Min-chul Suh

Photocurrent of undoped, n- and p-type Si nanowires synthesized by thermal chemical vapor deposition

Photocurrent of undoped, n- and p-type Si nanowires synthesized by thermal chemical vapor deposition is investigated in this study. For an undoped Si nanowire biased at 3 V, photocurrent excited by the 633-nm wavelength light is stronger in intensity than that excited by the 325-nm wavelength light, and photoresponses are rapid when the light is switched on and off. In contrast, for the n- and p-type Si nanowires, photocurrent excited by the 633-nm wavelength light is not measurable, although one excited by 325-nm wavelength light is still detectable. And photoresponses obtained for the doped Si nanowires are slower, compared with the undoped Si nanowire. Photocurrent phenomena observed in the undoped, n- and p-type Si nanowires are discussed in this paper.

54.4: Highly Efficient and Wide Color Gamut White OLED Architecture for Display Application

Highly efficient WOLEDs, with the efficiencies of 19 cd/A, 16 cd/A, and 33 cd/A and CIE color coordinates of (0.25, 0.35), (0.30, 0.32), and (0.30, 0.32) respectively, have been developed. The broad white emitting TE-WOLEDs for high resolution display have been realized by controlling the microcavity between the cathode and anode. 96 % of NTSCx,y ratio was achieved from the TE-WOLED with the optical path control layer (OPCL) and new green color filter (CF).