Miroslav Zahoran

Hydrogen gas sensors based on nanocrystalline TiO2 thin films

Titanium dioxide thin films are extensively studied for applications in solid state gas sensor devices. Their gas sensing properties are strongly dependent on deposition technique, annealing temperature, film thickness and consequent properties like crystalline structure, grain size or amount of defects and impurities. In this work we report the gas sensing properties of TiO2 thin films prepared by reactive magnetron sputtering technique and subsequently annealed at temperatures 600°C and 900°C. The films were exposed to different concentrations of H2 gas up to 10 000 ppm. Their sensitivity to gas at various operating temperatures, ranging from 250°C to 450°C, was obtained by measuring their resistance.

In situ photoexcitation of silver-doped titania nanopowders for activity against bacteria and yeasts

Photocatalytic and in situ microbial activity of the amorphous and annealed states of Ag-doped and un-doped titania were examined. Studies on their structure, morphology, composition, and the photo-absorption characteristics of these materials were performed. These results were correlated with the photocatalytic and microbial activity against methicillin resistant Staphylococcus aureus K324 (MRSA), methicillin susceptible S. aureus ATCC 25923 (MSSA), Escherichia coli PA 170, and yeasts Candida albicans ATCC 90028. The annealed powders containing anatase form of titania exhibited relatively higher photocatalytic activity,corresponding to activity against MRSA,when exposed to UV-A radiation. In comparison, amorphous powders exhibited low photoactivity and showed poor antibacterial performance against MRSA under UV-A exposure. Doping of amorphous titania with Ag resulted in an anti-MRSA effect without exposure to UV radiation. In the Ag-doped crystalline anatase samples, the size of Ag primary nanocrystallites increased, which led to the decrease in the surface concentration of Ag and detriment anti-MRSA activity.

Studies of resistance switching effects in metal/YBa2Cu3O7−x interface junctions

Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7-x thin film - PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7-x films in the nano-scale vicinity of the junction interface under applied electrical fields.

Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites

Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented YBa2Cu3O6+c (YBCO) thin films with different crystallographic orientation have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii) both were designed and fabricated, and their current-voltage characteristics have been measured. The type (i) junctions exhibited conventional bipolar resistance switching behavior, whereas in other two types the low-resistance state was unsteady and their resistance quickly relaxed to the initial high-resistance state. Physical mechanism based on the oxygen diffusion scenario, explaining such behavior, is discussed.

Effect of Post-Deposition Annealing Treatment on the Structural, Optical and Gas Sensing Properties of TiO2 Thin Films

One of the potential applications of TiO2 is its use in gas sensor technology. The aim of this work was to study the gas sensing properties of TiO2 thin films in combination with the effect of post-deposition annealing treatment. Titanium dioxide thin films with thickness 100 nm were prepared by the reactive dc magnetron sputtering. The thin films were deposited on sapphire substrate from a titanium target in an oxygen atmosphere. The samples were then post-annealed in air in the temperature range 600 °C 1000 °C. Crystal structure, surface topography and absorption edge of the thin films have been studied by X-ray Diffraction technique, Atomic Force Microscopy and UV-VIS Spectroscopy. It was found that the phase gradually changed from anatase to rutile, the grain size and roughness tended to increase with increasing post-annealing temperature. The effect of these factors on gas sensing properties was discussed. For electrical measurements comb-like Pt electrodes were prepared by standard photolithography and the films were exposed to different concentrations of H2 gas up to 10000 ppm in synthetic air at various operating temperatures from 200 °C to 350 °C.

Direct creation of microdomains with positive and negative surface potential on hydroxyapatite coatings

A method for the direct patterning of electrostatic potential at the surface of hydroxyapatite is presented here. Microdomains of surface potential have been created on hydroxyapatite coatings by a 20 keV focused electron beam with minimal alterations of surface chemistry. The success of such approach has been confirmed by Kelvin probe force microscopy measurements, which show that this method is capable of creating micron sized positive and negative local electrostatic potential. The shape and potential difference of these domains were found to depend on the dose of total injected charge from the electron beam as well as the speed with which such charge is injected.

Directly created electrostatic micro-domains on hydroxyapatite: probing with a Kelvin Force probe and a protein

Micro-domains of modified surface potential (SP) were created on hydroxyapatite films by direct patterning by mid-energy focused electron beam, typically available as a microprobe of Scanning Electron Microscopes. The SP distribution of these patterns has been studied on sub-micrometer scale by the Kelvin Probe Force Microscopy method as well as lysozyme adsorption. Since the lysozyme is positively charged at physiological pH, it allows us to track positively and negatively charged areas of the SP patterns. Distribution of the adsorbed proteins over the domains was in good agreement with the observed SP patterns.

Temperature dependence of the resistance switching effect studied on the metal/YBa2Cu3O6+x planar junctions

The resistive switching (RS) effect observed in capacitorlike metal/insulator/metal junctions belongs to the most promising candidates for next generation of memory cell technology. It is based on a sudden change of the junction resistance caused by an electric field applied to the metal electrodes. The aim of this work was to study this effect on the structure metal/YBCO6/YBCO7, where YBCO7 is a metallic phase and YBCO6 is an insulator phase that arises spontaneously by outdiffusion of oxygen from a few nanometers wide YBCO surface layer. Oriented YBa2Cu3O7 thin films were prepared by the method of magnetron sputtering and consequently planar structures with metal-YBCO junction were made by the means of the optical lithography, ion etching, and vacuum evaporation. On these junctions, the authors have studied the temperature dependence of the RS effect with I-V and dI/dV-V transport measurements down to liquid He temperature. They have determined the temperature dependence of the RS effect threshold volta...

Properties of semiconductor surfaces covered with very thin insulating overlayers prepared by impacts of low-energy particles

This paper deals with the formation of very thin insulating layers on crystalline (GaAs) and amorphous semiconductors (a-Si:H and a-SiGe:H) prepared by the impacts of particles of a very low energy. Plasma, ion beams and plasma immersion ion implantation (PIII) as the sources of impacting particles were used and compared. The last technique was applied successfully for the first time in the case of amorphous silicon-based semiconductors. More diagnostics techniques were used for the investigation of the transformation of the semiconductor surface properties. In the a-Si:H based MOS structures prepared by PIII technology, only two groups of defects 0.82 and 1.25 eV (D(z) and D(e), respectively) were found. We suppose that the PIII technology using the implantation at the sample voltage of ca. -1000V causes the formation of a-Si:H layers with missing group of D(h) states. The only decisive parameter determining the formation of two groups of states is the negative potential of the sample during the implantation. In aSiGe:H based MOS structures, three distributions could be prepared by a bias annealing procedure: 0.47, 0.58 and 0.95 eV corresponding to p-type (D(h)) intrinsic (D(z)) and n-type (D(e)) distributions, respectively.

Underwater discharge plasma-induced coating of poly(acrylic acid) on polypropylene fiber

An underwater diaphragm discharge generated at atmospheric pressure by high voltage pulses was used for plasma polymerization of acrylic acid and simultaneously for the deposition of polymer coating on polypropylene multifilament fibers. The deposition process was monitored by Fourier transform infrared spectroscopy in combination with scanning electron microscopy. Possible schemes of polymerization are suggested also.