Minkyung Jung

Circuit quantum electrodynamics with a spin qubit

Electron spins trapped in quantum dots have been proposed as basic building blocks of a future quantum processor. Although fast, 180-picosecond, two-quantum-bit (two-qubit) operations can be realized using nearest-neighbour exchange coupling, a scalable, spin-based quantum computing architecture will almost certainly require long-range qubit interactions. Circuit quantum electrodynamics (cQED) allows spatially separated superconducting qubits to interact via a superconducting microwave cavity that acts as a ‘quantum bus’, making possible two-qubit entanglement and the implementation of simple quantum algorithms. Here we combine the cQED architecture with spin qubits by coupling an indium arsenide nanowire double quantum dot to a superconducting cavity. The architecture allows us to achieve a charge–cavity coupling rate of about 30 megahertz, consistent with coupling rates obtained in gallium arsenide quantum dots. Furthermore, the strong spin–orbit interaction of indium arsenide allows us to drive spin rotations electrically with a local gate electrode, and the charge–cavity interaction provides a measurement of the resulting spin dynamics. Our results demonstrate how the cQED architecture can be used as a sensitive probe of single-spin physics and that a spin–cavity coupling rate of about one megahertz is feasible, presenting the possibility of long-range spin coupling via superconducting microwave cavities.

Three Synthetic Routes to Single- Crystalline PbS Nanowires with Controlled Growth Direction and Their Electrical Transport Properties

Single-crystalline rock-salt PbS nanowires (NWs) were synthesized using three different routes; the solvothermal, chemical vapor transport, and gas-phase substitution reaction of pregrown CdS NWs. They were uniformly grown with the [100] or [110], [112] direction in a controlled manner. In the solvothermal growth, the oriented attachment of the octylamine (OA) ligands enables the NWs to be produced with a controlled morphology and growth direction. As the concentration of OA increases, the growth direction evolves from the [100] to the higher surface-energy [110] and [112] directions under the more thermodynamically controlled growth conditions. In the synthesis involving chemical vapor transport and the substitution reaction, the use of a lower growth temperature causes the higher surface-energy growth direction to change from [100] to [110]. The high-resolution X-ray diffraction pattern and X-ray photoelectron spectroscopy results revealed that a thinner oxide-layer was produced on the surface of the PbS NWs by the substitution reaction. We fabricated field effect transistors using single PbS NW, which showed intrinsic p-type semiconductor characteristics for all three routes. For the PbS NW with a thinner oxide layer, the carrier mobility was measured to be as high as 10 cm(2) V(-1) s(-1).

Field Tuning the g Factor in InAs Nanowire Double Quantum Dots

We study the effects of magnetic and electric fields on the g factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g factors are extracted from the spin resonance condition as a function of the magnetic field direction, allowing determination of the full g tensor. Electric and magnetic field tuning can be used to maximize the g-factor difference and in some cases altogether quench the electric-dipole spin resonance response, allowing selective single spin control.

A mechanical memory with a dc modulation of nonlinear resonance

We present a mechanical memory device based on dynamic motion of a nanoelectromechanical (NEM) resonator. The NEM resonator exhibits clear nonlinear resonance characteristics which can be controlled by the dc bias voltage. For memory operations, the NEM resonator is driven to the nonlinear resonance region, and binary values are assigned to the two allowed states on the bifurcation branch. The transition between memory states is achieved by modulating the nonlinear resonance characteristics with dc bias voltage. Our device works at room temperature and modest vacuum conditions with a maximum operation frequency of about 5 kHz.

Transport properties of single-crystalline n-type semiconducting PbTe nanowires

Single-crystalline PbTe nanowires were synthesized using the chemical vapor transport method. They consisted of rock-salt structure PbTe nanocrystals uniformly grown in the [100] direction. We fabricated field-effect transistors using a single PbTe nanowire, providing evidence for its intrinsic n-type semiconductor characteristics. The values of the carrier mobility and concentration were estimated to be 0.83 cm(2) V(-1) s(-1) and 8.8 x 10(17) cm(-3), respectively. The Seebeck coefficients (-72 muV K(-1)) of individual nanowires were measured to show their n-type carrier-dominated thermoelectric transport properties.

Transformation of ZnTe nanowires to CdTe nanowires through the formation of ZnCdTe–CdTe core–shell structure by vapor transport

Single-crystalline ZnTe nanowires were transformed into single-crystalline CdTe nanowires by Cd vapor transport. The composition was controlled by adjusting the reaction time, and the formation of the ZnCdTe–CdTe core–shell nanocable structure as an intermediate was observed. Their morphology and crystal structure were retained during the transformation. The progressive composition change from ZnTe to CdTe tunes the emission wavelength from the green (528 nm) to red (855 nm) color regions . We fabricated field effect transistors using the ZnTe and CdTe nanowires, providing evidence that their p-type semiconductor characteristics remain the same after the transformation.

Spin-related current suppression in a semiconductor quantum dot spin-diode structure.

We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tunneling, we find anomalous suppression of the current for both forward and reverse bias. We discuss possible mechanisms of the anomalous current suppression in terms of spin blockade via the QD-FM interface at the ground state of a two-electron QD.

Radio frequency charge parity meter.

We demonstrate a total charge parity measurement by detecting the radio frequency signal that is reflected by a lumped-element resonator coupled to a single InAs nanowire double quantum dot. The high frequency response of the circuit is used to probe the effects of the Pauli exclusion principle at interdot charge transitions. Even parity charge transitions show a striking magnetic field dependence that is due to a singlet-triplet transition, while odd parity transitions are relatively insensitive to a magnetic field. The measured response agrees well with cavity input-output theory, allowing accurate measurements of the interdot tunnel coupling and the resonator-charge coupling rate g(c)/2π~17 MHz.

Radio frequency charge sensing in InAs nanowire double quantum dots

We demonstrate charge sensing of an InAs nanowire double quantum dot (DQD) coupled to a radio frequency (rf) circuit. We measure the rf signal reflected by the resonator using homodyne detection. Clear single dot and DQD behavior are observed in the resonator response. rf-reflectometry allows measurements of the DQD charge stability diagram in the few-electron regime even when the dc current through the device is too small to be measured. For a signal-to-noise ratio of one, we estimate a minimum charge detection time of 350 μs at interdot charge transitions and 9 μs for charge transitions with the leads.

Quantum Interference in Radial Heterostructure Nanowires

Core/shell heterostructure nanowires are one of the most interesting mesoscopic systems potentially suitable for the study of quantum interference phenomena. Here, we report on experimental observations of both the Aharonov-Bohm (h/e) and the Altshuler-Aronov-Spivak (h/2e) oscillations in radial core/shell (In2O3/InOx) heterostructure nanowires. For a long channel device with a length-to-width ratio of about 33, the magnetoresistance curves at low temperatures exhibited a crossover from low-field h/2e oscillation to high-field h/ e oscillation. The relationship between the oscillation period and the core width was investigated for freestanding or substrate-supported devices and indicated that the current flows dominantly through the core/shell interface.