. We find that power-added efficiency (PAE) improves and power gain decreases in Class C when compared to Class AB bias. At 6 GHz, the PAE increased by greater than 10 percentage points (from 68.9% in Class AB to 80.6% in Class C) with concurrent loss of 4.3 dB in power gain. The efficiency improves monotonically with lower operating frequency. In a single-tone environment, the second harmonic increases by /spl sim/7 dB in Class C over Class AB. To our knowledge, this is the first report on the experimental study of Class C operation of GaAs HBTs.<<ETX>>
IEEE Microwave and Guided Wave Letters | 1997
Burhan Bayraktaroglu; Mike Salib
The authors describe the performance of a thermally stabilized cascode-heterojunction bipolar transistor (TSC-HBT) that exhibits unconditional thermal stability without the use of ballast resistors. A thermal isolation inserted between the current source (CE stage) and the power stage (CB stage) eliminates the positive electrothermal feedback that causes thermal runaway in bipolar transistors. The TSC-HBT cell designs with f/sub max/ values in excess of 100 GHz demonstrated about 300% improvement in DC power dissipation capability compared to conventional cascode HBTs in a direct comparison.
Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium | 1994
Fazal Ali; Aditya Gupta; Mike Salib; Bradley W. Veasel; Dale E. Dawson
A two-stage, 8-14 GHz high efficiency AlGaAs/GaAs HBT MIMIC power amplifier has been designed and tested. At 7 V collector bias, this common-emitter monolithic amplifier has achieved 20 dB gain, 33 dBm (CW) output power and 40% power added efficiency over 8-14 GHz band. The amplifier is designed for a 25 ohm input and output impedance and all the matching networks, as well as biasing circuits, are contained within this HBT MMIC. To our knowledge, this is the highest efficiency, the highest gain and the highest output power reported for any monolithic power amplifier covering 6 GHz bandwidth in the X-Ku band.<<ETX>>
international microwave symposium | 1998
Mike Salib; Aditya Gupta; A. Ezis; M. Lee; M. Murphy
A monolithic power amplifier has been developed using GaAs/AlGaAs HBT technology. This amplifier uses cascode HBTs and provides /spl sim/3 W CW from 8 to 14 GHz with a power added efficiency of /spl sim/40% and a gain of /spl sim/15 dB. The cascode HBT is designed to be free of burnout problems associated with current collapse. Spurious signals at the output of the MMIC are kept /spl sim/50 dBc, worst case, and phase noise 1 kHz from the carrier is -130 to -140 dBc/Hz, better than that of comparable PHEMT amplifiers.
