Mitsuhisa Narukawa

Fabrication and Optical Characterization of Facet-Controlled ELO (FACELO) GaN by LP-MOVPE

The fabrication and characterization of GaN grown by metalorganic vapor phase epitaxy (MOVPE) using Facet Controlled Epitaxial Lateral Overgrowth (FACELO) technique were carried out. The density and distribution of threading dislocations (TDs) in the GaN epitaxial layer strongly depended on the ELO mask and window widths, and were related to facet structures during the ELO process. It was found that tilt and twist of c-axis in the FACELO GaN was very small. The temperature dependence of PL spectra of the FACELO GaN exhibits that the quality of the crystal is fairly good.

Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen (111)

We investigated the growth of GaN on 3C-SiC fabricated by the deposition and carbonization of a separation by implanted oxygen (SIMOX) surface. The dependences of AlN buffer thickness on the crystalline quality and surface morphology of the GaN grown on 3C-SiC/SIMOX (111) by low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) were examined. We studied the stress of GaN by the in situ monitoring of the reflectance and substrate curvature. High-quality GaN with a smooth surface was obtained using an AlN buffer of 10 nm thickness. Moreover, the fabrication of crack-free GaN was achieved using an AlN/GaN superlattice (SL) structure on an AlGaN/AlN buffer.