Min Soo Hwang

A double-strip plasmonic waveguide coupled to an electrically driven nanowire LED.

We demonstrate the efficient integration of an electrically driven nanowire (NW) light source with a double-strip plasmonic waveguide. A top-down-fabricated GaAs NW light-emitting diode (LED) is placed between two straight gold strip waveguides with the gap distance decreasing to 30 nm at the end of the waveguide and operated by current injection through the p-contact electrode acting as a plasmonic waveguide. Measurements of polarization-resolved images and spectra show that the light emission from the NW LED was coupled to a plasmonic waveguide mode, propagated through the waveguide, and was focused onto a subwavelength-sized spot of surface plasmon polaritons at the tapered end of the waveguide. Numerical simulation agreed well with these experimental results, confirming that a symmetric plasmonic waveguide mode was excited on the top surface of the waveguide. Our demonstration of a plasmonic waveguide coupled to an electrically driven NW LED represents important progress toward further miniaturization and practical implementation of ultracompact photonic integrated circuits.

Direct observation of exceptional points in coupled photonic-crystal lasers with asymmetric optical gains.

Although counter-intuitive features have been observed in non-Hermitian optical systems based on micrometre-sized cavities, the achievement of a simplified but unambiguous approach to enable the efficient access of exceptional points (EPs) and the phase transition to desired lasing modes remains a challenge, particularly in wavelength-scale coupled cavities. Here, we demonstrate coupled photonic-crystal (PhC) nanolasers with asymmetric optical gains, and observe the phase transition of lasing modes at EPs through tuning of the area of graphene cover on one PhC cavity and systematic scanning photoluminescence measurements. As the gain contrast between the two identical PhC cavities exceeds the intercavity coupling, the phase transition occurs from the bonding/anti-bonding lasing modes to the single-amplifying lasing mode, which is confirmed by the experimental measurement of the mode images and the theoretical modelling of coupled cavities with asymmetric gains. In addition, we demonstrate active tuning of EPs by controlling the optical loss of graphene through electrical gating.

A high-resolution strain-gauge nanolaser

Interest in mechanical compliance has been motivated by the development of flexible electronics and mechanosensors. In particular, studies and characterization of structural deformation at the fundamental scale can offer opportunities to improve the device sensitivity and spatiotemporal response; however, the development of precise measurement tools with the appropriate resolution remains a challenge. Here we report a flexible and stretchable photonic crystal nanolaser whose spectral and modal behaviours are sensitive to nanoscale structural alterations. Reversible spectral tuning of ∼26 nm in lasing wavelength, with a sub-nanometre resolution of less than ∼0.6 nm, is demonstrated in response to applied strain ranging from −10 to 12%. Instantaneous visualization of the sign of the strain is also characterized by exploring the structural and corresponding modal symmetry. Furthermore, our high-resolution strain-gauge nanolaser functions as a stable and deterministic strain-based pH sensor in an opto-fluidic system, which may be useful for further analysis of chemical/biological systems.

Switching of Photonic Crystal Lasers by Graphene

Unique features of graphene have motivated the development of graphene-integrated photonic devices. In particular, the electrical tunability of graphene loss enables high-speed modulation of light and tuning of cavity resonances in graphene-integrated waveguides and cavities. However, efficient control of light emission such as lasing, using graphene, remains a challenge. In this work, we demonstrate on/off switching of single- and double-cavity photonic crystal lasers by electrical gating of a monolayer graphene sheet on top of photonic crystal cavities. The optical loss of graphene was controlled by varying the gate voltage Vg, with the ion gel atop the graphene sheet. First, the fundamental properties of graphene were investigated through the transmittance measurement and numerical simulations. Next, optically pumped lasing was demonstrated for a graphene-integrated single photonic crystal cavity at Vg below -0.6 V, exhibiting a low lasing threshold of ∼480 μW, whereas lasing was not observed at Vg above -0.6 V owing to the intrinsic optical loss of graphene. Changing quality factor of the graphene-integrated photonic crystal cavity enables or disables the lasing operation. Moreover, in the double-cavity photonic crystal lasers with graphene, switching of individual cavities with separate graphene sheets was achieved, and these two lasing actions were controlled independently despite the close distance of ∼2.2 μm between adjacent cavities. We believe that our simple and practical approach for switching in graphene-integrated active photonic devices will pave the way toward designing high-contrast and ultracompact photonic integrated circuits.

Low-threshold photonic-band-edge laser using iron-nail-shaped rod array

We report the experimental demonstration of an optically pumped rod-type photonic-crystal band-edge laser. Lasing operation was achieved with a low threshold of ~90 μW and a peak wavelength of 1451.5 nm at room temperature.

Photon-triggered nanowire transistors

Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either all-optical transistors in which photons control other photons or phototransistors with the gate response tuned or enhanced by photons. However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 × 106. A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.

Metal-Coated Silicon Nanowire Plasmonic Waveguides

We report that a metal-coated silicon nanowire functions as a plasmonic waveguide. Measurements showed that plasmonic waveguide modes propagated efficiently through a chemically synthesized silicon nanowire with a diameter of ~80 nm coated with silver. The propagation lengths for transverse-magnetic and transverse-electric modes were estimated to be ~8.05 and ~6.61 µm, respectively. Numerical simulations of the propagation length and mode profile of each plasmonic waveguide mode agreed with the experimental results. These plasmonic waveguides with highly smooth surfaces, fabricated through a bottom-up approach, represent a meaningful step toward the demonstration of an ultracompact subwavelength-scale plasmonic integrated circuit.

Performance optimization in gate-tunable Schottky junction solar cells with a light transparent and electric-field permeable graphene mesh on n-Si

Gate-tunable Schottky junction solar cells (SJSCs) based on graphene and graphene mesh electrodes on n-type Si are fabricated and the effect of the external gate voltage (Vg) on the photovoltaic characteristics is investigated. The power conversion efficiencies (PCEs) of both devices continuously increase with increasing absolute values of Vg. Importantly, despite the slightly lower PCE values at Vg = 0 V, the graphene mesh on Si SJSC shows more rapid enhancement of PCE values, from 5.7% to 8.1%, with Vg varied from 0 V to −1 V. The finite element simulation highlights the benefits of the graphene mesh electrodes from the non-uniform and dynamic modulation of potential distributions driven correlatively by a work function change in the graphene regions and electric-field penetration through the hole regions.

Electrical modulation of a photonic crystal band-edge laser with a graphene monolayer

The electrical control of photonic crystal (PhC) lasers has been an attractive but challenging issue. Laser operation by electrical injection is of key importance for the viability and applicability of the PhC lasers. Another key factor is the electrical modulation of the laser output. The Fermi level of a graphene monolayer can be controlled by electrical gating, which adjusts its optical absorption. In this study, a graphene monolayer sheet is integrated on top of a two-dimensional PhC structure composed of InGaAsP multiple-quantum-wells (MQWs) in order to demonstrate the electrical modulation of a high-power (microwatt-scale) PhC band-edge laser. The introduced dielectric spacer layer presets the delicate balance between the optical gain from the MQWs and optical loss at the graphene monolayer. The proposed device is covered by an ion-gel film, which enables a low-voltage laser modulation at |Vg|≤1 V. The modulation is extensively investigated experimentally, and the obtained results are confirmed by performing numerical simulations.