Mikhail R. Baklanov

Comparative study of SiOCH low-k films with varied porosity interacting with etching and cleaning plasma

The interaction between conventional and highly porous SiOCH with CF4, O2, and H2 plasma has been investigated. The highly porous SiOCH film has porosity about 40% and a k value about 2.2. The pristine SiOCH film has 19% of porosity and k value of 2.7. All experiments were performed at room temperature in a downstream plasma reactor. It was found that (i) the CF4 plasma etches the SiOCH film without bulk material modification (however, the etch rate was higher in the case of the SiOCH film with increased porosity); (ii) the O2 plasma oxidizes the SiOCH film converting the top layer to a hydrophilic SiO2-like porous material, the SiOCH film with increased porosity suffers more severely from this kind of plasma; (iii) the CF4/O2 plasma mixture has an optimal O2 concentration at which the etch rate is maximal; and (iv) the H2 plasma does not interact with the SiOCH film and can be a promising candidate for the resist stripping.

Plasma processing of low-k dielectrics

This paper presents an in-depth overview of the present status and novel developments in the field of plasma processing of low dielectric constant (low-k) materials developed for advanced interconnects in ULSI technology. The paper summarizes the major achievements accomplished during the last 10 years. It includes analysis of advanced experimental techniques that have been used, which are most appropriate for low-k patterning and resist strip, selection of chemistries, patterning strategies, masking materials, analytical techniques, and challenges appearing during the integration. Detailed discussions are devoted to the etch mechanisms of low-k materials and their degradation during the plasma processing. The problem of k-value degradation (plasma damage) is a key issue for the integration, and it is becoming more difficult and challenging as the dielectric constant of low-k materials scales down. Results obtained with new experimental methods, like the small gap technique and multi-beams systems with separated sources of ions, vacuum ultraviolet light, and radicals, are discussed in detail. The methods allowing reduction of plasma damage and restoration of dielectric properties of damaged low-k materials are also discussed.

Non-destructive characterisation of porous low-k dielectric films

Characterization of pore structure is needed to develop and optimize low-k dielectric films and processes. Advanced non-destructive methods, such as ellipsometric porosimetry, small-angle neutron and X-ray scattering combined with specular X-ray reflectivity and positron annihilation lifetime spectroscopy have recently been developed for this purpose. In this paper, the results of comparative analysis of different instrumentations are presented. Fundamentals and applications of the ellipsometric porosimetry are analyzed in more detail.

Disorder-induced inhomogeneities of the superconducting state close to the superconductor-insulator transition.

Scanning tunneling spectroscopy at very low temperatures on homogeneously disordered superconducting titanium nitride thin films reveals strong spatial inhomogeneities of the superconducting gap Delta in the density of states. Upon increasing disorder, we observe suppression of the superconducting critical temperature Tc towards zero, enhancement of spatial fluctuations in Delta, and growth of the Delta/Tc ratio. These findings suggest that local superconductivity survives across the disorder-driven superconductor-insulator transition.

Characterization of Cu surface cleaning by hydrogen plasma

When a Cu surface is exposed to a clean room ambient, a surface layer containing Cu2O, CuO, Cu(OH)2, and CuCO3 is formed. Thermal treatment in a vacuum combined with hydrogen plasma can remove this layer. Water and carbon dioxide desorb during the thermal treatment and the hydrogen plasma reduces the remaining Cu oxide. Ellipsometric, x-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectroscopy analyses indicate that the mechanism of interaction of the H2 plasma with this layer depends on temperature. When the temperature is below 150 °C, H2 plasma cannot completely reduce Cu oxide. Hydrogen diffuses through the oxide and hydrogenation of the Cu layer is observed. The hydrogenated Cu surface has a higher resistance than a nontreated Cu layer. The hydrogen plasma efficiently cleans the Cu surface when the substrate temperature is higher than 150 °C. In this case, hydrogen atoms have enough activation energy to reduce Cu oxide and adsorbed water forms as a byproduct of Cu oxide reduction. When the wafer temperature is higher than 350 °C, the interaction of the Cu film with hydrogen and residual oxygen is observed.When a Cu surface is exposed to a clean room ambient, a surface layer containing Cu2O, CuO, Cu(OH)2, and CuCO3 is formed. Thermal treatment in a vacuum combined with hydrogen plasma can remove this layer. Water and carbon dioxide desorb during the thermal treatment and the hydrogen plasma reduces the remaining Cu oxide. Ellipsometric, x-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectroscopy analyses indicate that the mechanism of interaction of the H2 plasma with this layer depends on temperature. When the temperature is below 150 °C, H2 plasma cannot completely reduce Cu oxide. Hydrogen diffuses through the oxide and hydrogenation of the Cu layer is observed. The hydrogenated Cu surface has a higher resistance than a nontreated Cu layer. The hydrogen plasma efficiently cleans the Cu surface when the substrate temperature is higher than 150 °C. In this case, hydrogen atoms have enough activation energy to reduce Cu oxide and adsorbed water forms as a byproduct of Cu oxide reduc...

Superinsulator and quantum synchronization.

Synchronized oscillators are ubiquitous in nature, and synchronization plays a key part in various classical and quantum phenomena. Several experiments have shown that in thin superconducting films, disorder enforces the droplet-like electronic texture—superconducting islands immersed into a normal matrix—and that tuning disorder drives the system from superconducting to insulating behaviour. In the vicinity of the transition, a distinct state forms: a Cooper-pair insulator, with thermally activated conductivity. It results from synchronization of the phase of the superconducting order parameter at the islands across the whole system. Here we show that at a certain finite temperature, a Cooper-pair insulator undergoes a transition to a superinsulating state with infinite resistance. We present experimental evidence of this transition in titanium nitride films and show that the superinsulating state is dual to the superconducting state: it is destroyed by a sufficiently strong critical magnetic field, and breaks down at some critical voltage that is analogous to the critical current in superconductors.

Porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics: A comparative study

The low dielectric constant (k) of plasma enhanced chemical vapor deposited SiCOH films has been attributed to porosity in the films. We have shown previously that the dielectric constant of such materials can be extended from the typical k values of 2.7–2.9 to ultralow-k values of k=2.0. The reduction in the dielectric constants has been achieved by enhancing the porosity in the films through the addition of an organic material to the SiCOH precursor and annealing the films to remove the thermally less-stable organic fractions. In order to confirm the relation between dielectric constant and film porosity the latter has been evaluated for SiCOH films with k values from 2.8 to 2.05 using positron annihilation spectroscopy, positron annihilation lifetime spectroscopy, small angle x-ray scattering, specular x-ray reflectivity, and ellipsometric porosimetry measurements. It has been found that the SiCOH films with k=2.8 had no detectable porosity, however the porosity increased with decreasing dielectric con...

Porous low dielectric constant materials for microelectronics

Materials with a low dielectric constant are required as interlayer dielectrics for the on-chip interconnection of ultra-large-scale integration devices to provide high speed, low dynamic power dissipation and low cross-talk noise. The selection of chemical compounds with low polarizability and the introduction of porosity result in a reduced dielectric constant. Integration of such materials into microelectronic circuits, however, poses a number of challenges, as the materials must meet strict requirements in terms of properties and reliability. These issues are the subject of the present paper.

Localized superconductivity in the quantum-critical region of the disorder-driven superconductor-insulator transition in TiN thin films.

We investigate low-temperature transport properties of thin TiN superconducting films in the vicinity of the disorder-driven superconductor-insulator transition. In a zero magnetic field, we find an extremely sharp separation between superconducting and insulating phases, evidencing a direct superconductor-insulator transition without an intermediate metallic phase. At moderate temperatures, in the insulating films we reveal thermally activated conductivity with the magnetic field-dependent activation energy. At very low temperatures, we observe a zero-conductivity state, which is destroyed at some depinning threshold voltage V{T}. These findings indicate the formation of a distinct collective state of the localized Cooper pairs in the critical region at both sides of the transition.

Influence of absorbed water components on SiOCH low-k reliability

We investigated plasma treatment induced water absorption in a SiOCH low-k dielectric and the influence of the absorbed water components on the low-k dielectric reliability. By using thermal desorption spectroscopy (TDS), water absorption in SiOCH was evidenced for N2/H2 plasma treatments. Based on these TDS results, two anneal temperatures were selected to separate and quantify the respective contributions of two absorbed water components, physisorbed (α) and chemisorbed (β) water, to low-k dielectric reliability. With the physisorbed water desorbed by an anneal at 190 °C, the low-k dielectric shows reduced leakage currents and slightly improved time-dependent dielectric breakdown (TDDB) lifetimes. However, the observed failure mechanism represented by the TDDB thermal activation energy (Ea) does not change until the chemisorbed water component was desorbed by an anneal at 400 °C. The close similarity between Ea and the bond energy associated with the β water component demonstrates that the β bond is amo...