Min Hwan Lee

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

Resistance switching in metal oxides could form the basis for next-generation non-volatile memory. It has been argued that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only indirectly, limiting our understanding of the switching mechanism. Here, we use high-resolution transmission electron microscopy to probe directly the nanofilaments in a Pt/TiO(2)/Pt system during resistive switching. In situ current-voltage and low-temperature (approximately 130 K) conductivity measurements confirm that switching occurs by the formation and disruption of Ti(n)O(2n-1) (or so-called Magnéli phase) filaments. Knowledge of the composition, structure and dimensions of these filaments will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films, and help guide research into the stability and scalability of such films for applications.

A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure

The detailed mechanism of electronic bipolar resistance switching (BRS) in the Pt/TiO(2)/Pt structure was examined. The conduction mechanism analysis showed that the trap-free and trap-mediated space-charge-limited conduction (SCLC) governs the low and high resistance state of BRS, respectively. The SCLC was confirmed by fitting the current-voltage characteristics of low and high resistance states at various temperatures. The BRS behavior originated from the asymmetric potential barrier for electrons escaping from, and trapping into, the trap sites with respect to the bias polarity. This asymmetric potential barrier was formed at the interface between the trap layer and trap-free layer. The detailed parameters such as trap density, and trap layer and trap-free layer thicknesses in the electronic BRS were evaluated. This showed that the degradation in the switching performance could be understood from the decrease and modified distribution of the trap densities in the trap layer.

A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays

This study examined the properties of Schottky-type diodes composed of Pt/TiO(2)/Ti, where the Pt/TiO(2) and TiO(2)/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of approximately 10(9) was achieved at 1 V when the TiO(2) film thickness was 19 nm. TiO(2) film was grown by atomic layer deposition at a substrate temperature of 250 degrees C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to < 10 A cm(-2) for a large electrode (an area of approximately 60 000 microm(2)). However, the local current measurement showed a local forward current density as high as approximately 10(5) A cm(-2). Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.

Ionic and electronic impedance imaging using atomic force microscopy

Localized alternating current (ac) impedance measurements are acquired directly through a conductive atomic force microscope (AFM) tip. Both a spectroscopy mode (where full impedance spectra are obtained at fixed locations on a sample surface) and an imaging mode (where single frequency impedance maps are acquired across a sample) are used to characterize Au/Si3N4 test structures, ZnO varistors, and Nafion membrane (an ion conductor). Both modulus and phase information are acquired simultaneously. The use of an ac technique permits the study of electrochemical systems and ion conductors in addition to electronic systems. The capabilities and limitations of the AFM impedance imaging technique are discussed in detail.

Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures

This study examined the effects of electrical forming methods on the bipolar resistance switching (BRS) behavior in Pt/TiO(2)/Pt sandwich structures. The BRS is confined to a region near the ruptured end of conducting nanofilaments, which are composed of a Ti(n)O(2n-1) Magnéli phase formed by electroforming. The intermediate phase with an oxygen vacancy concentration between the insulating TiO(2) and the residual conducting filament that formed at the interface region was considered to be the switching layer (SL). The change in filament shape caused by a variation in the compliance current during filament formation resulted in a different filament rupture location and SL configuration. Precise control of the filament formation and rupture process resulted in SLs connected in an anti-parallel configuration. It was possible to reconfigure the SLs in the same fashion without any restraints, which allowed an unlimited memristive operation to be achieved. This paper presents a new technique in voltage sweep mode that applies a compliance current as a tool to achieve a memristor with unlimited operation.

Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots

Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric-field distribution can solve the non-uniformity issue of future ReRAM.

Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy

The electrical conduction mechanism within a resistive switching TiO2 film in its bipolar high resistance state was examined by ac impedance spectroscopy and dc current-voltage measurements. Bipolar switching, which can be initiated from a unipolar high resistance state, was attributed to both modulation of the Schottky barrier height at the film-electrode interface and the electronic energy state in the film. Numerical fittings of the impedance data revealed two distinct RC domains in series, which were attributed to an interfacial barrier (activation energy ∼0.1 eV) and a nonconducting layer (activation energy ∼0.5 eV), respectively.

Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell

A tri-stable memristive switching was demonstrated on a Pt/TiO₂/Pt device and its underlying mechanism was suggested through a series of electrical measurements. Tri-stable switching could be initiated from a device in unipolar reset status. The unipolar reset status was obtained by performing an electroforming step on a pristine cell which was then followed by unipolar reset switching. It was postulated that tri-stable switching occurred at the location where the conductive filament (initially formed by the electroforming step) was ruptured by a subsequent unipolar reset process. The mechanism of the tri-stable memristive switching presented in this article was attributed to the migration of oxygen ions through the ruptured filament region and the resulting modulation of the Schottky-like interfaces. The assertion was further supported by a comparison study performed on a Pt/TiO₂/TiO(2-x)/Pt cell.

Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments

A modified biasing scheme was adopted to improve the electrical endurance characteristics of conducting filamentary resistive switching (RS) in a Pt/TiO2/Pt RS cell. The modified bias scheme included the application of bias voltages with alternating polarity, even though RS proceeds in non-polar mode, which results in the stable distribution of each resistance states as well as improved endurance. This was attributed to the minimized consumption of oxygen ions in the TiO2 film, which can be induced by the formation of hourglass-shaped conducting filament (HSCF). The presence of a HSCF was confirmed by high-resolution transmission electron microscopy.

Electrochemical nanopatterning of Ag on solid-state ionic conductor RbAg4I5 using atomic force microscopy

This report introduces an electrochemical nanopatterning technique performed under ambient conditions without involving a liquid vessel or probe-to-sample material transfer. Patterning is accomplished by solid-state electrochemical nanodeposition of Ag clusters on the surface of the solid ionic conductor RbAg4I5 using an atomic force microscopy probe. Application of negative voltage pulses on the probe relative to an Ag film counter electrode on an RbAg4I5 sample induces nanometer-sized Ag deposition on the ion conductor around the probe. The patterned Ag particles are 0.5–70nm high and 20–700nm in diameter. The effect of the amplitude and duration of bias voltage on the size and shape of deposited Ag clusters is also shown.