Ming Hao Liu

Snake trajectories in ultraclean graphene p–n junctions

Snake states are trajectories of charge carriers curving back and forth along an interface. There are two types of snake states, formed by either inverting the magnetic field direction or the charge carrier type at an interface. The former has been demonstrated in GaAs–AlGaAs heterostructures, whereas the latter has become conceivable only with the advance of ballistic graphene where a gap-less p–n interface governed by Klein tunnelling can be formed. Such snake states were hidden in previous experiments due to limited sample quality. Here we report on magneto-conductance oscillations due to snake states in a ballistic suspended graphene p–n junction, which occur already at a very small magnetic field of 20 mT. The visibility of 30% is enabled by Klein collimation. Our finding is firmly supported by quantum transport simulations. We demonstrate the high tunability of the device and operate it in different magnetic field regimes.

Fabry-Pérot interference in gapped bilayer graphene with broken anti-Klein tunneling.

We report the experimental observation of Fabry-Pérot interference in the conductance of a gate-defined cavity in a dual-gated bilayer graphene device. The high quality of the bilayer graphene flake, combined with the devices electrical robustness provided by the encapsulation between two hexagonal boron nitride layers, allows us to observe ballistic phase-coherent transport through a 1-μm-long cavity. We confirm the origin of the observed interference pattern by comparing to tight-binding calculations accounting for the gate-tunable band gap. The good agreement between experiment and theory, free of tuning parameters, further verifies that a gap opens in our device. The gap is shown to destroy the perfect reflection for electrons traversing the barrier with normal incidence (anti-Klein tunneling). The broken anti-Klein tunneling implies that the Berry phase, which is found to vary with the gate voltages, is always involved in the Fabry-Pérot oscillations regardless of the magnetic field, in sharp contrast with single-layer graphene.

Spin-dependent Klein tunneling in graphene: Role of Rashba spin-orbit coupling

Within an effective Dirac theory the low-energy dispersions of monolayer graphene in the presence of Rashba spin-orbit coupling and spin-degenerate bilayer graphene are described by formally identical expressions. We explore implications of this correspondence for transport by choosing chiral tunneling through pn and pnp junctions as a concrete example. A real-space Green’s funct ion formalism based on a tight-binding model is adopted to perform the ballistic transport calculations, w hich cover and confirm previous theoretical results based on the Dirac theory. Chiral tunneling in monolayer graphene in the presence of Rashba coupling is shown to indeed behave like in bilayer graphene. Combined effects of a forbidden normal transmission and spin separation are observed within the single-band n ↔ p transmission regime. The former comes from realspin conservation, in analogy with pseudospin conservation in bilayer graphene, while the latter arises from the intrinsic spin-Hall mechanism of the Rashba coupling. PACS numbers: 72.80.Vp, 72.25.‐b, 73.23.‐b, 73.40.Gk

Persistent spin helix in Rashba-Dresselhaus two-dimensional electron systems

A persistent spin helix (PSH) in spin-orbit-coupled two-dimensional electron systems was recently predicted to exist in two cases: [001] quantum wells (QWs) with equal coupling strengths of the Rashba and the Dresselhaus interactions (RD), and Dresselhaus-only [110] QWs. Here we present supporting results and further investigations, using our previous results [Phys. Rev. B 72, 153305 (2005)]. Refined PSH patterns for both RD [001] and Dresselhaus [110] QWs are shown, such that the feature of the helix is clearly seen. We also discuss the time dependence of spin to reexamine the origin of the predicted persistence of the PSH. For the RD [001] case, we further take into account the random Rashba effect, which is much more realistic than the constant Rashba model. The distorted PSH pattern thus obtained suggests that such a PSH may be more observable in the Dresselhaus [110] QWs, if the dopants cannot be regularly enough distributed.A quantum world-line Monte Carlo method for high-symmetrical quantum models is proposed. Firstly, based on a representation of a partition function using the Matsubara formula, the principle of quantum world-line Monte Carlo methods is briefly outlined and a new algorithm using non-binary loops is given for quantum models with high symmetry as SU(N). The algorithm is called non-binary loop algorithm because of non-binary loop updatings. Secondary, one example of our numerical studies using the non-binary loop updating is shown. It is the problem of the ground state of two-dimensional SU(N) anti-ferromagnets. Our numerical study confirms that the ground state in the small N<= 4 case is a magnetic ordered Neel state, but the one in the large N>= 5 case has no magnetic order, and it becomes a dimer state.

Guiding of Electrons in a Few-Mode Ballistic Graphene Channel.

In graphene, the extremely fast charge carriers can be controlled by electron-optical elements, such as waveguides, in which the transmissivity is tuned by the wavelength. In this work, charge carriers are guided in a suspended ballistic few-mode graphene channel, defined by electrostatic gating. By depleting the channel, a reduction of mode number and steps in the conductance are observed, until the channel is completely emptied. The measurements are supported by tight-binding transport calculations including the full electrostatics of the sample.

Gate tuneable beamsplitter in ballistic graphene

We present a beam splitter in a suspended, ballistic, multiterminal, bilayer graphene device. By using local bottomgates, a p-n interface tilted with respect to the current direction can be formed. We show that the p-n interface acts as a semi-transparent mirror in the bipolar regime and that the reflectance and transmittance of the p-n interface can be tuned by the gate voltages. Moreover, by studying the conductance features appearing in magnetic field, we demonstrate that the position of the p-n interface can be moved by 1 μm. The herein presented beamsplitter device can form the basis of electron-optic interferometers in graphene.

Edge state effects in junctions with graphene electrodes

We consider plane junctions with graphene electrodes, which are formed by a single-level system (“molecule”) placed between the edges of two single-layer graphene half planes. We calculate the edge Green functions of the electrodes and the corresponding lead self-energies for the molecular levels in the cases of semi-infinite single-layer electrodes with armchair and zigzag edges. We show two main effects: first, a peculiar energy-dependent level broadening, reflecting at low energies the linear energy dependence of the bulk density of states in graphene, and, second, the shift and splitting of the molecular level energy, especially pronounced in the case of the zigzag edges due to the influence of the edge states. These effects give rise to peculiar conductance features at finite bias and gate voltages.

Creating and Steering Highly Directional Electron Beams in Graphene

We put forward a concept to create highly collimated, nondispersive electron beams in pseudorelativistic Dirac materials such as graphene or topological insulator surfaces. Combining negative refraction and Klein collimation at a parabolic pn junction, the proposed lens generates beams, as narrow as the focal length, that stay focused over scales of several microns and can be steered by a magnetic field without losing collimation. We demonstrate the lens capabilities by applying it to two paradigmatic settings of graphene electron optics: We propose a setup for observing high-resolution angle-dependent Klein tunneling, and, exploiting the intimate quantum-to-classical correspondence of these focused electron waves, we consider high-fidelity transverse magnetic focusing accompanied by simulations for current mapping through scanning gate microscopy. Our proposal opens up new perspectives for next-generation graphene electron optics experiments.

Theory of carrier density in multigated doped graphene sheets with quantum correction

The quantum capacitance model is applied to obtain an exact solution for the space-resolved carrier density in a multigated doped graphene sheet at zero temperature, with quantum correction arising from the finite electron capacity of the graphene itself taken into account. The exact solution is demonstrated to be equivalent to the self-consistent Poisson-Dirac iteration method by showing an illustrative example, where multiple gates with irregular shapes and a nonuniform dopant concentration are considered. The solution therefore provides a fast and accurate way to compute spatially varying carrier density, on-site electric potential energy, as well as quantum capacitance for bulk graphene, allowing for any kind of gating geometry with any number of gates and any types of intrinsic doping.

Towards superlattices: Lateral bipolar multibarriers in graphene

We report on transport properties of monolayer graphene with a laterally modulated potential profile, employing striped top gate electrodes with spacings of 100 to 200 nm. Tuning of top and back gate voltages gives rise to local charge carrier density disparities, enabling the investigation of transport properties either in the unipolar (nn′) or the bipolar (np′) regime. In the latter, pronounced single- and multibarrier Fabry-Perot (FP) resonances occur. We present measurements of different devices with different numbers of top gate stripes and spacings. The data are highly consistent with a phase coherent ballistic tight-binding calculation and quantum capacitance model, whereas a superlattice effect and modification of band structure can be excluded.