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Featured researches published by Mitsuaki Oya.


Japanese Journal of Applied Physics | 2013

Low Contact Resistance P-Type Electrode for Nonpolar m-Plane GaN

Mitsuaki Oya; Toshiya Yokogawa

A low contact resistance p-type electrode for nonpolar m-plane GaN was obtained using Mg as the electrode material. Ga atoms diffused toward the Mg electrode after heat treatment. Because the Ga vacancies act as acceptors and form levels in the Schottky barrier, we consider hopping conduction through the Ga vacancy levels to be the main mechanism for the formation of the p-type ohmic contact to m-plane GaN. The specific contact resistance was reduced to 8×10-4 Ω cm2 by optimizing the heat treatment temperature and the Mg thickness. A significant reduction in the operating voltage of m-plane GaN LEDs was achieved by using this electrode technology.


Archive | 2012

Nitride-based semiconductor device and method for fabricating the same

Toshiya Yokogawa; Mitsuaki Oya; Atsushi Yamada; Ryou Kato


Archive | 2009

Nitride semiconductor element and method for manufacturing the same

Toshiya Yokogawa; Mitsuaki Oya; Atsushi Yamada; Ryou Kato


Archive | 2010

Nitrogen-based semiconductor element and production method therefor

Mitsuaki Oya; Toshiya Yokogawa; Atsushi Yamada; Akihiro Isozaki


Archive | 2011

Nitride semiconductor element and manufacturing method therefor

Toshiya Yokogawa; Mitsuaki Oya; Atsushi Yamada; Ryou Kato


Archive | 2010

Nitride semiconductor element and method for manufacturing same

Toshiya Yokogawa; Mitsuaki Oya; Atsushi Yamada; Ryou Kato


Archive | 2010

Nitride semiconductor element and method for producing the same

Mitsuaki Oya; Toshiya Yokogawa; Atsushi Yamada; Akihiro Isozaki


Archive | 2009

Nitride semiconductor light-emitting element, illuminating device, liquid crystal display device, method for producing nitride semiconductor light-emitting element and method for manufacturing illuminating device

Toshiya Yokogawa; Akira Inoue; Masaki Fujikane; Mitsuaki Oya; Atsushi Yamada; Tadashi Yano


Electronics and Communications in Japan | 2015

A High Power InGaN‐LED on an m‐Plane GaN Substrate

Toshiya Yokogawa; Mitsuaki Oya; Masaki Fujikane


Archive | 2012

NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHTING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD FOR PRODUCING LIGHTING DEVICE

Toshiya Yokogawa; Akira Inoue; Masaki Fujikane; Mitsuaki Oya; Atsushi Yamada; Tadashi Yano

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