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Dive into the research topics where Miki Egami is active.

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Featured researches published by Miki Egami.


Journal of Applied Physics | 2005

Pore interconnectivity of nanoclustering silica porous films as studied by positronium time-of-flight spectroscopy

Kenji Ito; R.S. Yu; Kiminori Sato; Kouichi Hirata; Yoshinori Kobayashi; Toshikazu Kurihara; Miki Egami; Hiroki Arao; Akira Nakashima; Michio Komatsu

Positronium time-of-flight spectroscopy with improved stability and signal-to-noise ratio, achieved by a developed off-line digital data analysis, was applied to the characterization of three types of nanoclustering silica porous films with different relative dielectric constants and refractive indices. The emission of triplet ortho-positronium (o‐Ps) from the film surface was examined as a function of incident positron energy (Ein). It was found that the o‐Ps emission peak energies from two highly porous films with similar total porosities decrease similarly to each other with increasing Ein up to 1.50keV. On the other hand, o‐Ps emission intensities from the two films differed considerably in the range between 0.5keV<Ein<4keV, which reflects a difference in pore interconnectivity between the two films with different mean secondary particle sizes. Some interconnected pores are expected to be closed by the necking at the particle contacts as calcination proceeds, possibly leading to more necks in the pore...


MRS Proceedings | 1999

Film Properties of Low-Density and Ultra-Low-Dielectric-Constant Material

Ryo Muraguchi; Miki Egami; Hiroki Arao; Atsushi Tounai; Akira Nakashima; Michio Komatsu

We studied the effect of pore diameter on the film properties of low-density porous material with special interest in the pore diameter range below 5nm. A novel low-density material, Interpenetrated SOG (IPS), was designed to realize such porous character. It is composed of a pyrolic template, which is an organic olygomer, and framework, made from SOG polymer and silica sol, forming an interpenetrated structure. Thermal decomposition of the organic component successfully resulted in films with pore diameter range below 5nm. It is found that the dielectric constant and the pore diameter depended on the density and the film strength was affected by the average pore diameter. Practically, films with the average pore size below 5nm possessed dielectric constants as low as 2.2–2.0 and sufficient strength.


Archive | 2006

Coating liquid for forming low dielectric constant amorphous silica-based coating film and the coating film obtained from the same

Miki Egami; Hiroki Arao; Akira Nakashima; Michio Komatsu


Archive | 2005

Coating Liquid for Forming Low Dielectric Constant Amorphous Silica-Based Coating Film, Method for Preparing the Same, and Low Dielectric Constant Amorphous Silica-Based Coating Film Obtained From the Same

Hiroki Arao; Miki Egami; Akira Nakashima; Michio Komatsu


Archive | 2002

Process for producing semiconductor substrates

Miki Egami; Ryo Muraguchi


Archive | 1997

Coating fluid for low-permittivity silica coating and substrate provided with low-permittivity coating

Miki Egami; Michio Catalysts Chemicals Ind. Co Ltd Komatsu; Akira Nakashima


Archive | 2002

Process for producing semiconductor substrates and semiconductor substrates

Miki Egami; Ryo Muraguchi


Archive | 2006

COATING LIQUID FOR FORMING LOW DIELECTRIC CONSTANT AMORPHOUS SILICA COATING FILM AND LOW DIELECTRIC CONSTANT AMORPHOUS SILICA COATING FILM OBTAINED FROM SUCH COATING LIQUID

Miki Egami; Hiroki Arao; Akira Nakashima; Michio Komatsu


Archive | 2000

Method of forming a silica-containing coating film with a low dielectric constant and semiconductor substrate coated with such a film

Michio Komatsu; Akira Nakashima; Miki Egami; Ryo Muraguchi


Archive | 2005

Coating liquid for formation of protective film for semiconductor processing, method for preparation of the same, and protective film for semiconductor processing made from the coating liquid

Miki Egami; Hiroki Arao; Akira Nakashima; Michio Komatsu

Collaboration


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Kenji Ito

National Institute of Advanced Industrial Science and Technology

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Kouichi Hirata

National Institute of Advanced Industrial Science and Technology

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Yoshinori Kobayashi

National Institute of Advanced Industrial Science and Technology

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R.S. Yu

Chinese Academy of Sciences

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Hisashi Togashi

National Institute of Advanced Industrial Science and Technology

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Kiminori Sato

Tokyo Gakugei University

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Ryoichi Suzuki

National Institute of Advanced Industrial Science and Technology

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Toshiyuki Ohdaira

National Institute of Advanced Industrial Science and Technology

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