Mingsheng Xu

Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes

In recent years, GaN-based light-emitting diode (LED) has been widely used in various applications, such as RGB lighting system, full-colour display and visible-light communication. However, the internal quantum efficiency (IQE) of green LEDs is significantly lower than that of other visible spectrum LED. This phenomenon is called “green gap”. This paper briefly describes the physical mechanism of the low IQE for InGaN/GaN multiple quantum well (MQW) green LED at first. The IQE of green LED is limited by the defects and the internal electric field in MQW. Subsequently, we discuss the recent progress in improving the IQE of green LED in detail. These strategies can be divided into two categories. Some of these methods were proposed to enhance crystal quality of InGaN/GaN MQW with high In composition and low density of defects by modifying the growth conditions. Other methods focused on increasing electron-hole wave function overlap by eliminating the polarization effect.

Improved Efficiency of GaN-Based Green LED by a Nano-Micro Complex Patterned Sapphire Substrate

We demonstrate the enhancement of light extraction efficiency (LEE) of gallium-nitride (GaN)-based green light-emitting diode (LED) through a nano-micro complex patterned sapphire substrate (NMCPSS). The NMCPSS was prepared by inductively coupled plasma etching conventional microscale PSS with nickel nano-particles as the mask. The effect of NMCPSS on light output power of GaN-based green LED was investigated experimentally and numerically. The light output power at 20 mA of the LED grown on NMCPSS is 28.6% higher than that of LED grown on PSS. This is close to the value of 33.3% predicted by simulation. The results show that nano-micro complex PSS can further promote the LEE of GaN-based green LED compared with conventional PSS.

Effects of spectral parameters on the light properties of red-green-blue white light-emitting diodes.

Red-green-blue white light-emitting diodes (RGB-WLEDs) have great potential as commercial solid-state lighting devices, as well as visible light communication because of their high color-rendering index (CRI) and high response frequency. The quality of light of an RGB-WLED strongly depends on its spectral parameters. In this study, we fabricated RGB-WLEDs with red, blue, and green LEDs and measured the spectral power distribution (SPD). The experimental SPD is consistent with the calculated spectrum. We also measured the SPDs of LEDs with different peak wavelengths and extracted the spectral parameters, which were then used for modeling. We studied the effect of the wavelength and the full width at half-maximum (FWHM) on both the color rendering index and the luminous efficiency (LE) of the RGB-WLED using simulations. We find that the LE improves as the wavelength of the blue LED increases and the wavelength of the red LED decreases. When the wavelength of the green LED increases, the LE increases first, but later decreases. The CRI of the RGB-WLED increases with the wavelengths of the red, blue, and green LEDs first, but then decreases. The optimal wavelengths and FWHMs for maximum color-rendering and LE of the blue, green, and red LEDs are 466, 536, 606 nm; and 26.0, 34.0, and 19.5 nm, respectively.

Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer

We propose a graded indium composition p-type InGaN (p-InGaN) conduction layer to replace the p-type AlGaN electron blocking layer and a p-GaN layer in order to enhance the light output power of a GaN-based green light-emitting diode (LED). The indium composition of the p-InGaN layer decreased from 10.4% to 0% along the growth direction. The light intensity of the LED with a graded indium composition p-InGaN layer is 13.7% higher than that of conventional LEDs according to the experimental result. The calculated data further confirmed that the graded indium composition p-InGaN layer can effectively improve the light power of green LEDs. According to the simulation, the increase in light output power of green LEDs with a graded indium composition p-InGaN layer was mainly attributed to the enhancement of hole injection and the improvement of the radiative recombination rate.