Mine Toshiyuki | Researchain

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Featured researches published by Mine Toshiyuki.

IEICE Technical Report; IEICE Tech. Rep. | 2009

Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode

Sasago Yoshitaka; Kinoshita Masaharu; Morikawa Takahiro; Kurotsuchi Kenzo; Hanzawa Satoru; Mine Toshiyuki; Shima Akio; Fujisaki Yoshihisa; Kume Hitoshi; Moriya Hiroshi; Takaura Norikatsu; Torii Kazuyoshi

Archive | 2005

Semiconductor memory device and method for making same

Ishii Tomoyuki; Mine Toshiyuki; Sasago Yoshitaka; Osabe Taro

Archive | 2004

SEMICONDUCTOR MEMORY ELEMENT, SEMICONDUCTOR MEMORY DEVICE, AND CONTROL METHOD THEREOF

Sano Toshiaki; Ishii Tomoyuki; Yano Kazuo; Mine Toshiyuki

IEICE Technical Report; IEICE Tech. Rep. | 2011

Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking

Sasago Yoshitaka; Kinoshita Masaharu; Minemura Hiroyuki; Anzai Yumiko; Tai Mitsuharu; Kurotsuchi Kenzo; Morita Seiichi; Takahashi Toshikazu; Takahama Takashi; Morimoto Tadao; Mine Toshiyuki; Shima Akio; Kobayashi Takashi

Archive | 2007

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING

Ishii Tomoyuki; Sasago Yoshitaka; Kurata Hideaki; Mine Toshiyuki

Archive | 1996

SEMICONDUCTOR STORAGE ELEMENT, SEMICONDUCTOR STORAGE DEVICE AND THEIR MANUFACTURE AND CONTROL

Ishii Tomoyuki; Yano Kazuo; Seki Koichi; Mine Toshiyuki; Kobayashi Takashi

Archive | 2017

DEVICE MACHINING METHOD AND DEVICE MACHINING APPARATUS

Sugii Nobuyuki; Machida Shuntaro; Mine Toshiyuki; Watanabe Keiji; Fujisaki Koji; Kawamura Tetsufumi; Ryuzaki Daisuke; Miura Katsuya; Kinoshita Masaharu

IEICE Technical Report; IEICE Tech. Rep. | 2012

Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes

Kinoshita Masaharu; Sasago Yoshitaka; Minemura Hiroyuki; Anzai Yumiko; Tai Mitsuharu; Fujisaki Yoshihisa; Kusaba Shuichi; Morimoto Tadao; Takahama Takashi; Mine Toshiyuki; Shima Akio; Yonamoto Yoshiki; Kobayashi Takashi

Archive | 2004